FZT755TC Equivalent & Substitute Parts

Part Overview

The FZT755TC is a PNP bipolar junction transistor manufactured by Diodes Incorporated, rated for 150 V collector-emitter breakdown voltage and 1 A maximum collector current in a surface mount SOT-223-3 package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 2 W maximum power dissipation with a 30 MHz transition frequency and operates across the temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	150	V
Current - Collector (Ic) (Max)	1	A
Power - Max	2	W
Frequency - Transition	30	MHz
Vce Saturation (Max) @ Ib, Ic	500 mV @ 200 mA, 1 A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500 mA, 5 V	—
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
Supplier Device Package	SOT-223-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FZT755TC is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): ≥ 150 V
Current - Collector (Ic) (Max): ≥ 1 A
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA (SOT-223 family)
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Compatibility Parameters:

Operating Temperature Range: Must encompass or exceed -55°C to 150°C
Power - Max: ≥ 2 W (preferred) or ≥ 1.4 W (acceptable for reduced power applications)
Vce Saturation: Lower values indicate improved performance
DC Current Gain (hFE): Higher values indicate improved performance

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications) and functional substitutes (meeting or exceeding all critical parameters with potential trade-offs in secondary characteristics).

Parameter Comparison

Parameter	FZT755TC	FZT755TA	PBHV9115Z,115	PBHV9215Z,115	PZT2907AT1G	PZT2907AT3G
Manufacturer	Diodes Inc.	Diodes Inc.	Nexperia USA Inc.	Nexperia USA Inc.	onsemi	onsemi
Product Status	Obsolete	Active	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	150 V	150 V	150 V	150 V	60 V	60 V
Current - Collector (Ic) (Max)	1 A	1 A	1 A	2 A	600 mA	600 mA
Power - Max	2 W	2 W	1.4 W	1.45 W	1.5 W	1.5 W
Frequency - Transition	30 MHz	30 MHz	115 MHz	35 MHz	200 MHz	200 MHz
Vce Saturation (Max) @ Ib, Ic	500 mV @ 200 mA, 1 A	500 mV @ 200 mA, 1 A	300 mV @ 100 mA, 500 mA	350 mV @ 400 mA, 2 A	1.6 V @ 50 mA, 500 mA	1.6 V @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500 mA, 5 V	50 @ 500 mA, 5 V	100 @ 100 mA, 10 V	80 @ 1 A, 10 V	100 @ 150 mA, 10 V	100 @ 150 mA, 10 V
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	to 150 °C	to 150 °C	-65 to 150 °C	-65 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223	SOT-223	SOT-223 (TO-261)	SOT-223 (TO-261)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Packaging Type	—	Cut Tape (CT)	Tape & Reel (TR)	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®	Tape & Reel (TR)
Automotive Grade / Qualification	—	—	AEC-Q100	AEC-Q100	—	—

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

FZT755TA is the direct parametric equivalent to FZT755TC. Both devices are manufactured by Diodes Incorporated and share identical electrical specifications: 150 V collector-emitter breakdown voltage, 1 A maximum collector current, 2 W power dissipation, and 30 MHz transition frequency. The FZT755TA is currently in active production status, whereas the FZT755TC is obsolete. The FZT755TA is available in Cut Tape packaging with significantly higher inventory levels (35,100 units), making it the preferred replacement for new designs and ongoing procurement.

Functional Substitutes (Voltage and Current Compatible):

PBHV9115Z,115 and PBHV9215Z,115 (Nexperia USA Inc.) maintain the 150 V collector-emitter breakdown voltage specification and meet or exceed the 1 A current requirement. Both devices are AEC-Q100 qualified for automotive applications and carry active product status. PBHV9115Z,115 delivers 1 A at 115 MHz transition frequency with 1.4 W power dissipation. PBHV9215Z,115 provides enhanced current capability at 2 A with 35 MHz transition frequency and 1.45 W power dissipation. These parts are supplied in Tape & Reel packaging and are REACH unaffected.

Limited Substitutes (Reduced Voltage Rating):

PZT2907AT1G and PZT2907AT3G (onsemi) are functionally limited substitutes due to reduced collector-emitter breakdown voltage (60 V versus 150 V) and reduced maximum collector current (600 mA versus 1 A). These parts are suitable only for applications where the 150 V voltage rating is not required. Both devices feature superior transition frequency (200 MHz) and higher DC current gain (100 @ 150 mA, 10 V). Operating temperature range extends to -65°C. These parts are available in Cut Tape and Tape & Reel packaging options with substantial inventory availability.

Frequently Asked Questions (FAQ)

Q: Can FZT755TA be used as a direct replacement for FZT755TC?

A: Yes. FZT755TA is a parametric equivalent with identical electrical specifications and mechanical package compatibility. Both are PNP transistors rated for 150 V, 1 A, 2 W in SOT-223-3 surface mount packages. FZT755TA is currently in active production, whereas FZT755TC is obsolete.

Q: What are the key differences between the Nexperia PBHV91xx and PBHV92xx series substitutes?

A: PBHV9115Z,115 is rated for 1 A maximum collector current with 115 MHz transition frequency. PBHV9215Z,115 is rated for 2 A maximum collector current with 35 MHz transition frequency. Both maintain the 150 V collector-emitter breakdown voltage. Selection depends on application current requirements and frequency performance needs.

Q: Are the onsemi PZT2907 parts suitable replacements for the FZT755TC?

A: PZT2907AT1G and PZT2907AT3G are not suitable direct replacements due to reduced collector-emitter breakdown voltage (60 V versus 150 V) and reduced maximum collector current (600 mA versus 1 A). These parts are functional substitutes only for applications where the lower voltage and current ratings are acceptable.

Q: What packaging options are available for substitute parts?

A: FZT755TA is supplied in Cut Tape (CT) packaging. PBHV9115Z,115 and PBHV9215Z,115 are supplied in Tape & Reel (TR) packaging. PZT2907AT1G is available in Cut Tape (CT) and Digi-Reel® packaging. PZT2907AT3G is supplied in Tape & Reel (TR) packaging. All parts use SOT-223 surface mount packages compatible with TO-261-4 and TO-261AA footprints.

Q: Do all substitute parts meet RoHS and environmental compliance requirements?

A: Yes. All listed substitute parts (FZT755TA, PBHV9115Z,115, PBHV9215Z,115, PZT2907AT1G, and PZT2907AT3G) are ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). PBHV9115Z,115 and PBHV9215Z,115 are additionally AEC-Q100 qualified for automotive applications.

Q: What is the inventory status of available substitutes?

A: FZT755TA has 35,100 units in stock. PBHV9115Z,115 has 21,021 units in stock. PBHV9215Z,115 has 5,717 units in stock. PZT2907AT1G has 125,200 units in stock. PZT2907AT3G has 24,130 units in stock. Inventory levels support both prototype and production volume requirements.

Q: Can transition frequency differences affect circuit performance?

A: Transition frequency differences between parts reflect their high-frequency performance characteristics. FZT755TC and FZT755TA operate at 30 MHz. PBHV9115Z,115 operates at 115 MHz. PBHV9215Z,115 operates at 35 MHz. PZT2907 series operates at 200 MHz. Higher transition frequencies provide improved performance in high-speed switching applications but are not required for low-frequency applications.

Q: What is the significance of Vce saturation voltage differences?

A: Vce saturation voltage indicates the voltage drop across the transistor in saturation mode. Lower saturation voltages reduce power dissipation and heat generation. FZT755TC and FZT755TA specify 500 mV saturation. PBHV9115Z,115 specifies 300 mV saturation. PBHV9215Z,115 specifies 350 mV saturation. PZT2907 series specifies 1.6 V saturation. Lower saturation voltages are advantageous in power-sensitive applications.

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