FZT751TC Equivalent & Substitute Parts

Part Overview

The FZT751TC is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-223-3 package. This device operates at 60 V collector-emitter breakdown voltage with a maximum collector current of 3 A and a maximum power dissipation of 2 W. The transistor is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required, or when design specifications allow for components with enhanced electrical characteristics or different manufacturer qualifications.

Substiute Parts

FZT751TC
Diodes IncorporatedIn Stock: 8942FZT751TC Datasheet
FZT751TC
Current Part
FZT751QTA
Diodes IncorporatedIn Stock: 10127FZT751QTA Datasheet
FZT751QTA
Direct
FZT751QTC
Diodes IncorporatedIn Stock: 19165FZT751QTC Datasheet
FZT751QTC
Parametric Equivalent
FZT751TA
Diodes IncorporatedIn Stock: 43868FZT751TA Datasheet
FZT751TA
Parametric Equivalent
NZT660
Fairchild SemiconductorIn Stock: 69153NZT660 Datasheet
NZT660
Direct
BCP52,135
Nexperia USA Inc.In Stock: 12349BCP52,135 Datasheet
BCP52,135
MFR Recommended
BCP52-10,135
Nexperia USA Inc.In Stock: 5749BCP52-10,135 Datasheet
BCP52-10,135
MFR Recommended
BCP52-16,115
Nexperia USA Inc.In Stock: 2192BCP52-16,115 Datasheet
BCP52-16,115
MFR Recommended
BCP5216H6327XTSA1
Infineon TechnologiesIn Stock: 1135BCP5216H6327XTSA1 Datasheet
BCP5216H6327XTSA1
MFR Recommended
BSP31,115
NXP USA Inc.In Stock: 4954BSP31,115 Datasheet
BSP31,115
MFR Recommended
NSS60600MZ4T1G
onsemiIn Stock: 25222NSS60600MZ4T1G Datasheet
NSS60600MZ4T1G
MFR Recommended
NZT660A
onsemiIn Stock: 20192NZT660A Datasheet
NZT660A
MFR Recommended
NZT751
Fairchild SemiconductorIn Stock: 6548NZT751 Datasheet
NZT751
MFR Recommended
PBSS5350X,146
Nexperia USA Inc.In Stock: 1803PBSS5350X,146 Datasheet
PBSS5350X,146
MFR Recommended
PBSS5360XF
Nexperia USA Inc.In Stock: 3251PBSS5360XF Datasheet
PBSS5360XF
MFR Recommended
PZT2907A,115
Nexperia USA Inc.In Stock: 6534PZT2907A,115 Datasheet
PZT2907A,115
MFR Recommended
PZT2907A,135
Nexperia USA Inc.In Stock: 8298PZT2907A,135 Datasheet
PZT2907A,135
MFR Recommended
PZT2907AT1G
onsemiIn Stock: 125246PZT2907AT1G Datasheet
PZT2907AT1G
MFR Recommended
PZT2907AT3G
onsemiIn Stock: 24200PZT2907AT3G Datasheet
PZT2907AT3G
MFR Recommended
STN951
STMicroelectronicsIn Stock: 10255STN951 Datasheet
STN951
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 60 V
Current - Collector (Ic) (Max) 3 A
Power - Max 2 W
Frequency - Transition 140 MHz
Vce Saturation (Max) @ Ib, Ic 600 mV @ 300 mA, 3 A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500 mA, 2 V
Operating Temperature Range -55 to 150 °C
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FZT751TC is determined by strict adherence to the following electrical and mechanical parameters:

Critical Parameters for Direct Substitution:

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 60 V minimum
  • Current - Collector (Ic) (Max): 3 A minimum
  • Power - Max: 2 W minimum
  • Operating Temperature Range: -55°C to 150°C minimum
  • Package / Case: TO-261-4 or TO-261AA
  • Mounting Type: Surface Mount

Acceptable Variation Parameters:

  • Frequency - Transition: 75 MHz or higher
  • Vce Saturation: 550 mV to 600 mV
  • DC Current Gain (hFE): 100 or higher at specified conditions
  • Supplier Device Package: SOT-223-3 or SOT-223-4

Substitute parts are grouped into three categories: Direct Manufacturer Equivalents (same manufacturer, identical electrical specifications), Parametric Equivalents (same manufacturer, enhanced specifications), and Cross-Manufacturer Alternatives (different manufacturers, comparable electrical characteristics).

Parameter Comparison

Part Number Manufacturer Ic (Max) A Voltage V Power W Frequency MHz Vce Sat mV hFE (Min) Package Product Status
FZT751TC Diodes Incorporated 3 60 2 140 600 100 SOT-223-3 Active
FZT751QTA Diodes Incorporated 3 60 3 140 600 100 SOT-223-3 Active
FZT751QTC Diodes Incorporated 3 60 2 140 600 100 SOT-223-3 Active
FZT751TA Diodes Incorporated 3 60 2 140 600 100 SOT-223-3 Active
NZT660 Fairchild Semiconductor 3 60 2 75 550 100 SOT-223-4 Active
BCP52,135 Nexperia USA Inc. 1 60 1 145 500 63 SOT-223 Active
BCP52-10,135 Nexperia USA Inc. 1 60 1.3 145 500 63 SOT-223 Active
BCP52-16,115 Nexperia USA Inc. 1 60 1 145 500 100 SOT-223 Active
BCP5216H6327XTSA1 Infineon Technologies 1 60 2 125 500 100 SOT-223-4 Last Time Buy
BSP31,115 NXP USA Inc. 1 60 1.3 100 500 100 SOT-223 Active
NSS60600MZ4T1G onsemi 6 60 0.8 100 350 120 SOT-223 Active

Engineering Selection Recommendations

Direct Manufacturer Equivalents (Diodes Incorporated):

FZT751QTA, FZT751QTC, and FZT751TA are direct equivalents manufactured by Diodes Incorporated. These parts maintain identical electrical specifications to the FZT751TC with respect to collector current (3 A), voltage rating (60 V), and operating temperature range (-55°C to 150°C). FZT751QTA provides enhanced power dissipation capability at 3 W compared to the 2 W rating of the primary part. FZT751TA is available in Cut Tape and Digi-Reel packaging format, offering alternative supply chain options. All three parts are Active status and RoHS3 compliant.

Parametric Equivalent with Automotive Qualification:

FZT751QTC is qualified to AEC-Q101 automotive standards and carries Active product status. This part is suitable for applications requiring automotive-grade components while maintaining identical electrical performance to the FZT751TC.

Cross-Manufacturer Alternatives:

NZT660 (Fairchild Semiconductor) meets the 3 A collector current and 60 V voltage requirements with identical 2 W power rating. The transition frequency is reduced to 75 MHz and Vce saturation is improved at 550 mV. This part is supplied in bulk packaging and SOT-223-4 package format.

Current-Limited Alternatives:

BCP52 series parts (Nexperia USA Inc., Infineon Technologies, NXP USA Inc.) and BSP31,115 (NXP USA Inc.) are rated for 1 A maximum collector current, which is below the 3 A requirement of the FZT751TC. These parts are suitable only for applications where the actual circuit current demand does not exceed 1 A. BCP52,135, BCP52-10,135, and BCP52-16,115 are all Active status with AEC-Q100 automotive qualification. BCP5216H6327XTSA1 (Infineon Technologies) carries Last Time Buy status and should not be selected for new designs.

Higher Current Alternative:

NSS60600MZ4T1G (onsemi) provides 6 A maximum collector current, exceeding the 3 A specification of the FZT751TC. This part is suitable for applications requiring higher current capacity while maintaining the 60 V voltage rating and surface mount SOT-223 package compatibility. Power dissipation is rated at 800 mW, which is below the 2 W primary specification.

Frequently Asked Questions (FAQ)

Q: Can FZT751QTA be used as a direct replacement for FZT751TC?

A: Yes. FZT751QTA is manufactured by Diodes Incorporated and maintains identical electrical specifications for collector current (3 A), voltage rating (60 V), and operating temperature range (-55°C to 150°C). The primary difference is enhanced power dissipation at 3 W versus 2 W. Both parts are RoHS3 compliant and Active status.

Q: What is the difference between FZT751TA and FZT751TC?

A: FZT751TA and FZT751TC are electrically identical. The difference is packaging format: FZT751TA is supplied in Cut Tape and Digi-Reel format, while FZT751TC is supplied in Tape & Reel format. Both maintain 3 A collector current, 60 V voltage rating, 2 W power dissipation, and 140 MHz transition frequency.

Q: Can BCP52,135 replace FZT751TC in all applications?

A: No. BCP52,135 is rated for maximum 1 A collector current, which is one-third the 3 A rating of FZT751TC. This part is suitable only for circuits where actual collector current does not exceed 1 A. The voltage rating (60 V) and operating temperature range (-55°C to 150°C) are compatible.

Q: Is NZT660 a suitable substitute for FZT751TC?

A: NZT660 meets the 3 A collector current and 60 V voltage requirements with identical 2 W power dissipation. The transition frequency is lower at 75 MHz compared to 140 MHz, and Vce saturation is improved at 550 mV. NZT660 is suitable for applications where the lower frequency specification does not impact circuit performance.

Q: What does "Last Time Buy" status mean for BCP5216H6327XTSA1?

A: Last Time Buy status indicates that the manufacturer has announced end-of-life for this part. New orders may be accepted for a limited time, but the part will not be manufactured indefinitely. This part should not be selected for new product designs. Active status alternatives such as BCP52-16,115 should be used instead.

Q: Can NSS60600MZ4T1G be used in place of FZT751TC?

A: NSS60600MZ4T1G maintains the 60 V voltage rating and surface mount SOT-223 package compatibility. However, the maximum collector current is 6 A, which exceeds the 3 A specification of FZT751TC. Power dissipation is rated at 800 mW, below the 2 W primary specification. This part is suitable only for applications where the circuit design accommodates the higher current capability and lower power rating.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the compliance profile of FZT751TC.

Q: What is the significance of AEC-Q101 qualification on FZT751QTC?

A: AEC-Q101 qualification indicates that FZT751QTC meets automotive industry reliability and quality standards. This qualification is relevant only for applications requiring automotive-grade components. For non-automotive applications, FZT751QTC and FZT751TC are functionally equivalent.

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