FZT658TC Equivalent & Substitute Parts

Part Overview

The FZT658TC is an NPN bipolar junction transistor manufactured by Diodes Incorporated, rated for 400 V collector-emitter breakdown voltage and 500 mA maximum collector current. The device is packaged in SOT-223-3 surface mount configuration and is designed for general-purpose switching and amplification applications. The FZT658TC is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

FZT658TC

Diodes IncorporatedIn Stock: 758FZT658TC Datasheet

Current PartRFQ

FZT658TA

Diodes IncorporatedIn Stock: 20045FZT658TA Datasheet

Parametric EquivalentRFQ

PBHV8140Z,115

Nexperia USA Inc.In Stock: 25981PBHV8140Z,115 Datasheet

MFR RecommendedRFQ

PBHV8540Z,115

Nexperia USA Inc.In Stock: 12589PBHV8540Z,115 Datasheet

MFR RecommendedRFQ

PZTA44,115

Nexperia USA Inc.In Stock: 2790PZTA44,115 Datasheet

MFR RecommendedRFQ

STN83003

STMicroelectronicsIn Stock: 3448STN83003 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FZT658TC are selected based on the following critical parameters that determine functional compatibility:

Primary Matching Criteria:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 400 V minimum
• Package / Case: SOT-223 or equivalent surface mount configuration
• Mounting Type: Surface Mount
• RoHS Status: ROHS3 Compliant

Secondary Consideration Parameters:

• Current - Collector (Ic) (Max): 500 mA or greater
• Power - Max: 2 W or greater
• Operating Temperature Range: -55°C to 150°C or compatible subset

Substitutes are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (different electrical specifications within acceptable operating margins for the application).

Parameter Comparison

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

FZT658TA is the primary direct substitute for FZT658TC. Both parts share identical electrical specifications including 400 V breakdown voltage, 500 mA maximum collector current, 2 W power rating, and 50 MHz transition frequency. FZT658TA is manufactured by Diodes Incorporated and maintains active product status, ensuring long-term availability. The only difference is packaging format: FZT658TA is supplied in Cut Tape and Digi-Reel format versus the original Tape & Reel packaging. This part is suitable for direct schematic and layout substitution without design modification.

Manufacturer-Recommended Alternatives:

PBHV8140Z,115 (Nexperia USA Inc.) provides higher current capability at 1 A maximum collector current while maintaining 400 V breakdown voltage. This part is automotive-grade (AEC-Q100 qualified) and active product status. Power dissipation is reduced to 1.45 W. Transition frequency is 25 MHz, lower than the original 50 MHz specification. This substitute is appropriate for applications where higher current capacity is beneficial and lower frequency response is acceptable.

PBHV8540Z,115 (Nexperia USA Inc.) matches the 500 mA collector current specification and 400 V breakdown voltage of the original part. This part is automotive-grade (AEC-Q100 qualified) and active product status. Power rating is 1.4 W and transition frequency is 30 MHz. This substitute provides automotive-grade reliability for applications requiring such qualification.

PZTA44,115 (Nexperia USA Inc.) is rated for 300 mA maximum collector current, which is lower than the original 500 mA specification. This part is automotive-grade (AEC-Q101 qualified) and active product status. Transition frequency is 20 MHz. This substitute is suitable only for applications where collector current does not exceed 300 mA.

STN83003 (STMicroelectronics) provides the highest current capability at 1.5 A maximum collector current while maintaining 400 V breakdown voltage. This part is active product status. Power rating is 1.6 W. Transition frequency is not specified. This substitute is appropriate for high-current applications where the original 500 mA specification is insufficient.

Frequently Asked Questions (FAQ)

Q: Can FZT658TA be used as a direct replacement for FZT658TC?

A: Yes. FZT658TA is a parametric equivalent with identical electrical specifications. Both parts are NPN transistors rated for 400 V breakdown voltage, 500 mA maximum collector current, 2 W power dissipation, and 50 MHz transition frequency. The parts differ only in packaging format (Cut Tape versus Tape & Reel). FZT658TA is active product status, making it the recommended choice for new designs and production.

Q: What is the difference between the Nexperia PBHV8140Z,115 and PBHV8540Z,115 substitutes?

A: PBHV8140Z,115 is rated for 1 A maximum collector current with 1.45 W power dissipation and 25 MHz transition frequency. PBHV8540Z,115 is rated for 500 mA maximum collector current with 1.4 W power dissipation and 30 MHz transition frequency. Both maintain 400 V breakdown voltage and are automotive-grade (AEC-Q100). PBHV8140Z,115 provides higher current capacity, while PBHV8540Z,115 more closely matches the original current specification.

Q: Are all substitute parts compatible with the original SOT-223 package footprint?

A: Yes. All substitute parts listed are packaged in SOT-223 surface mount configuration with TO-261-4 or TO-261AA case designation. The physical footprint and pin configuration are compatible with the original FZT658TC SOT-223-3 package. PCB layout modifications are not required.

Q: Which substitute part should be selected for automotive applications?

A: PBHV8140Z,115, PBHV8540Z,115, and PZTA44,115 are all automotive-grade parts with AEC-Q100 or AEC-Q101 qualification. PBHV8540Z,115 is the closest match to the original FZT658TC specifications while providing automotive qualification. PBHV8140Z,115 is suitable if higher current capacity is required. PZTA44,115 is suitable only if collector current does not exceed 300 mA.

Q: What is the impact of lower transition frequency in substitute parts?

A: The original FZT658TC has 50 MHz transition frequency. Substitute parts have lower transition frequencies: PBHV8140Z,115 (25 MHz), PBHV8540Z,115 (30 MHz), and PZTA44,115 (20 MHz). Lower transition frequency indicates reduced high-frequency switching capability. Substitutes are suitable for applications operating below their specified transition frequency. Applications requiring 50 MHz or higher switching performance should use FZT658TA.

Q: Can PZTA44,115 be used in all applications where FZT658TC is specified?

A: No. PZTA44,115 is rated for 300 mA maximum collector current, which is lower than the original 500 mA specification. This substitute is suitable only for applications where collector current does not exceed 300 mA. Applications requiring 500 mA or higher collector current must use FZT658TA, PBHV8540Z,115, or higher-current alternatives.

Q: What is the advantage of STN83003 over other substitutes?

A: STN83003 provides the highest current capability at 1.5 A maximum collector current while maintaining 400 V breakdown voltage. This part is suitable for high-current applications where the original 500 mA specification is insufficient. STN83003 is active product status and ROHS3 compliant. Transition frequency is not specified, which may limit use in high-frequency switching applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (FZT658TA, PBHV8140Z,115, PBHV8540Z,115, PZTA44,115, and STN83003) are ROHS3 compliant, matching the original FZT658TC compliance status.