FW813-TL-H Equivalent & Substitute Parts

Part Overview

The FW813-TL-H is a dual N-channel MOSFET array manufactured by onsemi, rated for 60V drain-to-source voltage and 5A continuous drain current in an 8-SOP surface mount package. This component is classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. The part operates at a maximum junction temperature of 150°C with a maximum power dissipation of 2.5W and features logic level gate operation suitable for low-voltage control applications.

Substiute Parts

FW813-TL-H
onsemiIn Stock: 1206FW813-TL-H Datasheet
FW813-TL-H
Current Part
SP8K33FRATB
Rohm SemiconductorIn Stock: 3515SP8K33FRATB Datasheet
SP8K33FRATB
Similar
STS5DNF60L
STMicroelectronicsIn Stock: 1000335STS5DNF60L Datasheet
STS5DNF60L
Similar

Key Parameters

Parameter Value Unit
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 5 A
Rds On (Max) @ Id, Vgs 49 mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 725 pF @ 20V
Power - Max 2.5 W
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
FET Feature Logic Level Gate
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FW813-TL-H is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Configuration: 2 N-Channel (Dual)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Mounting Type: Surface Mount
  • Package Category: 8-SOP / 8-SOIC

Allowable Variation Parameters:

  • Rds On (Max): Substitute values must not exceed the original specification to ensure equivalent or superior performance
  • Gate Charge (Qg): Variation permitted within switching performance tolerance
  • Input Capacitance (Ciss): Variation permitted within circuit design tolerance
  • Power - Max: Substitute values must meet or exceed the original specification
  • Operating Temperature: Substitute values must support the original operating range

The identified substitute parts SP8K33FRATB and STS5DNF60L meet all mandatory matching parameters and fall within allowable variation ranges for secondary electrical characteristics.

Parameter Comparison

Parameter FW813-TL-H (onsemi) SP8K33FRATB (Rohm) STS5DNF60L (STMicroelectronics)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 5A 5A (Ta) 5A
Rds On (Max) @ Id, Vgs 49 mOhm @ 5A, 10V 48 mOhm @ 5A, 10V 45 mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10V 12 nC @ 5V 15 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 725 pF @ 20V 620 pF @ 10V 1030 pF @ 25V
Power - Max 2.5W 2W 2W
Operating Temperature (TJ) 150°C 150°C -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate Logic Level Gate
Product Status Obsolete Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

SP8K33FRATB (Rohm Semiconductor): This substitute is an active product with automotive-grade qualification (AEC-Q101) and ROHS3 compliance. The part maintains electrical equivalence with marginally lower on-resistance (48 mOhm vs. 49 mOhm) and reduced gate charge (12 nC vs. 15 nC), resulting in improved switching efficiency. Package dimensions are slightly smaller (3.90mm vs. 4.40mm width). The SP8K33FRATB is suitable for applications where automotive qualification and active product status are required.

STS5DNF60L (STMicroelectronics): This substitute is an active product with automotive-grade qualification (AEC-Q101), ROHS3 compliance, and extended operating temperature range (-55°C to 150°C). The part features superior on-resistance performance (45 mOhm @ 2A, 10V) and logic level gate operation matching the original specification. Gate charge remains equivalent (15 nC @ 4.5V). Input capacitance is higher (1030 pF vs. 725 pF), which may affect switching speed in certain circuit topologies. The STS5DNF60L is suitable for applications requiring extended temperature range and active product status with established supply chain availability.

Both substitutes provide active product status, eliminating obsolescence risk associated with the FW813-TL-H. Selection between SP8K33FRATB and STS5DNF60L depends on specific application requirements regarding temperature range, switching performance, and package footprint constraints.

Frequently Asked Questions (FAQ)

Q: Can the FW813-TL-H be directly replaced with SP8K33FRATB or STS5DNF60L without circuit modification?

A: Both substitute parts maintain electrical equivalence across all critical parameters (Vdss, Id, configuration, and mounting type). Direct replacement is permissible from an electrical standpoint. However, package dimensions differ slightly (original: 4.40mm width; substitutes: 3.90mm width), requiring verification of PCB layout compatibility. Gate charge and input capacitance variations may affect switching transient behavior in high-frequency applications; circuit simulation is recommended for designs operating above 100 kHz.

Q: What is the primary reason the FW813-TL-H is classified as obsolete?

A: The FW813-TL-H is designated obsolete by the manufacturer onsemi. Both identified substitutes (SP8K33FRATB and STS5DNF60L) are active products with established supply chains, making them suitable for new designs and production continuity.

Q: Are there package compatibility concerns between the FW813-TL-H and its substitutes?

A: The FW813-TL-H uses an 8-SOIC package with 4.40mm width, while both substitutes use 8-SOIC packages with 3.90mm width. Pin pitch and lead configuration remain compatible within the 8-SOIC standard. PCB footprint verification is necessary to confirm that the narrower package width does not create mechanical interference or solder joint reliability issues in existing designs.

Q: Which substitute offers better performance characteristics?

A: STS5DNF60L provides superior on-resistance (45 mOhm @ 2A, 10V) and extended operating temperature range (-55°C to 150°C). SP8K33FRATB offers lower gate charge (12 nC @ 5V) and marginally lower on-resistance (48 mOhm @ 5A, 10V). Selection depends on application-specific requirements for thermal performance, switching speed, and temperature operating envelope.

Q: Do both substitutes meet automotive qualification standards?

A: Yes. Both SP8K33FRATB and STS5DNF60L carry AEC-Q101 automotive qualification and ROHS3 compliance. The original FW813-TL-H does not specify automotive qualification. Applications requiring automotive-grade components benefit from substitution with either part.

Q: What is the impact of higher input capacitance in the STS5DNF60L?

A: The STS5DNF60L exhibits higher input capacitance (1030 pF @ 25V) compared to the FW813-TL-H (725 pF @ 20V). This increases gate drive current requirements and may extend switching transition times. For applications with limited gate drive capability or stringent switching speed requirements, SP8K33FRATB with lower input capacitance (620 pF @ 10V) may be preferable.

Q: Are moisture sensitivity levels equivalent across all three parts?

A: Yes. The FW813-TL-H, SP8K33FRATB, and STS5DNF60L all carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity constraints for storage, handling, or reflow processing.

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