FT93C46A-USR-T EEPROM Memory IC Equivalent & Substitute Parts

Part Overview

The FT93C46A-USR-T is a 1Kbit non-volatile EEPROM memory IC manufactured by Fremont Micro Devices Ltd. It features a 3-wire serial interface operating at 1 MHz with 128 x 8 or 64 x 16 memory organization. The device is packaged in an 8-SOP surface mount package and operates across the industrial temperature range of -40°C to 85°C. This part is currently in active production status with 10,200 units in stock.

Substitute parts are identified when equivalent memory capacity, interface type, and package form factor are maintained while meeting or exceeding the electrical performance specifications of the original device.

Substiute Parts

FT93C46A-USR-T

Fremont Micro Devices LtdIn Stock: 10306FT93C46A-USR-T Datasheet

Current PartRFQ

AT93C46DN-SH-T

Microchip TechnologyIn Stock: 88429AT93C46DN-SH-T Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the FT93C46A-USR-T is determined by the following critical parameters:

• Memory Capacity: 1Kbit (non-negotiable)
• Memory Type: Non-volatile EEPROM (non-negotiable)
• Interface Protocol: 3-Wire Serial (non-negotiable)
• Memory Organization: 128 x 8 or 64 x 16 (non-negotiable)
• Package Form Factor: 8-SOIC with 0.154" width, 3.90mm (non-negotiable)
• Mounting Technology: Surface Mount (non-negotiable)
• Supply Voltage Range: Must encompass or exceed 4.5V ~ 5.5V
• Operating Temperature Range: Must encompass or equal -40°C ~ 85°C
• Regulatory Compliance: ROHS3 Compliant

The AT93C46DN-SH-T qualifies as a substitute because it maintains identical memory capacity, organization, interface type, and package specifications while providing enhanced electrical performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

The AT93C46DN-SH-T manufactured by Microchip Technology is a qualified substitute for the FT93C46A-USR-T. Both devices maintain active product status and ROHS3 compliance. The substitute part provides performance enhancements including doubled clock frequency (2 MHz versus 1 MHz), reduced write cycle time (5ms versus 10ms), and extended supply voltage range (1.8V ~ 5.5V versus 4.5V ~ 5.5V). These enhancements ensure backward compatibility in applications designed for the original part while enabling operation in systems with lower supply voltage requirements. The AT93C46DN-SH-T is verified as programmable through DiGi-Electronics, whereas the FT93C46A-USR-T programmability status is not verified.

Frequently Asked Questions (FAQ)

Q: Can the AT93C46DN-SH-T replace the FT93C46A-USR-T in existing designs?

A: Yes. The substitute part maintains identical memory capacity, organization, interface protocol, and package specifications. The enhanced performance characteristics (higher clock frequency, faster write cycle, lower minimum supply voltage) ensure compatibility with designs specified for the original part.

Q: Are there package differences between these parts?

A: No. Both devices use the 8-SOIC package with 0.154" width and 3.90mm height. Pin assignments and footprints are identical, enabling direct PCB substitution without layout modifications.

Q: What is the significance of the extended supply voltage range in the substitute part?

A: The AT93C46DN-SH-T operates from 1.8V minimum supply voltage compared to 4.5V for the FT93C46A-USR-T. This extended range allows the substitute to function in low-voltage applications while remaining fully compatible with standard 5V systems.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the FT93C46A-USR-T and AT93C46DN-SH-T are ROHS3 compliant and REACH unaffected, meeting equivalent regulatory standards for industrial and commercial applications.

Q: What is the difference in write cycle performance?

A: The AT93C46DN-SH-T completes write operations in 5 milliseconds compared to 10 milliseconds for the FT93C46A-USR-T. This performance improvement does not affect functional compatibility but enables faster data programming in time-sensitive applications.