FST8335M Equivalent & Substitute Parts Reference

Part Overview

The FST8335M from GeneSiC Semiconductor is a Schottky diode array featuring a 1 Pair Common Cathode configuration, capable of handling 35 V reverse voltage and 80A average rectified current per diode. It is designed for chassis mount applications and utilizes the D61-3M package. The FST8335M is now classified as Obsolete, necessitating the identification of compatible substitutes with matching electrical and mechanical parameters for continued design support and component maintenance.

Key Parameters

Parameter	Main Part (FST8335M)
Manufacturer	GeneSiC Semiconductor
Category	Diodes, Rectifiers
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	35 V
Current - Average Rectified (Io) (per Diode)	80A (DC)
Voltage - Forward (Vf) (Max) @ If	650 mV @ 80 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	1.5 mA @ 20 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	D61-3M
Supplier Device Package	D61-3M
Product Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080

Substitute Part Grouping Explanation

Substitution for the FST8335M is grounded in the following key parameters: diode configuration, technology, maximum DC reverse voltage, average rectified current per diode, forward voltage drop at specified current, reverse leakage current at specified voltage, switching speed, operating temperature range, mounting type, and package/case. Only parts matching or aligning with these criteria are considered suitable substitutes.

Parameter Comparison

Parameter	Main Part (FST8335M)	Substitute (84CNQ035S2)
Manufacturer	GeneSiC Semiconductor	SMC Diode Solutions
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode
Technology	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max)	35 V	35 V
Current - Average Rectified (Io) (per Diode)	80A (DC)	80A
Voltage - Forward (Vf) (Max) @ If	650 mV @ 80 A	620 mV @ 80 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	1.5 mA @ 20 V	5 mA @ 35 V
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 125°C
Mounting Type	Chassis Mount	Chassis Mount
Package / Case	D61-3M	PRM2
Supplier Device Package	D61-3M	PRM2
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
ECCN	EAR99	EAR99
HTSUS	8541.10.0080	8541.10.0080

Engineering Selection Recommendations

The main part, FST8335M, is obsolete. Substitute 84CNQ035S2 is active, ROHS3 compliant, and maintains the required electrical and mechanical parameters. Both parts share the same ECCN and HTSUS classifications. Moisture Sensitivity Level is equivalent.

Frequently Asked Questions (FAQ)

Q1: What criteria determine suitable substitutes for the FST8335M diode module?
A1: Crucial criteria are diode configuration (1 Pair Common Cathode), Schottky technology, identical or higher voltage and current ratings, comparable forward voltage, reverse leakage and speed specifications, compatible operating temperature range, matching mounting type, and similar package/case format.

Q2: Are there differences in package types between the FST8335M and its substitute 84CNQ035S2?
A2: The FST8335M uses the D61-3M package, while the 84CNQ035S2 uses the PRM2 package. Mounting type is chassis mount for both.

Q3: Is there a difference in compliance or regulatory status?
A3: Both the FST8335M and 84CNQ035S2 share the same ECCN (EAR99) and HTSUS codes. The 84CNQ035S2 is ROHS3 compliant.

Q4: Is substitution affected by forward voltage or leakage current differences?
A4: Only parameters explicitly provided are considered. Both parts have similar forward voltage drop at 80A. Reverse leakage current is different as specified.

Q5: Are moisture sensitivity levels compatible?
A5: Both parts have an MSL rating of 1 (unlimited), indicating suitable compatibility in that aspect.

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