Equivalent & Substitute Parts Reference: FST83100M

Part Overview

The GeneSiC Semiconductor FST83100M is an obsolete diode array, categorized under Diodes, Rectifiers. It features a Schottky diode configuration with 1 Pair Common Cathode, a maximum DC reverse voltage of 100 V, and an average rectified current of 80A (DC). The device is designed for chassis mounting in a D61-3M package. Due to its obsolete product status, it is necessary for engineers to identify substitute models that deliver equivalent electrical and mechanical performance within the same product category.

Key Parameters

Parameter	FST83100M
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io) (per Diode)	80A (DC)
Voltage - Forward (Vf) (Max) @ If	840 mV @ 80 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	1.5 mA @ 20 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	D61-3M

Substitute Part Grouping Explanation

Substitutes for FST83100M are grouped strictly based on matching electrical and mechanical parameters within the same category. The critical parameters include diode configuration, technology, DC reverse voltage (Vr), average rectified current (Io), voltage forward (Vf) at specified current, switching speed, reverse leakage current, operating junction temperature range, mounting type, and package/case type. All substitute relationships are directly established by alignment of these criteria.

Parameter Comparison

Parameter	FST83100M (GeneSiC Semiconductor)	83CNQ100S2 (SMC Diode Solutions)
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode
Technology	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V	100 V
Current - Average Rectified (Io) (per Diode)	80A (DC)	80A
Voltage - Forward (Vf) (Max) @ If	840 mV @ 80 A	1 V @ 80 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	1.5 mA @ 20 V	1.5 mA @ 100 V
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 175°C
Mounting Type	Chassis Mount	Chassis Mount
Package / Case	D61-3M	PRM2

Engineering Selection Recommendations

Selection between FST83100M and the substitute 83CNQ100S2 should consider the obsolete status of FST83100M. 83CNQ100S2 is active, ROHS3 compliant, and subject to REACH regulations as specified. Certification and compliance parameters are detailed in the provided substitute part listing and must align with relevant application and regulatory requirements. Ensure package/case and mounting compatibility as indicated.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters must match for a substitute in the Diodes, Rectifiers category?
A1: Diode configuration, Schottky technology, DC reverse voltage, average rectified current, forward voltage at specified current, speed, and reverse leakage current must directly match across the main and substitute parts.

Q2: How do differences in package/case affect substitution?
A2: Substitution requires compatibility in mounting type and package/case. FST83100M uses D61-3M, while 83CNQ100S2 uses PRM2. Verify chassis mount specifications and dimensional fit as per provided data.

Q3: Does operating temperature range impact substitute selection?
A3: Both main and substitute parts support similar minimum operating temperatures, with the substitute supporting a higher maximum junction temperature. Confirm thermal requirements with the provided ranges.

Q4: Are there any compliance-related considerations between FST83100M and 83CNQ100S2?
A4: 83CNQ100S2 is ROHS3 compliant and REACH affected as specified. FST83100M's compliance details are not provided.

Q5: What is the significance of product status when selecting substitutes?
A5: FST83100M is obsolete; thus, active status of 83CNQ100S2 ensures continued availability and support for new or ongoing applications.

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