FS75R12KS4BOSA1 IGBT Module Equivalent & Substitute Parts

Part Overview

The FS75R12KS4BOSA1 is a three-phase inverter IGBT module manufactured by Infineon Technologies, rated for 1200 V collector-emitter breakdown voltage and 100 A maximum collector current with 500 W maximum power dissipation. This module is designed for chassis mount applications in industrial power conversion systems.

The FS75R12KS4BOSA1 has reached obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	V
Current - Collector (Ic) (Max)	100	A
Power - Max	500	W
Vce(on) (Max) @ Vge, Ic	3.7 V @ 15 V, 75 A	V
Current - Collector Cutoff (Max)	5	mA
Input Capacitance (Cies) @ Vce	5.1 nF @ 25 V	nF
Operating Temperature Range	-40 to 125	°C
Configuration	Three Phase Inverter	—
Mounting Type	Chassis Mount	—
Package / Case	Module	—

Substitute Part Grouping Explanation

Substitution eligibility for the FS75R12KS4BOSA1 is determined by the following critical parameters:

Mandatory Matching Parameters:

Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Configuration: Three Phase Inverter
Mounting Type: Chassis Mount
Package / Case: Module

Allowable Variation Parameters:

Power - Max: Equal or greater than 500 W
Operating Temperature Range: Equal or extended range
Vce(on) (Max): Lower values indicate improved performance
Current - Collector Cutoff (Max): Lower values indicate improved performance
Input Capacitance (Cies): Variation acceptable within application requirements

The FS100R12KT4BOSA1 qualifies as a manufacturer-recommended substitute based on matching all mandatory parameters while providing improved electrical characteristics and extended operating temperature range.

Parameter Comparison

Parameter	FS75R12KS4BOSA1	FS100R12KT4BOSA1	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	1200	V
Current - Collector (Ic) (Max)	100	100	A
Power - Max	500	515	W
Vce(on) (Max) @ Vge, Ic	3.7 V @ 15 V, 75 A	2.1 V @ 15 V, 100 A	V
Current - Collector Cutoff (Max)	5	1	mA
Input Capacitance (Cies) @ Vce	5.1 nF @ 25 V	6.3 nF @ 25 V	nF
Operating Temperature Range	-40 to 125	-40 to 150	°C
Configuration	Three Phase Inverter	Three Phase Inverter	—
Mounting Type	Chassis Mount	Chassis Mount	—
Package / Case	Module	Module	—
IGBT Type	Standard	Trench Field Stop	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The FS100R12KT4BOSA1 is designated as the manufacturer-recommended substitute for the obsolete FS75R12KS4BOSA1. Both components maintain identical voltage and current ratings, three-phase inverter configuration, and chassis mount package specifications.

The FS100R12KT4BOSA1 provides the following advantages:

Increased maximum power rating: 515 W versus 500 W
Reduced on-state voltage drop: 2.1 V at 100 A versus 3.7 V at 75 A, resulting in lower conduction losses
Reduced collector cutoff current: 1 mA versus 5 mA, indicating improved reverse blocking characteristics
Extended operating temperature range: -40°C to 150°C versus -40°C to 125°C
Trench Field Stop IGBT technology provides improved switching performance

Both components maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility. The FS100R12KT4BOSA1 is currently discontinued at DiGi Electronics but remains available through alternative distribution channels with 631 pieces in new original stock.

Frequently Asked Questions (FAQ)

Q: Can the FS100R12KT4BOSA1 directly replace the FS75R12KS4BOSA1 in existing designs?

A: Yes. Both components share identical voltage ratings (1200 V), current ratings (100 A), three-phase inverter configuration, and chassis mount package specifications. The FS100R12KT4BOSA1 provides improved electrical performance characteristics and extended operating temperature range, making it a direct functional replacement.

Q: What is the significance of the Trench Field Stop IGBT technology in the FS100R12KT4BOSA1?

A: Trench Field Stop technology is an advanced IGBT design that improves switching performance and reduces conduction losses compared to standard IGBT designs. This results in lower on-state voltage drop and improved thermal efficiency in power conversion applications.

Q: Are there any thermal management considerations when substituting these components?

A: The FS100R12KT4BOSA1 operates at a lower on-state voltage drop (2.1 V at 100 A) compared to the FS75R12KS4BOSA1 (3.7 V at 75 A), resulting in reduced power dissipation and lower thermal load. The extended operating temperature range (-40°C to 150°C) provides additional thermal margin. Existing thermal management designs for the original component will remain adequate for the substitute.

Q: What is the impact of the increased input capacitance in the FS100R12KT4BOSA1?

A: The FS100R12KT4BOSA1 has an input capacitance of 6.3 nF at 25 V compared to 5.1 nF for the FS75R12KS4BOSA1. This 1.2 nF increase is within typical application tolerances and does not require gate drive circuit modifications for standard three-phase inverter applications.

Q: Are both components available in the same packaging format?

A: Yes. Both the FS75R12KS4BOSA1 and FS100R12KT4BOSA1 are supplied as chassis mount modules with identical mechanical interfaces, enabling direct physical replacement without modifications to mounting hardware or thermal interface materials.

Q: What compliance certifications apply to both components?

A: Both components maintain ROHS3 compliance and REACH unaffected status, ensuring compatibility with current environmental and regulatory requirements for industrial power conversion equipment.

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