FS1ME-TP Equivalent & Substitute Parts

Part Overview

The FS1ME-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 1000 V DC reverse voltage and 1 A average rectified current in a surface mount SMAE package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design continuity. The FS1ME-TP features fast recovery characteristics with a reverse recovery time of 500 ns, suitable for applications requiring rapid switching performance in power conversion circuits.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.3 @ 1 A	V
Reverse Recovery Time (trr)	500	ns
Current - Reverse Leakage @ Vr	5 @ 1000 V	µA
Capacitance @ Vr, F	15 @ 4V, 1MHz	pF
Mounting Type	Surface Mount	-
Package / Case	DO-214AC, SMA	-
Operating Temperature - Junction	-50 to 150	°C
Technology	Standard	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the FS1ME-TP is determined by the following critical parameters: voltage rating (1000 V minimum), current rating (1 A), reverse recovery time (500 ns or faster for fast recovery types), forward voltage drop (1.3 V maximum at 1 A), and surface mount package compatibility (DO-214AC/SMA or equivalent mechanical form factor).

Substitute parts are grouped into three categories:

Parametric Equivalents maintain identical electrical specifications and fast recovery characteristics (≤500 ns). These parts are direct functional replacements with no performance trade-offs.

Upgrade Parts meet or exceed the electrical specifications of the FS1ME-TP but may differ in secondary characteristics such as capacitance, reverse recovery time, or operating temperature range. These parts provide enhanced performance or improved availability.

Similar Parts share the same voltage and current ratings but differ in recovery speed (standard recovery >500 ns) or package configuration (DO-214BA instead of DO-214AC). These parts require design verification for applications sensitive to switching speed.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) V	Io (A)	Vf (Max) @ If (V)	trr (ns)	Speed Type	Package	Status
FS1ME-TP	Micro Commercial Co	1000	1	1.3 @ 1 A	500	Fast Recovery	DO-214AC (SMAE)	Obsolete
FS1M-LTP	Micro Commercial Co	1000	1	1.3 @ 1 A	500	Fast Recovery	DO-214AC (SMA)	Active
FS1M-TP	Micro Commercial Co	1000	1	1.3 @ 1 A	500	Fast Recovery	DO-214AC (HSMA)	Obsolete
CFRA107-G	Comchip Technology	1000	1	1.3 @ 1 A	500	Fast Recovery	DO-214AC (SMA)	Active
RGF1M	onsemi	1000	1	1.3 @ 1 A	500	Fast Recovery	DO-214AC (SMA)	Not For New Designs
RS1M	EVVO Semi	1000	1	1.3 @ 1 A	500	Fast Recovery	DO-214AC (SMA)	Active
CGRA4007-G	Comchip Technology	1000	1	1.1 @ 1 A	-	Standard Recovery	DO-214AC (SMA)	Active
GF1K-E3/67A	Vishay General Semiconductor	800	1	1.2 @ 1 A	2000	Standard Recovery	DO-214BA (GF1)	Active
GF1M	onsemi	1000	1	1.2 @ 1 A	2000	Standard Recovery	DO-214AC (SMA)	Not For New Designs
GF1M-E3/5CA	Vishay General Semiconductor	1000	1	1.2 @ 1 A	2000	Standard Recovery	DO-214BA (GF1)	Active
GF1M-E3/67A	Vishay General Semiconductor	1000	1	1.2 @ 1 A	2000	Standard Recovery	DO-214BA (GF1)	Active

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalents):

FS1M-LTP is the primary recommended substitute. This part is manufactured by Micro Commercial Co, the same original manufacturer as the FS1ME-TP, and maintains identical electrical specifications including 1000 V reverse voltage, 1 A current rating, 500 ns reverse recovery time, and 1.3 V forward voltage drop. The FS1M-LTP is currently in active production status, ensuring long-term availability. Both parts are ROHS3 compliant and carry identical moisture sensitivity levels (MSL 1 - Unlimited).

CFRA107-G (Comchip Technology) and RS1M (EVVO Semi) are alternative parametric equivalents with active product status. Both maintain the fast recovery characteristic (500 ns) and identical voltage/current ratings. These parts provide additional sourcing options while preserving all critical electrical performance parameters.

For Enhanced Performance (Upgrade Parts):

RGF1M (onsemi) meets all electrical specifications of the FS1ME-TP with extended operating temperature range (-65°C to 175°C versus -50°C to 150°C). However, this part carries a "Not For New Designs" status, limiting its suitability for new development.

For Applications Tolerant of Slower Switching:

GF1M (onsemi) and GF1M-E3/5CA (Vishay) provide 1000 V / 1 A ratings with standard recovery characteristics (2 µs reverse recovery time). These parts are suitable only for applications where switching speed is not performance-critical. GF1M carries "Not For New Designs" status. GF1M-E3/5CA is active and available.

GF1K-E3/67A (Vishay) operates at 800 V maximum reverse voltage, making it unsuitable for 1000 V applications. This part is listed for reference only and does not constitute a valid substitute.

CGRA4007-G (Comchip Technology) features standard recovery characteristics and lower forward voltage (1.1 V at 1 A). This part is suitable only for applications where switching speed is not critical.

Compliance and Certification:

All recommended substitute parts are ROHS3 compliant and carry REACH Unaffected status, matching the regulatory profile of the FS1ME-TP. All parts are classified under ECCN EAR99 and HTSUS 8541.10.0080.

Frequently Asked Questions (FAQ)

Q: Can FS1M-LTP be used as a direct replacement for FS1ME-TP?

A: Yes. FS1M-LTP is a parametric equivalent with identical voltage rating (1000 V), current rating (1 A), reverse recovery time (500 ns), and forward voltage drop (1.3 V @ 1 A). The primary difference is the supplier device package designation (DO-214AC versus SMAE), but both are mechanically compatible DO-214AC/SMA form factors. FS1M-LTP is in active production, addressing the obsolescence of FS1ME-TP.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times of 500 ns or less, enabling rapid switching transitions suitable for high-frequency power conversion. Standard recovery diodes have reverse recovery times exceeding 500 ns (typically 2 µs or greater), resulting in slower switching and higher switching losses. The FS1ME-TP is a fast recovery type. Substitution with standard recovery types (GF1M, GF1M-E3/5CA, CGRA4007-G) is valid only for applications where switching speed does not impact performance.

Q: Are DO-214AC and DO-214BA packages interchangeable?

A: DO-214AC and DO-214BA are distinct package outlines with different mechanical dimensions and PCB footprints. Parts specified for DO-214AC (such as FS1ME-TP) require DO-214AC footprints. Parts in DO-214BA packages (GF1K-E3/67A, GF1M-E3/5CA, GF1M-E3/67A) require different PCB layouts and are not mechanically interchangeable without board redesign.

Q: What does "Not For New Designs" status mean?

A: Parts marked "Not For New Designs" (RGF1M, GF1M) are in mature or declining production phases. While these parts may be available from inventory, manufacturers do not recommend their use in new product development. For new designs, select parts with "Active" status such as FS1M-LTP, CFRA107-G, RS1M, or Vishay SUPERECTIFIER® variants.

Q: How does forward voltage drop affect circuit performance?

A: Forward voltage drop (Vf) determines the voltage loss across the diode during conduction. The FS1ME-TP specifies 1.3 V maximum at 1 A. Parametric equivalents (FS1M-LTP, CFRA107-G, RS1M) maintain this specification. Parts with lower Vf (such as CGRA4007-G at 1.1 V) reduce power dissipation but may have different recovery characteristics. Parts with lower Vf (such as GF1M-E3/5CA at 1.2 V) represent a minor improvement in efficiency.

Q: What is the significance of reverse leakage current?

A: Reverse leakage current (Ir) is the small current flowing through the diode when reverse-biased. The FS1ME-TP specifies 5 µA at 1000 V. All listed substitute parts maintain this specification, ensuring equivalent blocking performance and minimal standby power consumption.

Q: Can I substitute a 1 kV diode with an 800 V diode?

A: No. GF1K-E3/67A is rated for 800 V maximum reverse voltage, which is insufficient for applications requiring 1000 V blocking capability. Using an 800 V diode in a 1000 V application creates risk of diode failure and circuit damage. This part is not a valid substitute.

Q: What is the operating temperature range consideration?

A: The FS1ME-TP operates from -50°C to 150°C junction temperature. Most substitute parts maintain this range or extend it. RGF1M extends to -65°C to 175°C, providing wider operating margin. Vishay SUPERECTIFIER® parts (GF1M-E3/5CA, GF1M-E3/67A) also extend to -65°C to 175°C. For applications operating near temperature extremes, extended-range parts provide additional design margin.

Q: How does capacitance affect diode selection?

A: Junction capacitance (Cj) affects switching speed and high-frequency performance. The FS1ME-TP specifies 15 pF at 4 V, 1 MHz. Parametric equivalents maintain this specification. RGF1M specifies lower capacitance (8.5 pF), which may improve high-frequency performance. FS1M-TP specifies higher capacitance (50 pF), which may degrade high-frequency response. For applications sensitive to capacitance, verify that substitute parts meet the original specification.

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