FRA801GF-BP Equivalent & Substitute Parts

Part Overview

The FRA801GF-BP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 50V DC reverse voltage and 8A average rectified current in a through-hole TO-220-2 isolated tab package. This component is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. The diode features fast recovery characteristics with a reverse recovery time of 150 ns and operates across a junction temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	50	V
Current - Average Rectified (Io)	8	A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 8 A	V
Reverse Recovery Time (trr)	150	ns
Mounting Type	Through Hole	—
Package / Case	TO-220-2 Isolated Tab	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FRA801GF-BP is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 50V
Current - Average Rectified (Io): Must equal or exceed 8A
Mounting Type: Must be Through Hole
Package / Case: Must be TO-220-2 configuration
Operating Temperature Range: Must encompass -55°C to 150°C

Compliance Requirements:

RoHS3 Compliant status required for regulatory alignment
Moisture Sensitivity Level (MSL) of 1 (Unlimited) acceptable

The HERAF801G C0G from Taiwan Semiconductor Corporation meets all substitution criteria and is classified as an active product, providing design continuity for applications currently using the obsolete FRA801GF-BP.

Parameter Comparison

Parameter	FRA801GF-BP (Micro Commercial Co)	HERAF801G C0G (Taiwan Semiconductor Corporation)
Voltage - DC Reverse (Vr) (Max)	50 V	50 V
Current - Average Rectified (Io)	8 A	8 A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 8 A	1 V @ 8 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	150 ns	50 ns
Current - Reverse Leakage @ Vr	5 µA @ 50 V	10 µA @ 50 V
Capacitance @ Vr, F	60 pF @ 4V, 1MHz	80 pF @ 4V, 1MHz
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-2 Isolated Tab	TO-220-2 Full Pack
Operating Temperature - Junction	-55°C to 150°C	-55°C to 150°C
Technology	Standard	Standard
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active

Engineering Selection Recommendations

The HERAF801G C0G from Taiwan Semiconductor Corporation is a direct electrical substitute for the FRA801GF-BP. Both components share identical voltage and current ratings, operate across the same temperature range, and maintain ROHS3 compliance with unlimited moisture sensitivity classification.

The HERAF801G C0G offers improved performance characteristics in specific parameters: forward voltage drop is reduced from 1.3V to 1V at 8A, and reverse recovery time is improved from 150ns to 50ns. These enhancements result in lower power dissipation and faster switching response.

The primary distinction between the components is product status: the FRA801GF-BP is obsolete, while the HERAF801G C0G is active and currently in production. For new designs and ongoing production requirements, the HERAF801G C0G provides assured long-term availability and supply chain continuity.

Both components utilize through-hole mounting in TO-220-2 packages, ensuring mechanical and thermal compatibility in existing PCB layouts. The isolated tab configuration of the original part is functionally equivalent to the full pack configuration of the substitute, as both provide the same electrical isolation and thermal management characteristics required for standard rectifier applications.

Frequently Asked Questions (FAQ)

Q: Can the HERAF801G C0G be used as a direct replacement for the FRA801GF-BP in existing designs?

A: Yes. Both components meet identical electrical specifications for voltage rating (50V), current rating (8A), and operating temperature range (-55°C to 150°C). Both are through-hole mounted in TO-220-2 packages and maintain ROHS3 compliance. The HERAF801G C0G is electrically and mechanically compatible with applications designed for the FRA801GF-BP.

Q: What are the differences in forward voltage between these two diodes?

A: The FRA801GF-BP has a maximum forward voltage of 1.3V at 8A, while the HERAF801G C0G has a maximum forward voltage of 1V at 8A. The lower forward voltage of the HERAF801G C0G results in reduced power dissipation during operation.

Q: How do the reverse recovery times compare?

A: The FRA801GF-BP has a reverse recovery time of 150ns, while the HERAF801G C0G has a reverse recovery time of 50ns. The faster recovery time of the HERAF801G C0G enables improved switching performance and reduced switching losses in high-frequency applications.

Q: Are there package differences between these components?

A: Both components use through-hole TO-220-2 packages. The FRA801GF-BP features an isolated tab configuration, while the HERAF801G C0G features a full pack configuration. Both configurations provide equivalent electrical isolation and thermal management for standard rectifier applications.

Q: Why is the FRA801GF-BP classified as obsolete?

A: The FRA801GF-BP is no longer in active production. The HERAF801G C0G is the active equivalent product currently manufactured and available for procurement.

Q: Do both components meet the same compliance standards?

A: Yes. Both the FRA801GF-BP and HERAF801G C0G are ROHS3 compliant and have a Moisture Sensitivity Level (MSL) of 1 (Unlimited), indicating equivalent regulatory and environmental compliance.

Q: What is the reverse leakage current difference?

A: The FRA801GF-BP has a reverse leakage current of 5µA at 50V, while the HERAF801G C0G has a reverse leakage current of 10µA at 50V. Both values are within acceptable ranges for general-purpose rectifier applications.

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