Equivalent & Substitute Parts for FR302-T

Part Overview

The FR302-T is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. The device features fast recovery characteristics with a reverse recovery time of 150 ns and operates across a junction temperature range of -65°C to 175°C.

The FR302-T is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this rectifier specification.

Substiute Parts

FR302-T
Diodes IncorporatedIn Stock: 921FR302-T Datasheet
FR302-T
Current Part
1N5186
Microchip TechnologyIn Stock: 7961N5186 Datasheet
1N5186
MFR Recommended
1N5401-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 620481N5401-E3/54 Datasheet
1N5401-E3/54
MFR Recommended
1N5401-G
Comchip TechnologyIn Stock: 93111N5401-G Datasheet
1N5401-G
MFR Recommended
1N5401G
Good-Ark SemiconductorIn Stock: 14161N5401G Datasheet
1N5401G
MFR Recommended
1N5401RLG
onsemiIn Stock: 37001N5401RLG Datasheet
1N5401RLG
MFR Recommended
1N5416
Microchip TechnologyIn Stock: 55061N5416 Datasheet
1N5416
MFR Recommended
1N5804
Solid State Inc.In Stock: 52151N5804 Datasheet
1N5804
MFR Recommended
1N6074
Microchip TechnologyIn Stock: 11171N6074 Datasheet
1N6074
MFR Recommended
EGP30B
Fairchild SemiconductorIn Stock: 3473EGP30B Datasheet
EGP30B
MFR Recommended
FR302GP-AP
Micro Commercial CoIn Stock: 1039FR302GP-AP Datasheet
FR302GP-AP
MFR Recommended
GI501-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6343GI501-E3/54 Datasheet
GI501-E3/54
MFR Recommended
GI501-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1131GI501-E3/73 Datasheet
GI501-E3/73
MFR Recommended
GP30B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3807GP30B-E3/54 Datasheet
GP30B-E3/54
MFR Recommended
GP30B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 930GP30B-E3/73 Datasheet
GP30B-E3/73
MFR Recommended
HER302GA-G
Comchip TechnologyIn Stock: 779HER302GA-G Datasheet
HER302GA-G
MFR Recommended
HER302GT-G
Comchip TechnologyIn Stock: 789HER302GT-G Datasheet
HER302GT-G
MFR Recommended
MR851G
onsemiIn Stock: 3369MR851G Datasheet
MR851G
MFR Recommended
MR851RLG
onsemiIn Stock: 7576MR851RLG Datasheet
MR851RLG
MFR Recommended
P300B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1148P300B-E3/54 Datasheet
P300B-E3/54
MFR Recommended
RGP25B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3759RGP25B-E3/54 Datasheet
RGP25B-E3/54
MFR Recommended
RGP30B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 837RGP30B-E3/73 Datasheet
RGP30B-E3/73
MFR Recommended
SF5401-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 1099SF5401-TAP Datasheet
SF5401-TAP
MFR Recommended
SF5401-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 1144SF5401-TR Datasheet
SF5401-TR
MFR Recommended
UF5401-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 15174UF5401-E3/54 Datasheet
UF5401-E3/54
MFR Recommended
UF5401-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2736UF5401-E3/73 Datasheet
UF5401-E3/73
MFR Recommended
RGP30B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1072RGP30B-E3/54 Datasheet
RGP30B-E3/54
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A V
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction -65 to 175 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FR302-T is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD or equivalent axial configuration

Secondary Compatibility Factors:

  • Forward voltage (Vf) characteristics within acceptable operating ranges
  • Recovery speed classification (Fast Recovery or Standard Recovery)
  • Reverse recovery time (trr) and reverse leakage current specifications
  • Operating temperature range coverage
  • RoHS and REACH compliance status

Substitute parts are grouped into two categories based on recovery speed characteristics: Fast Recovery devices (trr ≤ 500 ns) and Standard Recovery devices (trr > 500 ns). Both categories satisfy the primary electrical and mechanical requirements of the FR302-T while offering active product status and improved supply availability.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] Speed trr [ns] Ir @ Vr [µA] Package Temp Range [°C] Product Status RoHS
FR302-T Diodes Incorporated 100 3 1.3 @ 3A Fast Recovery ≤ 500ns 150 10 @ 100V DO-201AD -65 to 175 Obsolete ROHS3
1N5186 Microchip Technology 100 3 1.5 @ 9A Fast Recovery ≤ 500ns 150 2 @ 100V B, Axial -65 to 175 Active Non-compliant
1N5401-E3/54 Vishay General Semiconductor 100 3 1.2 @ 3A Standard Recovery > 500ns 5 @ 100V DO-201AD -50 to 150 Active ROHS3
1N5401-G Comchip Technology 100 3 0.95 @ 3A Standard Recovery > 500ns 5 @ 100V DO-201AD -65 to 125 Active ROHS3
1N5401G Good-Ark Semiconductor 100 3 1.1 @ 3A Standard Recovery > 500ns 5 @ 100V DO-201AD -55 to 150 Active ROHS3
1N5401RLG onsemi 100 3 1.0 @ 3A Standard Recovery > 500ns 10 @ 100V DO-201AA, DO-27 -65 to 150 Not For New Designs ROHS3
1N5416 Microchip Technology 100 3 1.5 @ 9A Fast Recovery ≤ 500ns 150 1 @ 100V B, Axial -65 to 175 Active Non-compliant
1N5804 Solid State Inc. 100 2.5 0.875 @ 1A Fast Recovery ≤ 500ns 25 1 @ 100V DO-204AP -65 to 175 Active ROHS3
1N6074 Microchip Technology 100 0.85 2.04 @ 9.4A Fast Recovery ≤ 500ns 30 1 @ 100V A, Axial -65 to 155 Active Non-compliant
EGP30B Fairchild Semiconductor 100 3 0.95 @ 3A Fast Recovery ≤ 500ns 50 5 @ 100V DO-201AD -65 to 150 Active
FR302GP-AP Micro Commercial Co 100 3 1.3 @ 3A Fast Recovery ≤ 500ns 150 5 @ 100V DO-201AD -55 to 150 Active ROHS3

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

The following parts provide direct electrical and mechanical equivalence to the FR302-T:

  • 1N5401-E3/54 (Vishay General Semiconductor): Active product status with ROHS3 compliance. Identical package (DO-201AD) and electrical ratings (100 V, 3 A). Forward voltage of 1.2 V @ 3 A closely matches the original specification. Standard recovery speed classification. Extensive inventory availability (62,000 pcs).

  • 1N5401-G (Comchip Technology): Active product status with ROHS3 compliance. Identical package and electrical ratings. Forward voltage of 0.95 V @ 3 A provides improved efficiency. Standard recovery speed. Adequate inventory (9,280 pcs).

  • 1N5401G (Good-Ark Semiconductor): Active product status with ROHS3 compliance. Identical package and electrical ratings. Forward voltage of 1.1 V @ 3 A. Standard recovery speed. Moderate inventory (1,346 pcs).

  • EGP30B (Fairchild Semiconductor): Active product status. Identical package (DO-201AD) and electrical ratings. Forward voltage of 0.95 V @ 3 A. Fast recovery speed (trr = 50 ns) provides superior switching performance. Good inventory (3,382 pcs).

  • FR302GP-AP (Micro Commercial Co): Active product status with ROHS3 compliance. Identical package and electrical ratings. Forward voltage of 1.3 V @ 3 A matches the original specification exactly. Fast recovery speed with 150 ns trr. Moderate inventory (1,004 pcs).

Secondary Substitutes (Current Rating Deviation):

  • 1N5804 (Solid State Inc.): Active product status with ROHS3 compliance. Rated for 2.5 A average rectified current (below the 3 A requirement). Fast recovery speed with superior trr of 25 ns. Suitable only for applications with reduced current demands.

Not Recommended for New Designs:

  • 1N5401RLG (onsemi): Classified as "Not For New Designs." Although electrically compatible, this status precludes selection for ongoing production.

Non-Compliant Alternatives:

  • 1N5186 and 1N5416 (Microchip Technology): Both are RoHS non-compliant. Selection requires explicit compliance waiver documentation.

  • 1N6074 (Microchip Technology): Rated for 850 mA average rectified current, significantly below the 3 A requirement. RoHS non-compliant.

Frequently Asked Questions (FAQ)

Q: Can the 1N5401-E3/54 directly replace the FR302-T?

A: Yes. Both devices are rated for 100 V reverse voltage and 3 A average rectified current in DO-201AD through-hole packages. The 1N5401-E3/54 is active product status with ROHS3 compliance. Forward voltage of 1.2 V @ 3 A is within acceptable operating parameters. Standard recovery speed differs from the original fast recovery classification but does not preclude functional equivalence in most applications.

Q: What is the difference between Fast Recovery and Standard Recovery diodes?

A: Fast Recovery diodes exhibit reverse recovery times of 500 ns or less, while Standard Recovery diodes exceed 500 ns. Fast Recovery devices switch more rapidly and generate less reverse current, making them suitable for high-frequency switching applications. Standard Recovery devices are acceptable for lower-frequency rectification circuits. The FR302-T specifies Fast Recovery with 150 ns trr. Substitutes with Standard Recovery classification (1N5401-E3/54, 1N5401-G, 1N5401G) are electrically compatible but exhibit different transient response characteristics.

Q: Is the EGP30B a suitable replacement despite being manufactured by Fairchild Semiconductor?

A: Yes. The EGP30B meets all critical electrical and mechanical requirements: 100 V reverse voltage, 3 A average rectified current, DO-201AD package, and through-hole mounting. The device features Fast Recovery speed with 50 ns trr, providing superior switching performance compared to the original 150 ns specification. Active product status ensures supply availability.

Q: Why is the 1N5804 listed as a secondary substitute when it is rated for only 2.5 A?

A: The 1N5804 does not meet the mandatory 3 A current requirement of the FR302-T. It is included for reference in applications where design modifications permit reduced current ratings. The device offers superior fast recovery characteristics (25 ns trr) and ROHS3 compliance. Selection requires explicit circuit analysis to confirm current derating is acceptable.

Q: Can I use the 1N5186 or 1N5416 in new production?

A: Both devices are RoHS non-compliant. Use is restricted to applications with explicit RoHS exemption documentation or legacy product lines not subject to RoHS requirements. For new designs, select from the ROHS3-compliant alternatives listed in the Primary Substitutes category.

Q: What is the significance of the operating temperature range difference between the FR302-T (-65°C to 175°C) and some substitutes?

A: The FR302-T operates across a wider temperature range than several alternatives. For example, the 1N5401-E3/54 operates from -50°C to 150°C. If the application requires operation below -50°C or above 150°C, the 1N5401-E3/54 is not suitable. Verify the target application's temperature requirements before selection. The 1N5401-G, 1N5401RLG, and 1N5186 support the full -65°C lower limit.

Q: Are there package compatibility considerations between DO-201AD and other axial packages?

A: The FR302-T is specified in DO-201AD package. Substitutes 1N5186 and 1N5416 use package designation "B, Axial," which is mechanically compatible with DO-201AD footprints. The 1N5401RLG uses DO-201AA or DO-27 designations, also compatible with DO-201AD through-hole layouts. The 1N5804 uses DO-204AP package, which has different physical dimensions and is not directly interchangeable without PCB modification. The 1N6074 uses package "A, Axial," also not directly compatible. Verify PCB footprint compatibility before final selection.

Q: Which substitute offers the best forward voltage performance?

A: The 1N5401-G and EGP30B both specify 0.95 V forward voltage @ 3 A, representing the lowest values among available substitutes. Lower forward voltage reduces power dissipation and heat generation. The 1N5401RLG specifies 1.0 V @ 3 A. These devices are preferred for applications where thermal management or efficiency is critical.

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