FR1M Equivalent & Substitute Parts

Part Overview

The FR1M is an active, standard technology fast recovery rectifier diode manufactured by Diotec Semiconductor. This surface mount component operates at 1000 V DC reverse voltage with 1 A average rectified current and features a fast recovery time of 500 ns or less. The FR1M is packaged in DO-214AC (SMA) format for surface mount applications.

Equivalent and substitute parts are identified when components share identical or compatible electrical ratings and mechanical specifications, enabling direct replacement in circuit designs without functional degradation.

Substiute Parts

FR1M
Diotec SemiconductorIn Stock: 150220FR1M Datasheet
FR1M
Current Part
US1M-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14622US1M-M3/5AT Datasheet
US1M-M3/5AT
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 500 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Package / Case DO-214AC, SMA -
Mounting Type Surface Mount -
Operating Temperature - Junction -50°C ~ 150°C -
Technology Standard -

Substitute Part Grouping Explanation

Substitution eligibility for the FR1M is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC (SMA)
  • Mounting Type: Surface Mount
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Allowable Variation Ranges:

  • Voltage - Forward (Vf) (Max) @ If: Substitute values must not exceed the application's forward voltage tolerance
  • Current - Reverse Leakage @ Vr: Substitute values must not exceed the application's leakage current tolerance
  • Operating Temperature - Junction: Substitute range must encompass or exceed the application's operating temperature requirements

The US1M-M3/5AT manufactured by Vishay General Semiconductor - Diodes Division qualifies as a substitute part based on matching all mandatory criteria and operating within allowable variation ranges for forward voltage and reverse leakage specifications.

Parameter Comparison

Parameter FR1M (Diotec) US1M-M3/5AT (Vishay) Match Status
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V Identical
Current - Average Rectified (Io) 1 A 1 A Identical
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A 1.7 V @ 1 A Substitute Higher
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Identical
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 10 µA @ 1000 V Substitute Higher
Package / Case DO-214AC, SMA DO-214AC, SMA Identical
Mounting Type Surface Mount Surface Mount Identical
Operating Temperature - Junction -50°C ~ 150°C -55°C ~ 150°C Substitute Wider Range
Technology Standard Standard Identical
Product Status Active Active Identical

Engineering Selection Recommendations

FR1M (Diotec Semiconductor):

  • Primary selection for applications requiring the lowest forward voltage drop (1.3 V @ 1 A)
  • Lowest reverse leakage current specification (5 µA @ 1000 V)
  • Operating temperature range: -50°C ~ 150°C
  • Product status: Active
  • RoHS Status: Not applicable

US1M-M3/5AT (Vishay General Semiconductor - Diodes Division):

  • Substitute selection when FR1M availability is limited
  • Wider operating temperature range (-55°C ~ 150°C) accommodates lower ambient temperature applications
  • Higher forward voltage (1.7 V @ 1 A) and reverse leakage (10 µA @ 1000 V) require circuit design verification for thermal and power dissipation impact
  • Product status: Active
  • RoHS Status: ROHS3 Compliant
  • REACH Status: REACH Unaffected
  • Moisture Sensitivity Level: 1 (Unlimited)

Selection between these parts depends on application-specific requirements for forward voltage drop, reverse leakage current, and temperature operating range. Both parts maintain identical voltage and current ratings, package format, and fast recovery speed classification.

Frequently Asked Questions (FAQ)

Q: Can US1M-M3/5AT directly replace FR1M in all applications?

A: Direct replacement is possible when the application circuit design accommodates the higher forward voltage (1.7 V versus 1.3 V) and higher reverse leakage current (10 µA versus 5 µA) of the US1M-M3/5AT. Power dissipation and thermal management must be evaluated for the specific application.

Q: What are the key differences between FR1M and US1M-M3/5AT?

A: Both parts share identical 1000 V reverse voltage, 1 A current rating, DO-214AC (SMA) package, and fast recovery speed classification. The US1M-M3/5AT exhibits higher forward voltage drop and reverse leakage current, and provides a wider operating temperature range (-55°C to 150°C versus -50°C to 150°C).

Q: Are the packaging formats identical?

A: Yes. Both FR1M and US1M-M3/5AT use the DO-214AC (SMA) surface mount package format. FR1M is supplied in Tape & Reel (TR) format, while US1M-M3/5AT is supplied in Cut Tape (CT) format. The physical component dimensions and PCB footprint are identical.

Q: What compliance certifications apply to each part?

A: FR1M RoHS Status is Not applicable. US1M-M3/5AT is ROHS3 Compliant and REACH Unaffected. Both parts carry ECCN EAR99 and HTSUS 8541.10.0080 classifications.

Q: How do forward voltage differences affect circuit performance?

A: The 0.4 V difference in maximum forward voltage (1.3 V for FR1M versus 1.7 V for US1M-M3/5AT) results in increased power dissipation in the substitute part. At 1 A current, this represents 0.4 W additional dissipation. Thermal design and heat dissipation capability must accommodate this difference.

Q: What is the significance of reverse leakage current differences?

A: The US1M-M3/5AT reverse leakage current (10 µA @ 1000 V) is twice that of the FR1M (5 µA @ 1000 V). In high-impedance or precision analog circuits, this difference may affect circuit performance. Applications with strict leakage current requirements should prioritize the FR1M.

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