FQPF7P06 P-Channel MOSFET 60V 5.3A Equivalent & Substitute Parts

Part Overview

The FQPF7P06 is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with a continuous drain current of 5.3A at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and is designed for general-purpose switching and amplification applications requiring P-channel enhancement-mode operation.

The FQPF7P06 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance requirements for systems utilizing this component.

Substiute Parts

FQPF7P06
onsemiIn Stock: 18896FQPF7P06 Datasheet
FQPF7P06
Current Part
IRF9Z14PBF
Vishay SiliconixIn Stock: 1212IRF9Z14PBF Datasheet
IRF9Z14PBF
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 5.3 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 410 mOhm @ 2.65A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10V
Vgs (Max) ±25 V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 25V
Power Dissipation (Max) 24 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FQPF7P06 is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • FET Type: P-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Minimum 60V rating required
  • Continuous Drain Current (Id): Minimum 5.3A at 25°C required
  • Gate-Source Voltage (Vgs): Operating range must accommodate ±25V maximum
  • Threshold Voltage (Vgs(th)): Maximum 4V @ 250µA
  • On-State Resistance (Rds On): Maximum 410mOhm @ specified conditions
  • Operating Temperature Range: Minimum -55°C to 175°C (TJ)

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole configuration required
  • Package / Case: TO-220-3 footprint required
  • Moisture Sensitivity Level: MSL 1 (Unlimited) acceptable

The IRF9Z14PBF meets all electrical and mechanical substitution criteria for the FQPF7P06, with enhanced current and power dissipation ratings that provide design margin while maintaining full pin and footprint compatibility.

Parameter Comparison

Parameter FQPF7P06 (onsemi) IRF9Z14PBF (Vishay Siliconix) Unit
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 60 60 V
Continuous Drain Current (Id) @ 25°C 5.3 6.7 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 410 @ 2.65A, 10V 500 @ 4A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 8.2 @ 10V 12 @ 10V nC
Vgs (Max) ±25 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 295 @ 25V 270 @ 25V pF
Power Dissipation (Max) 24 43 W (Tc)
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IRF9Z14PBF as Primary Substitute:

The IRF9Z14PBF from Vishay Siliconix is a direct electrical and mechanical substitute for the obsolete FQPF7P06. Both devices share identical Vdss (60V), Vgs(th) (4V @ 250µA), and operating temperature range (-55°C to 175°C). The IRF9Z14PBF provides enhanced performance margins with 6.7A continuous drain current versus 5.3A, and 43W power dissipation versus 24W, enabling reliable operation in existing circuit designs without modification.

Compliance and Regulatory Status:

The IRF9Z14PBF carries Active product status and ROHS3 compliance certification, ensuring long-term availability and regulatory alignment. Both the FQPF7P06 and IRF9Z14PBF are REACH Unaffected and classified under ECCN EAR99, maintaining consistent export and supply chain compliance.

Package and Mounting Compatibility:

Both devices utilize Through Hole mounting in TO-220-3 footprint configuration with MSL 1 (Unlimited) moisture sensitivity rating. Direct PCB footprint compatibility is confirmed, eliminating layout redesign requirements.

Design Margin Consideration:

The IRF9Z14PBF's higher current rating (6.7A versus 5.3A) and power dissipation capability (43W versus 24W) provide design margin for thermal and electrical stress, supporting extended component life and improved reliability in replacement applications.

Frequently Asked Questions (FAQ)

Q: Can the IRF9Z14PBF directly replace the FQPF7P06 without PCB modification?

A: Yes. Both devices are packaged in TO-220-3 Through Hole configuration with identical pin assignments and footprint dimensions. Direct pin-for-pin substitution is supported without PCB layout changes.

Q: What is the significance of the higher current rating (6.7A) in the IRF9Z14PBF compared to the FQPF7P06 (5.3A)?

A: The IRF9Z14PBF's 6.7A continuous drain current rating exceeds the FQPF7P06's 5.3A specification. This provides design margin and allows the substitute to operate at lower junction temperatures under equivalent load conditions, extending component life and improving thermal performance.

Q: Are there differences in gate charge between these devices?

A: Yes. The FQPF7P06 specifies 8.2 nC gate charge at 10V, while the IRF9Z14PBF specifies 12 nC at 10V. This difference affects gate drive circuit timing and switching speed. Existing gate drive circuits designed for the FQPF7P06 will operate with the IRF9Z14PBF, though switching transients may be slightly slower due to increased gate charge.

Q: What is the maximum gate-source voltage difference between these parts?

A: The FQPF7P06 supports ±25V maximum Vgs, while the IRF9Z14PBF supports ±20V maximum Vgs. Circuits operating within ±20V gate-source voltage are fully compatible with both devices. Circuits requiring ±25V operation must remain with the FQPF7P06 or redesign gate drive circuits to operate within ±20V limits.

Q: How do the on-state resistance specifications compare?

A: The FQPF7P06 specifies 410 mOhm maximum Rds On at 2.65A and 10V gate-source voltage. The IRF9Z14PBF specifies 500 mOhm maximum Rds On at 4A and 10V gate-source voltage. At equivalent gate drive conditions, the FQPF7P06 exhibits lower on-state resistance. However, the IRF9Z14PBF's higher current rating and power dissipation capability compensate for this difference in most applications.

Q: Is the IRF9Z14PBF available in the same packaging format?

A: The FQPF7P06 is supplied in TO-220F-3 packaging, while the IRF9Z14PBF is supplied in TO-220AB packaging. Both are TO-220-3 footprint variants with identical pin configurations and Through Hole mounting. The packaging designation difference reflects manufacturer conventions but does not affect PCB compatibility or electrical performance.

Q: What is the product status difference, and why does it matter?

A: The FQPF7P06 is classified as Obsolete, indicating discontinued production and limited future availability. The IRF9Z14PBF is classified as Active, confirming ongoing production and long-term supply chain availability. This status difference makes the IRF9Z14PBF the preferred choice for new designs and ongoing production support.

Q: Are both devices compliant with current regulatory requirements?

A: Yes. Both the FQPF7P06 and IRF9Z14PBF are REACH Unaffected and classified under ECCN EAR99. The IRF9Z14PBF additionally carries ROHS3 compliance certification, meeting current environmental and regulatory standards for electronic components.

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