FQPF7N20 Equivalent & Substitute Parts

Part Overview

The FQPF7N20 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 4.8A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and is designed for general-purpose switching applications requiring moderate voltage and current ratings.

The FQPF7N20 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	4.8	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	690	mOhm @ 2.4A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	10	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ Vds	400	pF @ 25V
Power Dissipation (Max)	37	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	-
Package Type	TO-220-3	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute parts for the FQPF7N20 are identified based on electrical and mechanical compatibility within the N-Channel MOSFET category. The substitution logic is structured around the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 200V
Continuous Drain Current (Id) must equal or exceed 4.8A at 25°C
On-State Resistance (Rds On) characteristics must support equivalent switching performance
Gate Threshold Voltage (Vgs(th)) must fall within compatible operating ranges
Maximum Gate Voltage (Vgs Max) must accommodate ±30V or greater
Operating Temperature Range must support -55°C to 150°C or equivalent upper limit

Mechanical Compatibility Criteria:

Mounting Type: Through Hole configuration
Package Type: TO-220 family variants (TO-220F-3, TO-220FM, TO-251-3)

Substitute parts are classified into two categories:

Direct Substitutes: Parts meeting or exceeding all electrical parameters with identical or compatible package footprints.

Similar Substitutes: Parts meeting core electrical requirements with package variations that may require PCB layout modifications.

Parameter Comparison

Parameter	FQPF7N20 (onsemi)	RCX080N25 (Rohm)	IRFU220PBF (Vishay)	RCX081N20 (Rohm)
Vdss (V)	200	250	200	200
Id @ 25°C (A, Tc)	4.8	8	4.8	8
Rds On Max (mOhm)	690 @ 2.4A, 10V	600 @ 4A, 10V	800 @ 2.9A, 10V	770 @ 4A, 10V
Vgs(th) Max (V)	5 @ 250µA	5 @ 1mA	4 @ 250µA	5.25 @ 1mA
Qg Max (nC @ 10V)	10	15	14	8.5
Vgs Max (±V)	±30	±30	±20	±30
Ciss Max (pF @ 25V)	400	840	260	330
Power Dissipation Max (W, Tc)	37	35	42	40
Operating Temperature (°C, TJ)	-55 to 150	to 150	-55 to 150	to 150
Package Type	TO-220F-3	TO-220FM	TO-251AA	TO-220FM
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

RCX080N25 (Rohm Semiconductor) - Direct Substitute

The RCX080N25 is an Active product with ROHS3 compliance. This part exceeds the FQPF7N20 electrical specifications with 250V Vdss and 8A continuous drain current. The on-state resistance of 600mOhm at 4A, 10V is superior to the FQPF7N20 specification. The TO-220FM package is mechanically compatible with TO-220F-3 footprints. This substitute is suitable for applications requiring enhanced voltage and current margins.

IRFU220PBF (Vishay Siliconix) - Similar Substitute

The IRFU220PBF is an Active product with ROHS3 compliance and matches the FQPF7N20 electrical specifications exactly: 200V Vdss and 4.8A continuous drain current. The on-state resistance of 800mOhm is within acceptable tolerance. However, this part uses a TO-251AA package, which differs from the TO-220F-3 footprint. PCB layout modification is required for implementation. The REACH Status is listed as Affected, requiring compliance verification for specific applications.

RCX081N20 (Rohm Semiconductor) - Direct Substitute

The RCX081N20 is an Active product with ROHS3 compliance. This part matches the FQPF7N20 voltage specification at 200V Vdss and exceeds current rating with 8A continuous drain current. The on-state resistance of 770mOhm at 4A, 10V is comparable. The TO-220FM package is mechanically compatible with TO-220F-3 footprints. Gate charge is reduced to 8.5nC, offering improved switching characteristics. This substitute provides enhanced current capacity with identical voltage rating.

Recommendation Priority:

For direct PCB compatibility without layout modification: RCX081N20 or RCX080N25.

For electrical equivalence with package variation: IRFU220PBF.

Frequently Asked Questions (FAQ)

Q: Can the RCX080N25 be used in place of the FQPF7N20 without circuit modification?

A: The RCX080N25 is electrically compatible and exceeds the FQPF7N20 specifications. The TO-220FM package is mechanically compatible with TO-220F-3 PCB footprints. No circuit modification is required for voltage or current ratings. Thermal management should account for the 35W power dissipation rating.

Q: What is the primary difference between RCX080N25 and RCX081N20?

A: The RCX080N25 is rated for 250V Vdss with 8A drain current, while the RCX081N20 is rated for 200V Vdss with 8A drain current. Both use TO-220FM packages. The RCX080N25 provides higher voltage margin; the RCX081N20 provides exact voltage matching to the FQPF7N20. Selection depends on circuit voltage requirements.

Q: Why does the IRFU220PBF use a different package (TO-251AA) than the FQPF7N20 (TO-220F-3)?

A: The IRFU220PBF is manufactured by Vishay Siliconix using their standard TO-251AA package configuration. While electrically equivalent to the FQPF7N20, the TO-251AA package has a different pin layout and footprint. PCB redesign is necessary for this substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The RCX080N25, IRFU220PBF, and RCX081N20 are all ROHS3 compliant. The FQPF7N20 RoHS status is not specified in the provided data.

Q: What is the impact of higher gate charge (Qg) in the RCX080N25 compared to the FQPF7N20?

A: The RCX080N25 has a gate charge of 15nC compared to the FQPF7N20 at 10nC. Higher gate charge requires more energy to switch the device and may increase switching losses. Gate driver circuits must supply sufficient current to meet switching frequency requirements. This is a design consideration but does not prevent substitution.

Q: Can the FQPF7N20 be replaced with the RCX081N20 in high-frequency switching applications?

A: The RCX081N20 has lower gate charge (8.5nC) than the FQPF7N20 (10nC), which is advantageous for high-frequency operation. The reduced gate charge results in lower switching losses. The RCX081N20 is suitable for high-frequency applications and offers improved performance in this regard.

Q: What compliance considerations apply to the IRFU220PBF?

A: The IRFU220PBF carries a REACH Status of Affected, indicating compliance requirements for specific regulatory jurisdictions. Applications subject to REACH regulations must verify compliance before implementation. The RCX080N25 and RCX081N20 both carry REACH Unaffected status.

Q: Are the substitute parts available in the same packaging format (Bulk vs. Tube)?

A: The FQPF7N20 is listed as New Original In Stock with packaging not specified. The RCX080N25 and RCX081N20 are supplied in Bulk packaging. The IRFU220PBF is supplied in Tube packaging. Packaging format does not affect electrical or mechanical compatibility but may impact procurement and handling procedures.

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