FQPF6N90C N-Channel 900V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The FQPF6N90C is an N-Channel 900V 6A MOSFET manufactured by onsemi in the QFET® series, housed in a TO-220F-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part delivers 56W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ).

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ Id, Vgs	2.3	Ohm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs	40	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1770	pF @ 25V
Power Dissipation (Max)	56	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220F-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FQPF6N90C is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 900V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Family: TO-220 series

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 6A
Rds On (Max): Equal to or lower than 2.3 Ohm (lower values indicate improved performance)
Gate Charge (Qg): Comparable values minimize switching losses
Power Dissipation (Max): Equal to or greater than 56W
Operating Temperature Range: Minimum -55°C to 150°C (TJ)

Substitute parts must satisfy all mandatory criteria and maintain performance compatibility within the specified electrical envelope. Parts are classified as either manufacturer-recommended substitutes (direct functional replacements) or similar alternatives (equivalent performance with minor parameter variations).

Parameter Comparison

Parameter	FQPF6N90C (Main)	FQPF9N90CT (MFR Recommended)	2SK3565(Q,M) (Similar)	STP6NK90ZFP (Similar)
Manufacturer	onsemi	onsemi	Toshiba Semiconductor and Storage	STMicroelectronics
Drain to Source Voltage (Vdss)	900V	900V	900V	900V
Continuous Drain Current (Id) @ 25°C	6A	8A	5A	5.8A
Rds On (Max) @ Id, Vgs	2.3Ω @ 3A, 10V	1.4Ω @ 4A, 10V	2.5Ω @ 3A, 10V	2Ω @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V	58nC @ 10V	28nC @ 10V	60.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1770pF @ 25V	2730pF @ 25V	1150pF @ 25V	1350pF @ 25V
Power Dissipation (Max)	56W	68W	45W	30W
Operating Temperature Range	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
Package Type	TO-220F-3	TO-220F-3	TO-220SIS	TO-220FP
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FQPF9N90CT (onsemi) - Manufacturer Recommended Substitute

The FQPF9N90CT is the primary substitute for the obsolete FQPF6N90C. Both devices are manufactured by onsemi within the QFET® series and share identical voltage ratings (900V Vdss) and package configuration (TO-220F-3). The FQPF9N90CT provides enhanced performance with 8A continuous drain current versus 6A, improved on-resistance (1.4Ω versus 2.3Ω), and increased power dissipation capability (68W versus 56W). The device maintains active product status and ROHS3 compliance. This substitute is suitable for direct replacement in applications where the increased current and power handling capacity do not create thermal or circuit design conflicts.

STP6NK90ZFP (STMicroelectronics) - Similar Alternative

The STP6NK90ZFP is an active STMicroelectronics device in the SuperMESH™ series, maintaining the 900V Vdss rating and through-hole TO-220FP package configuration. This device delivers 5.8A continuous drain current and 2Ω on-resistance, positioning it as a near-equivalent alternative. The STP6NK90ZFP exhibits lower power dissipation (30W) compared to the main part (56W), which may require thermal design consideration in high-power applications. ROHS3 compliance and active product status support long-term availability.

2SK3565(Q,M) (Toshiba Semiconductor and Storage) - Similar Alternative

The 2SK3565(Q,M) is an active Toshiba device in the π-MOSIV series with 900V Vdss rating and TO-220SIS package configuration. This device provides 5A continuous drain current and 2.5Ω on-resistance, representing a slight performance reduction relative to the main part. Power dissipation is rated at 45W, below the main part specification. The device maintains RoHS compliance and active product status. Package configuration differs (TO-220SIS versus TO-220F-3), requiring mechanical verification for PCB layout compatibility.

All substitute parts maintain the mandatory 900V Vdss rating, N-Channel configuration, and through-hole mounting type. Selection should be based on application-specific requirements for current capacity, on-resistance, power dissipation, and package mechanical constraints.

Frequently Asked Questions (FAQ)

Q: Can the FQPF9N90CT directly replace the FQPF6N90C without circuit modification?

A: The FQPF9N90CT is electrically compatible as a direct substitute. Both devices share identical voltage ratings (900V Vdss), gate threshold voltage (5V @ 250µA), maximum gate voltage (±30V), and operating temperature range (-55°C to 150°C). The TO-220F-3 package is identical. The FQPF9N90CT provides superior performance with higher current capacity (8A versus 6A) and lower on-resistance (1.4Ω versus 2.3Ω). No circuit modifications are required; however, thermal design should account for the increased power dissipation capability.

Q: What are the key differences between the TO-220F-3 and TO-220SIS packages?

A: Both packages are through-hole configurations with three leads suitable for TO-220 footprints. The TO-220F-3 (used by FQPF6N90C and FQPF9N90CT) and TO-220SIS (used by 2SK3565) differ in mechanical dimensions and thermal characteristics. PCB layout compatibility must be verified before substitution. Consult device datasheets for precise pin configuration and mounting hole specifications.

Q: Is the STP6NK90ZFP suitable for applications requiring 56W power dissipation?

A: The STP6NK90ZFP is rated for 30W maximum power dissipation, which is below the FQPF6N90C specification (56W). This device is suitable only for applications where actual power dissipation remains below 30W. Thermal analysis of the specific application is required to determine if this substitute meets power handling requirements.

Q: Do all substitute parts maintain RoHS and REACH compliance?

A: Yes. The FQPF9N90CT and STP6NK90ZFP are ROHS3 compliant and REACH unaffected. The 2SK3565(Q,M) is RoHS compliant. All devices meet environmental regulatory requirements for commercial applications.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects switching speed and driver circuit requirements. The FQPF6N90C specifies 40nC @ 10V. The FQPF9N90CT (58nC) and STP6NK90ZFP (60.5nC) require higher gate charge, potentially increasing switching losses and driver power consumption. The 2SK3565(Q,M) (28nC) requires lower gate charge, reducing driver demands. Gate driver circuits must be verified for compatibility with the selected device's gate charge specification.

Q: Are there inventory considerations for substitute selection?

A: Inventory availability is provided for reference only and does not constitute a selection criterion. The FQPF9N90CT (2200 pcs), STP6NK90ZFP (16154 pcs), and 2SK3565(Q,M) (823 pcs) are all active products with documented stock levels. Long-term availability is supported by active product status for all three substitutes.

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