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FQPF6N40C N-Channel MOSFET 400V 6A Equivalent & Substitute Parts
Part Overview
The FQPF6N40C is an N-Channel MOSFET manufactured by onsemi, rated for 400V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and is part of the QFET® series. The FQPF6N40C is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity.
Substitution becomes necessary when the original part reaches end-of-life status or when inventory becomes unavailable. Equivalent parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, gate threshold voltage, and thermal characteristics, while accommodating the Through Hole mounting requirement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 400 | V |
| Continuous Drain Current (Id) @ 25°C | 6 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | V |
| Rds On (Max) @ Id, Vgs | 1 | Ohm @ 3A, 10V |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 20 | nC @ 10V |
| Maximum Gate Voltage (Vgs) | ±30 | V |
| Input Capacitance (Ciss) @ Vds | 625 | pF @ 25V |
| Power Dissipation (Max) | 38 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package Type | TO-220-3 Full Pack | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the FQPF6N40C is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 400V
- Continuous Drain Current (Id): Must equal or exceed 6A at 25°C
- Gate Threshold Voltage (Vgs(th)): Must be compatible within ±30V maximum gate voltage specification
- Mounting Type: Must be Through Hole configuration
- Package Type: Must be TO-220 series (TO-220F-3, TO-220FP, or TO-220SIS acceptable)
- Operating Temperature Range: Must encompass -55°C to 150°C
Secondary Compatibility Parameters:
- Rds On (Max): Lower values indicate improved performance; values at or below 1Ohm are preferred
- Gate Charge (Qg): Lower values reduce switching losses; 20nC baseline
- Input Capacitance (Ciss): Lower values improve switching speed; 625pF baseline
- Power Dissipation: Thermal capability of 38W or greater ensures thermal compatibility
The substitute parts listed below satisfy all primary criteria and maintain electrical compatibility within the specified operating envelope.
Parameter Comparison
| Parameter | FQPF6N40C (onsemi) | STP11NK40ZFP (STMicroelectronics) | TK7A50D(STA4,Q,M) (Toshiba) |
|---|---|---|---|
| Drain to Source Voltage (Vdss) | 400V | 400V | 500V |
| Continuous Drain Current (Id) @ 25°C | 6A (Tc) | 9A (Tc) | 7A (Ta) |
| Drive Voltage (Max Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3A, 10V | 550mOhm @ 4.5A, 10V | 1.22Ohm @ 3.5A, 10V |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4V @ 250µA | 4.5V @ 100µA | 4.4V @ 1mA |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V | 32nC @ 10V | 12nC @ 10V |
| Maximum Gate Voltage (Vgs) | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) @ Vds | 625pF @ 25V | 930pF @ 25V | 600pF @ 25V |
| Power Dissipation (Max) | 38W (Tc) | 30W (Tc) | 35W (Tc) |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package Type | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
STP11NK40ZFP (STMicroelectronics)
The STP11NK40ZFP is an active product with identical 400V Vdss rating and exceeds the 6A current requirement at 9A continuous drain current. This part maintains full electrical compatibility with the FQPF6N40C across all critical parameters. The STP11NK40ZFP features improved on-resistance performance at 550mOhm compared to the original 1Ohm specification, resulting in reduced power dissipation during operation. The device is RoHS3 compliant and carries REACH Unaffected status. With 29,068 units in stock, this part offers immediate procurement availability and represents the primary substitute for direct replacement applications.
TK7A50D(STA4,Q,M) (Toshiba Semiconductor and Storage)
The TK7A50D(STA4,Q,M) is an active product with a higher 500V Vdss rating, exceeding the 400V requirement by 100V. This part delivers 7A continuous drain current, surpassing the 6A baseline. The device exhibits superior gate charge performance at 12nC compared to the original 20nC, enabling faster switching characteristics. The TK7A50D(STA4,Q,M) is RoHS3 compliant and carries REACH Unaffected status. With 1,054 units in stock, this part is suitable for applications requiring enhanced voltage margin or improved switching performance. The higher voltage rating accommodates circuit designs with transient overvoltage conditions.
Both substitute parts maintain Through Hole mounting in TO-220 package configurations, ensuring mechanical compatibility with existing PCB layouts. Selection between these substitutes depends on application-specific requirements for current capacity, voltage margin, and switching performance.
Frequently Asked Questions (FAQ)
Q: Can the STP11NK40ZFP directly replace the FQPF6N40C without circuit modification?
A: Yes. The STP11NK40ZFP maintains identical 400V Vdss and exceeds the 6A current requirement at 9A. All gate voltage specifications, operating temperature range, and package configuration are compatible. The improved on-resistance (550mOhm vs. 1Ohm) results in lower power dissipation, which is beneficial for thermal management.
Q: What is the primary advantage of the TK7A50D(STA4,Q,M) over the STP11NK40ZFP?
A: The TK7A50D(STA4,Q,M) provides a 500V Vdss rating compared to 400V, offering 100V additional voltage margin. This higher rating accommodates circuits with transient overvoltage conditions. Additionally, the gate charge is lower at 12nC, enabling faster switching transitions compared to the STP11NK40ZFP at 32nC.
Q: Are there package compatibility concerns when substituting these parts?
A: All three parts use TO-220 series Through Hole packages (TO-220F-3, TO-220FP
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