FQPF6N15 Equivalent & Substitute Parts

Part Overview

The FQPF6N15 is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with 5A continuous drain current in a Through Hole TO-220F-3 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 175°C and dissipates up to 38W under thermal conditions.

Substiute Parts

FQPF6N15

onsemiIn Stock: 847FQPF6N15 Datasheet

Current PartRFQ

RCX080N25

Rohm SemiconductorIn Stock: 7926RCX080N25 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQPF6N15 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: Must be N-Channel MOSFET
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 150V
• Continuous Drain Current (Id): Substitute must equal or exceed 5A at 25°C
• Drive Voltage: Substitute must support 10V gate drive
• On-State Resistance (Rds On): Substitute must not exceed 600 mOhm at specified conditions
• Gate Threshold Voltage (Vgs(th)): Substitute must be compatible with 4V threshold
• Maximum Gate Voltage (Vgs): Substitute must support ±25V or greater
• Operating Temperature: Substitute must support -55°C to 175°C range

Mechanical Compatibility Criteria:

• Mounting Type: Must be Through Hole
• Package: Must be TO-220-3 or compatible footprint variant
• Technology: Must be MOSFET (Metal Oxide)

The RCX080N25 from Rohm Semiconductor meets these substitution criteria with enhanced electrical ratings and active product status.

Parameter Comparison

Engineering Selection Recommendations

The RCX080N25 serves as a direct substitute for the FQPF6N15 based on the following engineering factors:

Product Status: The FQPF6N15 is classified as obsolete, whereas the RCX080N25 is actively manufactured by Rohm Semiconductor. Active production status ensures long-term availability and supply chain continuity.

Electrical Performance: The RCX080N25 provides enhanced electrical ratings across all critical parameters. Drain-to-source voltage is increased from 150V to 250V, and continuous drain current is increased from 5A to 8A. On-state resistance remains equivalent at 600 mOhm under specified conditions. These enhancements provide design margin without requiring circuit modification.

Compliance and Certifications: Both parts carry identical REACH and ECCN classifications (REACH Unaffected, EAR99). The RCX080N25 is RoHS3 compliant. Both parts maintain Moisture Sensitivity Level 1 (Unlimited).

Package Compatibility: Both devices use Through Hole TO-220-3 packaging, ensuring mechanical and thermal interface compatibility with existing PCB designs.

Temperature Consideration: The RCX080N25 maximum junction temperature is 150°C, compared to 175°C for the FQPF6N15. Applications requiring sustained operation above 150°C require thermal analysis to confirm the substitute remains within acceptable operating limits.

Frequently Asked Questions (FAQ)

Q: Can the RCX080N25 directly replace the FQPF6N15 without circuit modification?

A: Yes. The RCX080N25 is electrically and mechanically compatible with the FQPF6N15. Both devices are N-Channel MOSFETs in TO-220-3 packages with equivalent on-state resistance at 10V gate drive. The substitute provides enhanced voltage and current ratings, which do not require circuit changes.

Q: What is the significance of the higher gate charge (Qg) in the RCX080N25?

A: The RCX080N25 has a gate charge of 15 nC compared to 8.5 nC in the FQPF6N15. Higher gate charge requires slightly more energy to switch the device but does not prevent substitution. Gate drive circuits with adequate current capacity accommodate this difference without modification.

Q: Why is the operating temperature range different between the two parts?

A: The FQPF6N15 supports -55°C to 175°C junction temperature, while the RCX080N25 supports up to 150°C. For applications operating near or above 150°C, thermal analysis is required to confirm the substitute remains within acceptable limits. Most industrial and consumer applications operate well below 150°C and are unaffected by this difference.

Q: Are the TO-220-3 packages identical between onsemi and Rohm?

A: Both parts use TO-220-3 Through Hole packages with identical mechanical footprints and thermal interface characteristics. PCB layouts and heatsink mounting are directly compatible.

Q: What is the impact of higher input capacitance (Ciss) in the RCX080N25?

A: The RCX080N25 has input capacitance of 840 pF compared to 270 pF in the FQPF6N15. Higher input capacitance increases gate charge and switching losses slightly but does not prevent substitution. Gate drive circuits designed for the FQPF6N15 accommodate this difference in most applications.

Q: Is the RCX080N25 available in the same packaging options as the FQPF6N15?

A: The RCX080N25 is supplied in Bulk packaging, while the FQPF6N15 was supplied in standard packaging. Both use identical TO-220-3 component packages. Packaging format does not affect electrical or mechanical compatibility.

Q: What compliance certifications apply to the RCX080N25?

A: The RCX080N25 is RoHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes. These certifications match or exceed those of the FQPF6N15, ensuring regulatory compliance in equivalent applications.