FQPF65N06 Equivalent & Substitute Parts

Part Overview

The FQPF65N06 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 40A continuous drain current in a Through Hole TO-220F-3 package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The FQPF65N06 belongs to the QFET® series and is ROHS3 Compliant. Due to its obsolete status, alternative N-Channel MOSFETs with compatible electrical and mechanical specifications are required to maintain design continuity and ensure component availability.

Substiute Parts

FQPF65N06

onsemiIn Stock: 35544FQPF65N06 Datasheet

Current PartRFQ

FDPF55N06

Fairchild SemiconductorIn Stock: 15631FDPF55N06 Datasheet

MFR RecommendedRFQ

AOTF2618L

Alpha & Omega Semiconductor Inc.In Stock: 1746AOTF2618L Datasheet

SimilarRFQ

IRFIZ48GPBF

Vishay SiliconixIn Stock: 2255IRFIZ48GPBF Datasheet

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STP55NF06FP

STMicroelectronicsIn Stock: 10174STP55NF06FP Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQPF65N06 is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss): Must equal or exceed 60V
• Current - Continuous Drain (Id): Must meet or exceed 40A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V @ 250µA specification
• Maximum Gate Voltage (Vgs): Must support ±25V or greater
• Rds On: Must not exceed specified maximum values at rated conditions

Mechanical Compatibility Requirements:

• Mounting Type: Through Hole only
• Package / Case: TO-220-3 Full Pack or compatible TO-220 variants
• FET Type: N-Channel only
• Technology: MOSFET (Metal Oxide) only

Compliance Requirements:

• ROHS3 Compliant status preferred for regulatory alignment
• Operating Temperature Range: Must support -55°C to 175°C or equivalent

The substitute parts listed below meet these criteria and are suitable for direct replacement in applications requiring the FQPF65N06 electrical and mechanical specifications.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FDPF55N06 (Fairchild Semiconductor)

The FDPF55N06 is the manufacturer-recommended substitute. It provides 55A continuous drain current, exceeding the FQPF65N06 specification of 40A. The device maintains 60V Vdss rating and is housed in the identical TO-220F-3 package. The FDPF55N06 is Active in product status, ensuring long-term availability. Operating temperature range extends to 150°C, which is lower than the FQPF65N06 (175°C), requiring verification for applications requiring the full temperature range.

Secondary Substitute: STP55NF06FP (STMicroelectronics)

The STP55NF06FP is an Active product offering 50A continuous drain current in the TO-220FP package. It maintains 60V Vdss and is ROHS3 Compliant. Operating temperature range matches the FQPF65N06 at -55°C to 175°C. Gate charge is 60nC, closely aligned with the original 65nC specification. Power dissipation is rated at 30W (Tc), lower than the FQPF65N06 (56W), which may require thermal design review for high-power applications.

Tertiary Substitute: IRFIZ48GPBF (Vishay Siliconix)

The IRFIZ48GPBF is an Active product rated for 37A continuous drain current, which is below the FQPF65N06 specification of 40A. This device is suitable only for applications where the 37A rating is acceptable. The TO-220-3 package includes an isolated tab variant. Operating temperature range extends to 175°C, matching the original device. Gate charge is 110nC, significantly higher than the FQPF65N06 (65nC), which may impact switching speed in gate-drive-limited circuits.

Lower-Current Alternative: AOTF2618L (Alpha & Omega Semiconductor)

The AOTF2618L is rated for 22A continuous drain current (Tc), substantially below the FQPF65N06 specification of 40A. This device is suitable only for applications with reduced current requirements. Operating temperature range extends to 175°C. Gate charge is 20nC, the lowest among all listed substitutes, providing faster switching characteristics. Power dissipation is 23.5W (Tc), the lowest among all options.

Compliance and Availability:

All substitute parts are ROHS3 Compliant and REACH Unaffected. FDPF55N06, STP55NF06FP, and IRFIZ48GPBF are currently in Active product status with substantial inventory availability. The AOTF2618L is also Active but with lower inventory levels. Selection should prioritize Active products to ensure long-term supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the FDPF55N06 directly replace the FQPF65N06 in all applications?

A: The FDPF55N06 meets or exceeds all critical electrical parameters (Vdss, Id, Vgs(th), Vgs Max) and uses the identical TO-220F-3 package. However, the maximum operating temperature is 150°C versus 175°C for the FQPF65N06. Applications requiring operation above 150°C require alternative substitutes such as STP55NF06FP or IRFIZ48GPBF.

Q: What is the significance of the Rds On specification in selecting a substitute?

A: Rds On (on-state resistance) directly affects power dissipation and heat generation. The FQPF65N06 specifies 16mOhm @ 20A, 10V. Substitute parts with higher Rds On values (such as FDPF55N06 at 22mOhm) will generate more heat at the same current levels. Thermal design must account for this difference in high-current or continuous-duty applications.

Q: Why does the IRFIZ48GPBF have a higher gate charge (110nC) compared to the FQPF65N06 (65nC)?

A: Gate charge is related to the internal capacitance and switching characteristics of the MOSFET. Higher gate charge requires more energy from the gate driver to switch the device. In gate-drive-limited circuits, this may result in slower switching speeds or increased driver power consumption. Applications with marginal gate drive capability should prioritize substitutes with lower gate charge values.

Q: Is the AOTF2618L suitable as a substitute for the FQPF65N06?

A: The AOTF2618L is rated for only 22A continuous drain current, which is 55% below the FQPF65N06 specification of 40A. This device is suitable only for applications where the actual current requirement does not exceed 22A. It is not a general-purpose substitute for the FQPF65N06 in full-specification applications.

Q: What is the difference between TO-220F-3 and TO-220FP packaging?

A: Both are Through Hole TO-220 variants with three leads. TO-220F-3 and TO-220FP are mechanically compatible for PCB mounting. The primary difference lies in internal lead frame design and thermal characteristics. Consult device datasheets for specific thermal performance metrics if thermal management is critical.

Q: Can I use the STP55NF06FP in applications requiring the full -55°C to 175°C temperature range?

A: Yes. The STP55NF06FP operating temperature range is -55°C to 175°C, matching the FQPF65N06 specification. This makes it suitable for applications requiring the full temperature range, unlike the FDPF55N06 which is limited to 150°C maximum.

Q: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance affects gate charge requirements and switching speed. Higher Ciss values require more gate charge to achieve the same switching speed. The FQPF65N06 specifies 2410pF @ 25V. Substitutes with lower Ciss values (such as STP55NF06FP at 1300pF) may switch faster with the same gate drive, while those with similar or higher values maintain comparable switching characteristics.

Q: Are all listed substitutes ROHS3 Compliant?

A: Yes. All substitute parts listed (FDPF55N06, STP55NF06FP, IRFIZ48GPBF, and AOTF2618L) are ROHS3 Compliant, meeting regulatory requirements for hazardous substance restrictions.

Q: What should I consider when selecting between multiple substitute options?

A: Selection criteria include: (1) Current rating relative to application requirements; (2) Operating temperature range compatibility; (3) Rds On and power dissipation for thermal design; (4) Gate charge for gate driver compatibility; (5) Product status and inventory availability; (6) Package variant compatibility with existing PCB designs.