FQPF630 N-Channel MOSFET 200V 6.3A TO-220F Equivalent & Substitute Parts

Part Overview

The FQPF630 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage and 6.3A continuous drain current in a Through Hole TO-220F-3 package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The FQPF630 operates across a temperature range of -55°C to 150°C and dissipates up to 38W at the case temperature, suitable for general-purpose switching and amplification applications requiring moderate voltage and current ratings.

Substiute Parts

FQPF630

onsemiIn Stock: 2984FQPF630 Datasheet

Current PartRFQ

RCX080N25

Rohm SemiconductorIn Stock: 7926RCX080N25 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQPF630 is determined by electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Parameters:

• Drain-to-Source Voltage (Vdss) must equal or exceed 200V
• Continuous Drain Current (Id) must equal or exceed 6.3A
• On-State Drain Resistance (Rds On) must not exceed the original specification to maintain switching efficiency
• Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
• Operating temperature range must support the application environment

Mechanical Compatibility Parameters:

• Package type must be Through Hole TO-220 format to ensure PCB mounting compatibility
• Pin configuration must match TO-220-3 standard

The RCX080N25 from Rohm Semiconductor meets these substitution criteria with equal or superior electrical ratings and identical mechanical packaging, enabling direct functional replacement in circuit designs originally specified for the FQPF630.

Parameter Comparison

Engineering Selection Recommendations

The RCX080N25 is a suitable substitute for the FQPF630 based on the following engineering criteria:

Electrical Superiority: The RCX080N25 provides higher voltage rating (250V vs. 200V) and higher current rating (8A vs. 6.3A), ensuring operation within safe margins for applications originally designed for the FQPF630. The lower gate charge (15nC vs. 25nC) reduces driver circuit loading.

Compliance and Certification: Both devices maintain ROHS3 compliance and REACH unaffected status, meeting regulatory requirements for electronic component procurement. The RCX080N25 carries an active product status from Rohm Semiconductor, ensuring long-term availability and manufacturing support.

Mechanical Compatibility: Identical TO-220-3 Through Hole packaging enables direct PCB mounting without layout modifications or mechanical redesign.

Thermal Considerations: The RCX080N25 supports the same maximum junction temperature (150°C) as the FQPF630, maintaining thermal design compatibility. Power dissipation ratings are comparable (35W vs. 38W at case temperature).

Trade-offs: The RCX080N25 exhibits higher on-state drain resistance (600mOhm vs. 400mOhm) and higher input capacitance (840pF vs. 550pF), which may result in slightly increased conduction losses and gate drive requirements. These differences are within acceptable engineering tolerances for general-purpose switching applications.

Frequently Asked Questions (FAQ)

Q: Can the RCX080N25 directly replace the FQPF630 without circuit modifications?

A: Yes. The RCX080N25 is mechanically and electrically compatible with the FQPF630. Both devices use identical TO-220-3 Through Hole packaging and share compatible gate drive voltage requirements (10V). The RCX080N25 provides superior voltage and current ratings, making it suitable for direct substitution in existing circuit designs.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are: (1) Drain-to-Source Voltage: RCX080N25 rated for 250V versus FQPF630 at 200V; (2) Continuous Drain Current: RCX080N25 rated for 8A versus FQPF630 at 6.3A; (3) On-State Drain Resistance: RCX080N25 at 600mOhm versus FQPF630 at 400mOhm; (4) Gate Charge: RCX080N25 at 15nC versus FQPF630 at 25nC; (5) Product Status: RCX080N25 is active while FQPF630 is obsolete.

Q: Will the higher on-state resistance of the RCX080N25 affect circuit performance?

A: The RCX080N25 exhibits 200mOhm higher on-state resistance (600mOhm vs. 400mOhm). In applications where the FQPF630 operates at or below 3.15A, this difference results in proportionally higher conduction losses. For applications operating at lower current levels, the impact is minimal. Thermal analysis of the specific application is recommended to confirm acceptable power dissipation.

Q: Are both devices RoHS compliant?

A: Yes. Both the FQPF630 and RCX080N25 are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component procurement and use in regulated markets.

Q: What is the significance of the FQPF630 being obsolete?

A: Obsolete status indicates that onsemi has discontinued manufacturing and support for the FQPF630. Substitution with an active product such as the RCX080N25 ensures access to current manufacturing, technical support, and long-term supply chain stability for new designs and ongoing production requirements.

Q: How do the gate charge specifications affect gate driver selection?

A: The RCX080N25 requires lower gate charge (15nC vs. 25nC), reducing the energy and current demands on the gate driver circuit. Existing gate drivers specified for the FQPF630 will operate with reduced stress when driving the RCX080N25, potentially improving driver reliability and reducing power consumption in the gate drive circuit.

Q: Are there any temperature range limitations when substituting?

A: The FQPF630 specifies a temperature range of -55°C to 150°C, while the RCX080N25 specifies a maximum junction temperature of 150°C. For applications requiring operation below -55°C, the RCX080N25 may not be suitable. For standard industrial and commercial temperature ranges, both devices are compatible.