FQPF3N60 N-Channel 600V 2A MOSFET Equivalent & Substitute Parts

Part Overview

The FQPF3N60 is an N-Channel 600V 2A MOSFET manufactured by onsemi in the QFET® series, housed in a TO-220F-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The part delivers 34W maximum power dissipation and operates across a temperature range of -55°C to 150°C. Substitution is required due to product discontinuation while maintaining electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	2	A
Rds On (Max) @ 1A, 10V	3.6	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	13	nC
Input Capacitance (Ciss) @ 25V	450	pF
Power Dissipation (Max)	34	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
Gate Voltage (Max)	±30	V

Substitute Part Grouping Explanation

Substitution of the FQPF3N60 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 2A or greater at 25°C
Gate Threshold Voltage (Vgs(th)): Compatible with 10V drive voltage
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET technology
Gate Voltage Rating (Vgs Max): ±30V

Secondary Compatibility Parameters:

Rds On (Max): Must not exceed application requirements
Gate Charge (Qg): Lower values indicate improved switching performance
Input Capacitance (Ciss): Affects gate drive requirements
Operating Temperature Range: Must support -55°C to 150°C minimum
Power Dissipation: Thermal management capability

Substitute parts are grouped based on voltage class (600V or higher) and current rating (2A or higher). Parts meeting these criteria with compatible package and electrical specifications are considered functionally equivalent for direct replacement applications.

Parameter Comparison

Parameter	FQPF3N60	STF2HNK60Z	STF2N62K3	STF3N62K3	STF3N80K5	STP3NK60ZFP	Unit
Manufacturer	onsemi	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	—
Product Status	Obsolete	Active	Active	Active	Active	Not For New Designs	—
Vdss	600	600	620	620	800	600	V
Id @ 25°C	2	2	2.2	2.7	2.5	2.4	A
Rds On (Max) @ 10V	3.6	4.8	3.6	2.5	3.5	3.6	Ohm
Vgs(th) (Max)	5	4.5	4.5	4.5	5	4.5	V
Gate Charge (Qg) @ 10V	13	15	15	13	9.5	11.8	nC
Ciss @ 25V	450	280	340	385	130	311	pF
Power Dissipation (Max)	34	20	20	20	20	20	W
Operating Temperature	-55 to 150	-55 to 150	to 150	to 150	-55 to 150	-55 to 150	°C
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
Vgs (Max)	±30	±30	±30	±30	±30	±30	V
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

For Direct Replacement (Obsolete Part Substitution):

STF2HNK60Z and STP3NK60ZFP are the primary candidates for direct replacement of the FQPF3N60. Both maintain the 600V voltage rating and 2A+ current capability with TO-220-3 package compatibility. STF2HNK60Z is recommended as the preferred substitute due to active product status and full compliance with ROHS3 standards. STP3NK60ZFP remains available but carries "Not For New Designs" status, limiting its suitability for new production.

For Enhanced Performance Applications:

STF3N62K3 and STF2N62K3 offer improved current ratings (2.7A and 2.2A respectively) with equivalent 620V voltage ratings. These parts provide superior Rds On characteristics and are actively supported by STMicroelectronics. STF3N62K3 delivers the lowest Rds On value (2.5 Ohm) among 600V-class substitutes, enabling reduced conduction losses.

For Higher Voltage Applications:

STF3N80K5 operates at 800V with 2.5A continuous current, suitable for applications requiring elevated voltage margins. This part exhibits significantly lower input capacitance (130 pF) and gate charge (9.5 nC), improving switching efficiency. Active product status and full temperature range support (-55°C to 150°C) ensure long-term availability.

Compliance Considerations:

All STMicroelectronics substitute parts comply with ROHS3 standards and carry REACH Unaffected status. The FQPF3N60 carries no specified RoHS compliance documentation. Substitution to ROHS3-compliant parts is required for applications subject to environmental regulations.

Power Dissipation Trade-off:

The FQPF3N60 specifies 34W maximum power dissipation, while all substitute parts are rated at 20W. Applications requiring thermal dissipation exceeding 20W must implement enhanced cooling or select alternative device families. Verify thermal management capability before substitution in high-power applications.

Frequently Asked Questions (FAQ)

Q: Can STF2HNK60Z directly replace FQPF3N60 without circuit modification?

A: STF2HNK60Z maintains electrical compatibility across all critical parameters: 600V Vdss, 2A continuous current, ±30V gate voltage, and TO-220-3 package. Pin configuration and functional characteristics are identical. However, power dissipation is reduced from 34W to 20W; verify thermal requirements are met at 20W maximum.

Q: What is the difference between STF3N62K3 and STF2N62K3?

A: Both parts operate at 620V with SuperMESH3™ technology. STF3N62K3 delivers 2.7A continuous current versus 2.2A for STF2N62K3, with superior Rds On performance (2.5 Ohm vs 3.6 Ohm). STF3N62K3 is preferred for applications requiring lower conduction losses and higher current capacity.

Q: Why does STF3N80K5 have lower gate charge than other substitutes?

A: STF3N80K5 operates at 800V using SuperMESH5™ technology, which employs different die architecture optimized for higher voltage operation. Lower gate charge (9.5 nC) and input capacitance (130 pF) result from this design approach, enabling faster switching at the cost of higher voltage rating.

Q: Is STP3NK60ZFP suitable for new production designs?

A: STP3NK60ZFP carries "Not For New Designs" status from STMicroelectronics. While electrically compatible with FQPF3N60, this designation indicates the manufacturer does not recommend its use in new applications. STF2HNK60Z is the preferred active alternative.

Q: What thermal management changes are required when substituting to 20W-rated parts?

A: The FQPF3N60 is rated for 34W dissipation; substitute parts are limited to 20W. Applications operating near the original 34W specification must either reduce operating power, increase heatsink surface area, or improve airflow to maintain junction temperatures within -55°C to 150°C operating range.

Q: Are all substitute parts ROHS3 compliant?

A: All STMicroelectronics substitute parts (STF2HNK60Z, STF2N62K3, STF3N62K3, STF3N80K5, STP3NK60ZFP) are ROHS3 compliant. The original FQPF3N60 specifies no RoHS compliance status. Substitution to ROHS3-compliant parts is required for applications subject to environmental regulations.

Q: Can STF3N80K5 be used in 600V circuits?

A: STF3N80K5 is rated for 800V operation and can be used in 600V circuits. The higher voltage rating provides additional safety margin. However, verify that gate drive circuitry and control logic are compatible with the part's electrical characteristics, particularly lower input capacitance (130 pF vs 450 pF for FQPF3N60).

Q: What is the inventory status of substitute parts?

A: STF3N80K5 has the highest inventory (23,682 pcs), followed by STF2HNK60Z (15,226 pcs) and STP3NK60ZFP (15,365 pcs). STF3N62K3 has limited availability (1,501 pcs). Verify current stock levels with suppliers before design finalization.

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