FQPF2N60C Equivalent & Substitute Parts

Part Overview

The FQPF2N60C is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 2A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The FQPF2N60C is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220 package format.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	2	A
On-State Resistance (Rds On) @ 1A, 10V	4.7	Ω
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	12	nC
Input Capacitance (Ciss) @ 25V	235	pF
Power Dissipation (Max)	23	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitute parts for the FQPF2N60C are selected based on the following critical parameters that determine functional equivalence:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Minimum 600V
Continuous Drain Current (Id): Minimum 2A at 25°C
Package Type: TO-220 through-hole configuration
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor

Secondary Compatibility Criteria:

Gate-Source Threshold Voltage (Vgs(th)): Within ±0.5V of specified value
On-State Resistance (Rds On): Lower or equivalent values acceptable
Gate Charge (Qg): Values within ±3nC acceptable
Input Capacitance (Ciss): Values within ±50pF acceptable
Operating Temperature Range: Minimum -55°C to 150°C

All substitute parts listed meet or exceed the primary compatibility criteria. Devices with higher voltage ratings (620V) and higher current ratings (2.2A to 2.7A) are acceptable as they provide enhanced performance margins for the same application space.

Parameter Comparison

Parameter	FQPF2N60C (onsemi)	STF2HNK60Z (STMicroelectronics)	STF2LN60K3 (STMicroelectronics)	STF2N62K3 (STMicroelectronics)	STF3N62K3 (STMicroelectronics)
Vdss (V)	600	600	600	620	620
Id @ 25°C (A)	2	2	2	2.2	2.7
Rds On @ 1A, 10V (Ω)	4.7	4.8	4.5	3.6	2.5
Vgs(th) @ Id (V)	4 @ 250µA	4.5 @ 50µA	4.5 @ 50µA	4.5 @ 50µA	4.5 @ 50µA
Qg @ 10V (nC)	12	15	12	15	13
Ciss @ Vds (pF)	235 @ 25V	280 @ 25V	235 @ 50V	340 @ 50V	385 @ 25V
Power Dissipation (W)	23	20	20	20	20
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

STF2HNK60Z (STMicroelectronics)

This device provides direct electrical equivalence to the FQPF2N60C with identical 600V/2A ratings. The STF2HNK60Z maintains the same gate charge specification (15nC versus 12nC represents a 3nC variance within acceptable tolerance). This part is actively manufactured and carries ROHS3 compliance certification. The slightly higher input capacitance (280pF versus 235pF) has minimal impact on switching performance in most applications. Inventory availability is 15,226 units.

STF2LN60K3 (STMicroelectronics)

This device matches the FQPF2N60C in voltage and current ratings with improved on-state resistance (4.5Ω versus 4.7Ω), resulting in lower conduction losses. Gate charge remains at 12nC, identical to the original part. The STF2LN60K3 is actively manufactured with ROHS3 compliance. Input capacitance specification is measured at 50V rather than 25V, which does not affect substitution validity. Inventory availability is 15,326 units.

STF2N62K3 (STMicroelectronics)

This device provides enhanced performance with 620V voltage rating and 2.2A current rating, both exceeding the FQPF2N60C specifications. On-state resistance is significantly improved at 3.6Ω. The higher voltage and current ratings provide design margin for applications requiring the original 600V/2A specification. This part is actively manufactured with ROHS3 compliance. Inventory availability is 15,500 units.

STF3N62K3 (STMicroelectronics)

This device offers the highest performance upgrade with 620V voltage rating and 2.7A current rating. On-state resistance is substantially reduced to 2.5Ω, providing the lowest conduction losses among all substitutes. This part is actively manufactured with ROHS3 compliance. Limited inventory availability of 1,501 units should be considered for long-term supply planning. The higher current rating accommodates applications requiring increased current capacity beyond the original 2A specification.

All substitute parts are manufactured by STMicroelectronics, an established semiconductor supplier with active product status. All devices maintain through-hole TO-220-3 package compatibility and operate across the -55°C to 150°C temperature range. Selection among these substitutes depends on specific application requirements for voltage margin, current capacity, and conduction loss optimization.

Frequently Asked Questions (FAQ)

Q: Can the STF2HNK60Z directly replace the FQPF2N60C without circuit modifications?

A: Yes. The STF2HNK60Z maintains identical voltage (600V) and current (2A) ratings with compatible gate charge and threshold voltage specifications. The TO-220-3 package pinout is identical, allowing direct pin-for-pin substitution. No circuit modifications are required.

Q: What is the significance of the higher voltage ratings (620V) in the STF2N62K3 and STF3N62K3?

A: The 620V rating provides a 20V design margin above the original 600V specification. This margin accommodates voltage transients and overshoot conditions in switching applications. Devices rated for higher voltages are electrically compatible with 600V applications and do not require circuit changes.

Q: How do the on-state resistance differences affect application performance?

A: Lower on-state resistance (Rds On) reduces conduction losses and heat generation. The STF3N62K3 at 2.5Ω dissipates less power than the original FQPF2N60C at 4.7Ω. For applications with continuous current operation, lower Rds On improves thermal performance and efficiency. For switching applications with brief conduction periods, the difference is less significant.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification, matching the compliance status of the original FQPF2N60C. All devices are REACH unaffected and classified under ECCN EAR99.

Q: What is the impact of different gate charge specifications?

A: Gate charge (Qg) affects switching speed and gate drive requirements. The FQPF2N60C specifies 12nC, while STF2HNK60Z and STF2N62K3 specify 15nC. The 3nC difference represents approximately 25% higher gate charge. This requires slightly more gate drive current but does not prevent substitution. Gate drive circuits designed for the original part accommodate this variance.

Q: Can I use the STF3N62K3 in a design originally specified for the FQPF2N60C?

A: Yes. The STF3N62K3 exceeds all electrical specifications of the FQPF2N60C (620V versus 600V, 2.7A versus 2A, 2.5Ω versus 4.7Ω). The higher performance characteristics make it suitable for the same application space. The TO-220-3 package is identical. No circuit modifications are required.

Q: What packaging format do all these devices use?

A: All devices use the TO-220-3 through-hole package format. This ensures mechanical and electrical compatibility with PCB layouts designed for the FQPF2N60C. Pin assignments are identical across all listed parts.

Q: Why is the FQPF2N60C classified as obsolete?

A: Obsolescence indicates that onsemi has discontinued manufacturing this device. Substitute parts from active manufacturers (STMicroelectronics) provide equivalent or superior functionality for ongoing production and new designs. The listed substitutes ensure design continuity and supply chain reliability.

Q: Are there inventory considerations when selecting a substitute?

A: Yes. STF2HNK60Z, STF2LN60K3, and STF2N62K3 each have inventory levels exceeding 15,000 units. The STF3N62K3 has limited inventory at 1,501 units. For high-volume production, the higher-inventory options provide better supply assurance.

Q: How do input capacitance differences affect circuit design?

A: Input capacitance (Ciss) affects gate drive circuit design and switching transient behavior. The FQPF2N60C specifies 235pF at 25V. Substitutes range from 235pF to 385pF. Higher capacitance requires slightly more gate drive current but does not prevent substitution. Existing gate drive circuits accommodate this variance without modification.

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