FQPF10N60CF N-Channel MOSFET 600V 9A Equivalent & Substitute Parts

Part Overview

The FQPF10N60CF is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage and 9A continuous drain current in a Through Hole TO-220F-3 package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The FQPF10N60CF belongs to the FRFET® series and is designed for applications requiring high-voltage switching with moderate current handling. Substitution is required due to product discontinuation and the need for active alternatives with compatible electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	9	A
RDS(on) Max @ Id, Vgs	800 mOhm @ 4.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) Max @ Id	4	V @ 250µA
Gate Charge (Qg) Max @ Vgs	57	nC @ 10V
Input Capacitance (Ciss) Max @ Vds	2040	pF @ 25V
Power Dissipation Max	50	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the FQPF10N60CF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 9A at 25°C
Mounting Type: Must be Through Hole
Package Type: Must be TO-220 variant (TO-220-3 or TO-220F)
Gate Drive Voltage: Must support 10V operation
Operating Temperature Range: Must encompass -55°C to 150°C

Secondary Compatibility Parameters:

RDS(on) characteristics at specified gate voltage
Gate threshold voltage within acceptable range
Gate charge and input capacitance for circuit design compatibility

Substitute parts are grouped into two categories:

Category A - Direct Substitutes (Vdss = 600V, Id ≥ 9A):

AOTF10N60L (10A, 600V)
AOTF11N60L (11A, 600V)

Category B - Functional Alternatives (Vdss ≥ 600V, Id ≥ 9A):

AOTF11N62L (11A, 620V)
STF7NM60N (5A, 600V) — Lower current rating
STF9N60M2 (5.5A, 600V) — Lower current rating

Parameter Comparison

Parameter	FQPF10N60CF	AOTF10N60L	AOTF11N60L	AOTF11N62L	STF7NM60N	STF9N60M2
Manufacturer	onsemi	Alpha & Omega	Alpha & Omega	Alpha & Omega	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	620	600	600
Id @ 25°C (A)	9	10	11	11	5	5.5
RDS(on) Max (mOhm)	800 @ 4.5A, 10V	750 @ 5A, 10V	650 @ 5.5A, 10V	650 @ 5.5A, 10V	900 @ 2.5A, 10V	780 @ 3A, 10V
Vgs(th) Max (V)	4 @ 250µA	4.5 @ 250µA	4.5 @ 250µA	4.5 @ 250µA	4 @ 250µA	4 @ 250µA
Qg Max (nC)	57 @ 10V	40 @ 10V	37 @ 10V	37 @ 10V	14 @ 10V	10 @ 10V
Ciss Max (pF)	2040 @ 25V	1600 @ 25V	1990 @ 25V	1990 @ 25V	363 @ 50V	320 @ 100V
Power Dissipation Max (W)	50	—	37.9	39	20	20
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-5	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitutes:

AOTF11N60L — This Alpha & Omega Semiconductor device is the preferred substitute for the FQPF10N60CF. It provides 11A continuous drain current at 600V, exceeding the original 9A specification. The device is active in production status with ROHS3 compliance. The RDS(on) of 650 mOhm at 5.5A, 10V is superior to the original 800 mOhm specification. Gate charge is reduced to 37 nC, improving switching performance. Operating temperature range matches the original specification (-55°C to 150°C). TO-220F package is mechanically compatible with TO-220-3 footprints.

AOTF10N60L — This Alpha & Omega Semiconductor device provides 10A continuous drain current at 600V with 750 mOhm RDS(on). It is active in production with ROHS3 compliance. This option is suitable for applications where the current rating margin is less critical than the original specification.

Alternative Substitutes:

AOTF11N62L — This device offers 11A at 620V with improved voltage margin. RDS(on) and gate charge specifications are identical to AOTF11N60L. ROHS3 compliant and active in production. Suitable for applications requiring higher voltage headroom.

STF7NM60N and STF9N60M2 — These STMicroelectronics devices are lower-current alternatives (5A and 5.5A respectively) suitable only for applications where the 9A current requirement can be reduced. Both are ROHS3 compliant and active in production. Gate charge is significantly lower (14 nC and 10 nC), which may benefit high-frequency switching circuits. Package variant is TO-220FP (5-pin) rather than TO-220-3 (3-pin).

Selection Basis:

All recommended substitutes maintain the 600V Vdss rating, Through Hole mounting type, and TO-220 package family. All active substitutes carry ROHS3 compliance and REACH Unaffected status, matching the regulatory profile of the original part. Product status transition from Obsolete to Active ensures long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can AOTF11N60L directly replace FQPF10N60CF in existing designs?

A: Yes. The AOTF11N60L meets or exceeds all critical electrical parameters: 600V Vdss, 11A Id (exceeding the 9A requirement), compatible gate drive voltage, and matching operating temperature range. The TO-220F package is mechanically compatible with TO-220-3 footprints. No circuit modifications are required.

Q: What is the difference between TO-220-3 and TO-220F packages?

A: Both are Through Hole TO-220 variants with three leads (Gate, Drain, Source). TO-220F denotes a full-pack variant. The mechanical footprint and pin spacing are compatible for PCB mounting purposes.

Q: Why are STF7NM60N and STF9N60M2 listed as substitutes if they have lower current ratings?

A: These devices are listed as functional alternatives for applications where the actual operating current is below 9A. They provide the same 600V voltage rating and Through Hole mounting. However, they are not direct substitutes for designs requiring the full 9A capability.

Q: Are there any gate drive considerations when switching from FQPF10N60CF to AOTF11N60L?

A: Both devices operate at 10V gate drive voltage with similar gate threshold voltages (4V vs. 4.5V). The AOTF11N60L has lower gate charge (37 nC vs. 57 nC), which reduces switching losses and may improve circuit efficiency. Existing gate drive circuits designed for the original part are compatible.

Q: What is the significance of lower RDS(on) in substitute parts?

A: Lower RDS(on) reduces conduction losses and heat dissipation during operation. The AOTF11N60L at 650 mOhm provides approximately 19% lower on-state resistance compared to the original 800 mOhm specification, improving thermal performance and efficiency.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed (AOTF10N60L, AOTF11N60L, AOTF11N62L, STF7NM60N, STF9N60M2) carry ROHS3 compliance certification. The original FQPF10N60CF compliance status is not specified in the provided data.

Q: Can AOTF11N62L be used in place of AOTF11N60L?

A: Yes. The AOTF11N62L provides the same 11A current rating with 620V Vdss (20V higher than the 600V requirement). All other electrical parameters are identical. The higher voltage rating provides additional design margin for transient voltage spikes.

Q: What inventory considerations apply to these substitutes?

A: AOTF11N60L has 3,610 units in stock, AOTF10N60L has 1,480 units, and AOTF11N62L has 3,040 units. STF7NM60N has 19,121 units and STF9N60M2 has 4,545 units. Availability varies by distributor and region.

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