FQP9N50C Equivalent & Substitute Parts

Part Overview

The FQP9N50C is an N-Channel 500V 9A MOSFET manufactured by onsemi in a Through Hole TO-220-3 package. This device is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing production and maintenance applications. The FQP9N50C operates across a temperature range of -55°C to 150°C and delivers 135W maximum power dissipation at the case temperature. As an obsolete component, direct replacements or functionally equivalent alternatives are required for system continuity.

Key Parameters

Parameter	FQP9N50C	Unit
FET Type	N-Channel	-
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	9	A
Rds On (Max) @ Id, Vgs	800 mOhm @ 4.5A, 10V	-
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1030	pF @ 25V
Power Dissipation (Max)	135	W
Operating Temperature	-55 to 150	°C
Mounting Type	Through Hole	-
Package / Case	TO-220-3	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the FQP9N50C is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V minimum
Current - Continuous Drain (Id): 9A or greater at 25°C
Gate Drive Voltage: 10V
Vgs (Max): ±30V or greater
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole
Package: TO-220-3 compatible

Secondary Compatibility Parameters:

Rds On (Max): 850 mOhm or lower at rated conditions
Vgs(th) (Max): 4.5V or lower at 250µA
Gate Charge (Qg): 35 nC or lower at 10V
Input Capacitance (Ciss): 1100 pF or lower at 25V

Substitute parts are grouped based on their ability to meet or exceed the primary criteria while maintaining compatibility with the secondary parameters. Parts that meet all primary criteria are classified as direct substitutes. Parts that meet primary criteria but have variations in secondary parameters are classified as functional equivalents with noted trade-offs.

Parameter Comparison

Parameter	FQP9N50C (onsemi)	AOT8N50 (Alpha & Omega)	AOT9N50 (Alpha & Omega)	IRF840LCPBF (Vishay)	STP9NK50Z (STMicroelectronics)
Drain to Source Voltage (Vdss)	500V	500V	500V	500V	500V
Current - Continuous Drain (Id) @ 25°C	9A	8A	9A	8A	7.2A
Rds On (Max) @ Id, Vgs	800 mOhm @ 4.5A, 10V	850 mOhm @ 4A, 10V	850 mOhm @ 4.5A, 10V	850 mOhm @ 4.8A, 10V	850 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4.5V @ 250µA	4.5V @ 250µA	4V @ 250µA	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10V	28 nC @ 10V	28 nC @ 10V	39 nC @ 10V	32 nC @ 10V
Vgs (Max)	±30V	±30V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	1030 pF @ 25V	1042 pF @ 25V	1042 pF @ 25V	1100 pF @ 25V	910 pF @ 25V
Power Dissipation (Max)	135W	192W	192W	125W	110W
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Not For New Designs	Not For New Designs	Active	Active

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

AOT9N50 (Alpha & Omega Semiconductor Inc.) provides the closest electrical match to the FQP9N50C with identical 500V Vdss and 9A continuous drain current ratings. This part meets all primary substitution criteria. However, AOT9N50 carries a "Not For New Designs" product status, limiting its suitability for new development. The part is available in Tube packaging with 3,846 units in stock.

STP9NK50Z (STMicroelectronics) is an Active product offering 500V Vdss with 7.2A continuous drain current. While the current rating is lower than the FQP9N50C, this part meets all primary voltage and temperature criteria. STP9NK50Z features lower input capacitance (910 pF) and gate charge (32 nC) compared to the original part, resulting in improved switching characteristics. This part is available in Tube packaging with 15,942 units in stock and is suitable for new designs.

Secondary Substitutes (Functional Equivalents with Trade-offs):

IRF840LCPBF (Vishay Siliconix) is an Active product rated for 500V Vdss with 8A continuous drain current. This part provides lower power dissipation (125W) than the FQP9N50C but meets all primary electrical criteria. IRF840LCPBF is available in Tube packaging with 23,636 units in stock and is suitable for new designs.

AOT8N50 (Alpha & Omega Semiconductor Inc.) is rated for 500V Vdss with 8A continuous drain current. This part carries a "Not For New Designs" status and is not recommended for new applications. It is available in Tube packaging with 18,780 units in stock.

Not Recommended:

AOT9N40 (Alpha & Omega Semiconductor Inc.) is rated for 400V Vdss, which does not meet the 500V minimum requirement for direct substitution. This part is not suitable as a replacement for the FQP9N50C.

STP8NM50N (STMicroelectronics) is rated for 500V Vdss but with only 5A continuous drain current, which falls significantly below the 9A requirement. This part does not meet primary substitution criteria.

Frequently Asked Questions (FAQ)

Q: Can AOT9N50 be used as a direct replacement for FQP9N50C?

A: AOT9N50 meets all primary electrical and mechanical criteria for substitution, including 500V Vdss, 9A continuous drain current, ±30V Vgs maximum, and TO-220-3 package compatibility. However, AOT9N50 carries a "Not For New Designs" product status. For new applications, STP9NK50Z or IRF840LCPBF are preferred alternatives.

Q: What is the difference between STP9NK50Z and FQP9N50C?

A: STP9NK50Z shares the same 500V Vdss and operating temperature range as FQP9N50C. The primary difference is continuous drain current: STP9NK50Z is rated for 7.2A compared to FQP9N50C's 9A. STP9NK50Z offers lower input capacitance (910 pF vs. 1030 pF) and lower gate charge (32 nC vs. 35 nC), resulting in faster switching performance. STP9NK50Z is an Active product suitable for new designs.

Q: Is IRF840LCPBF suitable for applications requiring 9A continuous current?

A: IRF840LCPBF is rated for 8A continuous drain current at 25°C, which is lower than the FQP9N50C's 9A rating. For applications requiring the full 9A continuous current capability, AOT9N50 or STP9NK50Z are more appropriate selections. IRF840LCPBF is suitable for applications with maximum current requirements of 8A or less.

Q: Why is AOT9N40 not recommended as a substitute?

A: AOT9N40 is rated for 400V Vdss, which does not meet the 500V minimum voltage requirement specified for the FQP9N50C. Using a lower voltage-rated device in a 500V application creates risk of device failure and is not acceptable for direct substitution.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference—AOT8N50, AOT9N50, AOT9N40, IRF840LCPBF, STP8NM50N, and STP9NK50Z—are ROHS3 Compliant, matching the compliance status of the FQP9N50C.

Q: What is the difference between TO-220 and TO-220-3 packaging?

A: TO-220-3 and TO-220 refer to the same three-lead Through Hole package format used for power MOSFETs. All substitute parts listed are compatible with TO-220-3 package specifications and can be used as direct mechanical replacements in existing PCB layouts.

Q: Which substitute part has the lowest on-resistance?

A: STP8NM50N has the lowest on-resistance at 790 mOhm @ 2.5A, 10V. However, STP8NM50N is rated for only 5A continuous drain current and does not meet the primary current requirement for substitution. Among parts meeting the 9A or near-9A current requirement, FQP9N50C and AOT9N50 both specify 800-850 mOhm on-resistance.

Q: Can STP8NM50N be used in lower-current applications?

A: STP8NM50N meets the 500V Vdss requirement and all temperature and voltage specifications. However, it is rated for only 5A continuous drain current. STP8NM50N is suitable only for applications with maximum current requirements of 5A or less and should not be used as a substitute for the FQP9N50C in applications requiring higher current capacity.

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