FQP8P10 Equivalent & Substitute Parts

Part Overview

The FQP8P10 is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 8A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for applications requiring moderate power dissipation up to 65W. The FQP8P10 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

FQP8P10
onsemiIn Stock: 15570FQP8P10 Datasheet
FQP8P10
Current Part
FQP17P10
onsemiIn Stock: 15455FQP17P10 Datasheet
FQP17P10
MFR Recommended
IRF9520NPBF
Infineon TechnologiesIn Stock: 6673IRF9520NPBF Datasheet
IRF9520NPBF
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 8 A
On-State Resistance (Rds On Max) @ 4A, 10V 530 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 V
Power Dissipation (Max) 65 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the FQP8P10 are selected based on the following critical parameters that determine functional compatibility:

Primary Compatibility Criteria:

  • FET Type: P-Channel (required)
  • Drain to Source Voltage (Vdss): 100V (required)
  • Package Type: TO-220-3 or TO-220AB (compatible through-hole packages)
  • Operating Temperature Range: -55°C to 175°C (required)
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA (required)

Secondary Selection Parameters:

  • Continuous Drain Current (Id): Equal to or greater than 8A
  • On-State Resistance (Rds On): Equal to or lower than 530mOhm
  • Power Dissipation: Equal to or greater than 65W

The FQP17P10 is classified as a manufacturer-recommended substitute due to identical voltage ratings, compatible package, and superior current and power handling capabilities. The IRF9520NPBF is classified as a similar substitute, offering comparable voltage and threshold specifications with slightly lower current rating.

Parameter Comparison

Parameter FQP8P10 (Main) FQP17P10 (MFR Recommended) IRF9520NPBF (Similar) Unit
Manufacturer onsemi onsemi Infineon Technologies
FET Type P-Channel P-Channel P-Channel
Drain to Source Voltage (Vdss) 100 100 100 V
Continuous Drain Current (Id) @ 25°C 8 16.5 6.8 A
On-State Resistance (Rds On Max) 530 @ 4A, 10V 190 @ 8.25A, 10V 480 @ 4A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 4 4 V
Gate Charge (Qg Max) @ 10V 15 39 27 nC
Input Capacitance (Ciss Max) @ 25V 470 1100 350 pF
Power Dissipation (Max) 65 100 W
Operating Temperature Range -55 to 175 -55 to 175 -55 to 175 °C
Package Type TO-220-3 TO-220-3 TO-220AB
Product Status Obsolete Active Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

FQP17P10 (onsemi) — Manufacturer-Recommended Substitute

The FQP17P10 is the primary substitute for the FQP8P10. Both devices are manufactured by onsemi and share identical voltage ratings (100V Vdss), gate threshold specifications (4V @ 250µA), and operating temperature range (-55°C to 175°C). The FQP17P10 maintains the same TO-220-3 package configuration, ensuring direct mechanical compatibility. The FQP17P10 is classified as Active product status, providing long-term availability and supply chain stability. Both parts are ROHS3 compliant and REACH unaffected. The FQP17P10 offers superior electrical performance with 16.5A continuous drain current (versus 8A) and 100W power dissipation (versus 65W), along with lower on-state resistance (190mOhm versus 530mOhm). These enhanced specifications provide design margin and improved thermal performance in applications previously using the FQP8P10.

IRF9520NPBF (Infineon Technologies) — Similar Substitute

The IRF9520NPBF is a similar substitute offering equivalent voltage ratings (100V Vdss) and gate threshold specifications (4V @ 250µA). The device is housed in a TO-220AB package, which is mechanically compatible with TO-220-3 applications. The IRF9520NPBF is classified as Obsolete product status. The continuous drain current rating is 6.8A (below the FQP8P10's 8A), and on-state resistance is 480mOhm (comparable to the FQP8P10's 530mOhm). The IRF9520NPBF is ROHS3 compliant and REACH unaffected. This substitute is suitable for applications where the FQP8P10 specifications are not fully utilized or where design margins permit the slightly lower current rating.

Frequently Asked Questions (FAQ)

Q: Can the FQP17P10 directly replace the FQP8P10 in existing designs?

A: Yes. The FQP17P10 maintains identical voltage ratings (100V Vdss), gate threshold voltage (4V @ 250µA), operating temperature range (-55°C to 175°C), and TO-220-3 package configuration. The FQP17P10 provides superior current handling (16.5A versus 8A) and lower on-state resistance, making it a direct functional upgrade. No circuit modifications are required.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both TO-220-3 and TO-220AB are through-hole packages with three leads. The primary difference is in lead configuration and mechanical tolerances. TO-220-3 and TO-220AB are mechanically compatible for most applications, though PCB footprint verification is recommended for new designs.

Q: Why is the FQP8P10 classified as obsolete?

A: The FQP8P10 is no longer in active production. The FQP17P10 is the recommended replacement, offering improved performance specifications and active product status with guaranteed long-term availability.

Q: Can the IRF9520NPBF be used in applications requiring 8A continuous drain current?

A: The IRF9520NPBF is rated for 6.8A continuous drain current, which is below the FQP8P10's 8A specification. Use of the IRF9520NPBF in applications requiring sustained 8A operation is not recommended. The FQP17P10 is the appropriate substitute for such applications.

Q: Are all three parts RoHS compliant?

A: Yes. The FQP8P10, FQP17P10, and IRF9520NPBF are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the significance of gate charge (Qg) differences between these parts?

A: Gate charge affects switching speed and driver circuit requirements. The FQP17P10 has higher gate charge (39nC versus 15nC) due to its higher current rating. The IRF9520NPBF has intermediate gate charge (27nC). Higher gate charge requires more driver current for equivalent switching speed. Existing driver circuits designed for the FQP8P10 must be evaluated for compatibility with substitute parts.

Q: Which substitute offers the best thermal performance?

A: The FQP17P10 offers the best thermal performance with 100W maximum power dissipation (versus 65W for the FQP8P10) and lower on-state resistance (190mOhm versus 530mOhm). Lower on-state resistance reduces I²R losses and heat generation in high-current applications.

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