FQP8N90C Equivalent & Substitute Parts

Part Overview

The FQP8N90C is an N-Channel MOSFET manufactured by onsemi, rated for 900V drain-to-source voltage with 6.3A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is classified as obsolete. The FQP8N90C operates across a temperature range of -55°C to 150°C and dissipates up to 171W at the case temperature. Due to its obsolete product status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and component sourcing.

Substiute Parts

FQP8N90C

onsemiIn Stock: 2271FQP8N90C Datasheet

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IXTP6N100D2

IXYSIn Stock: 1256IXTP6N100D2 Datasheet

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STP6NK90Z

STMicroelectronicsIn Stock: 7818STP6NK90Z Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQP8N90C is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The main part operates at 900V Vdss. Substitute parts must maintain equal or higher voltage ratings to ensure safe operation in the original circuit topology.

Current Rating Compatibility: The FQP8N90C carries 6.3A continuous drain current. Substitute parts must support equal or higher current ratings to prevent thermal stress and component failure.

Gate Charge and Switching Characteristics: Gate charge (Qg) and input capacitance (Ciss) affect switching speed and driver circuit requirements. Substitute parts with comparable or lower values maintain circuit performance without requiring driver redesign.

On-State Resistance (Rds On): The FQP8N90C exhibits 1.9Ohm maximum on-state resistance. Lower Rds On values reduce conduction losses and heat dissipation, while higher values increase power dissipation and may require thermal management review.

Package and Mounting: All substitute parts must use Through Hole TO-220-3 packaging to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink assemblies.

Compliance and Product Status: Substitute parts must maintain ROHS3 compliance and preferably carry Active product status for long-term availability and supply chain stability.

Parameter Comparison

Engineering Selection Recommendations

STP6NK90Z (STMicroelectronics): This part is the primary substitute for the FQP8N90C. It maintains identical 900V voltage rating and comparable 5.8A continuous drain current, representing a 7.9% reduction from the original 6.3A specification. The STP6NK90Z exhibits slightly higher on-state resistance (2Ohm versus 1.9Ohm) and increased gate charge (60.5nC versus 45nC), which may result in marginally higher switching losses. However, the lower input capacitance (1350pF versus 2080pF) provides improved switching performance. The device carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory conformance. The STP6NK90Z is suitable for direct replacement in applications where the 7.9% current reduction and minor performance trade-offs are acceptable.

IXTP6N100D2 (IXYS): This part offers a higher voltage rating of 1000V, providing 11.1% additional voltage margin over the FQP8N90C. The continuous drain current is rated at 6A, representing a 4.8% reduction from the original specification. The IXTP6N100D2 exhibits higher on-state resistance (2.2Ohm) and significantly higher gate charge (95nC), indicating increased switching losses and driver circuit stress. The input capacitance is elevated at 2650pF, which may require driver circuit optimization. The maximum gate voltage is limited to ±20V, compared to ±30V for the FQP8N90C, which may restrict gate drive flexibility. The IXTP6N100D2 carries Active product status and ROHS3 compliance. This part is suitable for applications requiring higher voltage headroom but where increased switching losses and reduced gate drive voltage range are acceptable trade-offs.

Both substitute parts maintain Through Hole TO-220-3 packaging, ensuring mechanical and thermal compatibility with existing designs. Selection between STP6NK90Z and IXTP6N100D2 depends on circuit voltage requirements, switching frequency, and thermal management capabilities.

Frequently Asked Questions (FAQ)

Q: Can the STP6NK90Z directly replace the FQP8N90C without circuit modifications?

A: The STP6NK90Z is mechanically and electrically compatible for direct replacement in most applications. Both devices share identical 900V voltage rating, comparable current ratings (5.8A versus 6.3A), and identical TO-220-3 packaging. The 7.9% current reduction and minor on-state resistance increase are within acceptable margins for most circuit designs. However, applications operating at maximum current or with tight thermal budgets require verification of thermal performance under actual operating conditions.

Q: What are the key differences between STP6NK90Z and IXTP6N100D2?

A: The primary differences are voltage rating (900V versus 1000V), continuous drain current (5.8A versus 6A), on-state resistance (2Ohm versus 2.2Ohm), gate charge (60.5nC versus 95nC), and maximum gate voltage (±30V versus ±20V). The STP6NK90Z maintains closer electrical alignment with the FQP8N90C, while the IXTP6N100D2 provides higher voltage rating at the cost of increased switching losses and reduced gate drive voltage range.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The FQP8N90C, STP6NK90Z, and IXTP6N100D2 are all ROHS3 compliant and REACH unaffected, ensuring regulatory conformance for applications subject to environmental and hazardous substance restrictions.

Q: Does the higher gate charge of IXTP6N100D2 require driver circuit changes?

A: The IXTP6N100D2 exhibits 95nC gate charge compared to 45nC for the FQP8N90C. Higher gate charge increases switching time and driver current requirements. Existing driver circuits designed for the FQP8N90C may experience reduced switching speed or increased driver stress with the IXTP6N100D2. Driver circuit evaluation is necessary for applications with high switching frequencies or tight timing requirements.

Q: What is the significance of input capacitance differences?

A: Input capacitance (Ciss) affects switching speed and driver circuit performance. The FQP8N90C exhibits 2080pF, the STP6NK90Z exhibits 1350pF, and the IXTP6N100D2 exhibits 2650pF. Lower input capacitance (STP6NK90Z) enables faster switching and reduced driver stress. Higher input capacitance (IXTP6N100D2) increases switching time and may require driver optimization for high-frequency applications.

Q: Can the IXTP6N100D2 be used in circuits designed for 900V operation?

A: Yes. The IXTP6N100D2 is rated for 1000V operation, providing 11.1% additional voltage margin. It is suitable for use in 900V circuits and offers improved voltage headroom for transient overvoltage conditions. However, the higher on-state resistance and gate charge may increase power dissipation and switching losses compared to the FQP8N90C.

Q: Are there inventory considerations for substitute parts?

A: The FQP8N90C has 2190 pieces in stock (obsolete status). The STP6NK90Z has 7771 pieces available (active status), and the IXTP6N100D2 has 1156 pieces available (active status). The STP6NK90Z offers superior long-term availability due to active product status and higher inventory levels.

Q: What is the operating temperature range for all parts?

A: All three devices operate across -55°C to 150°C junction temperature range, ensuring thermal compatibility across industrial and commercial applications.