FQP6N90C Equivalent & Substitute Parts

Part Overview

The FQP6N90C is an N-Channel 900V 6A MOSFET manufactured by onsemi in the QFET® series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The FQP6N90C is designed for high-voltage switching applications requiring 900V drain-to-source voltage capability with moderate current handling at 6A continuous drain current.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Current - Continuous Drain (Id) @ 25°C	6	A
Rds On (Max) @ Id, Vgs	2.3 @ 3A, 10V	Ohm
Gate Charge (Qg) (Max) @ Vgs	40 @ 10V	nC
Power Dissipation (Max)	167	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FQP6N90C is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 900V minimum
Package Type: TO-220-3 or compatible TO-220 variant
Mounting Type: Through Hole
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Continuous Drain Current (Id): Equal to or greater than 6A
Gate Charge (Qg): Lower values preferred for faster switching
On-State Resistance (Rds On): Lower values preferred for reduced power dissipation
Input Capacitance (Ciss): Lower values preferred for reduced gate drive requirements

The FQP9N90C qualifies as a manufacturer-recommended substitute with identical voltage rating and superior current and power handling. The IXFP4N85X and STP6NK90Z are similar alternatives with trade-offs in voltage, current, or thermal characteristics but maintain functional compatibility within specific application constraints.

Parameter Comparison

Parameter	FQP6N90C (Main)	FQP9N90C (MFR Recommended)	IXFP4N85X (Similar)	STP6NK90Z (Similar)
Manufacturer	onsemi	onsemi	IXYS	STMicroelectronics
Drain to Source Voltage (Vdss)	900V	900V	850V	900V
Current - Continuous Drain (Id) @ 25°C	6A	8A	3.5A	5.8A
Rds On (Max) @ Id, Vgs	2.3Ω @ 3A, 10V	1.4Ω @ 4A, 10V	2.5Ω @ 2A, 10V	2Ω @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V	58nC @ 10V	7nC @ 10V	60.5nC @ 10V
Power Dissipation (Max)	167W	205W	150W	140W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FQP9N90C (Manufacturer-Recommended Substitute)

The FQP9N90C is the primary substitute for the FQP6N90C. Both devices are manufactured by onsemi within the QFET® series and share identical voltage ratings (900V Vdss) and operating temperature ranges (-55°C to 150°C). The FQP9N90C is in active product status, ensuring long-term availability and supply chain stability. It provides superior current handling (8A versus 6A) and improved power dissipation capability (205W versus 167W), making it suitable for applications requiring higher performance margins. The on-state resistance is lower (1.4Ω versus 2.3Ω), resulting in reduced power losses. Both devices are ROHS3 compliant and REACH unaffected.

IXFP4N85X (Similar Alternative)

The IXFP4N85X, manufactured by IXYS in the HiPerFET™ Ultra X series, operates at 850V Vdss, which is 50V lower than the FQP6N90C. This device is suitable only for applications where the maximum operating voltage does not exceed 850V. The IXFP4N85X provides significantly lower gate charge (7nC versus 40nC), enabling faster switching characteristics. However, the continuous drain current is limited to 3.5A, making this device unsuitable for applications requiring the full 6A current capability of the FQP6N90C. This part is in active status and ROHS3 compliant.

STP6NK90Z (Similar Alternative)

The STP6NK90Z, manufactured by STMicroelectronics in the SuperMESH™ series, maintains the 900V Vdss rating and provides 5.8A continuous drain current, closely matching the FQP6N90C specification. The on-state resistance is 2Ω at 2.9A, which is comparable to the FQP6N90C. Gate charge is higher at 60.5nC, indicating slower switching characteristics. Power dissipation is rated at 140W, which is lower than the FQP6N90C. This device is in active status and ROHS3 compliant, providing a direct voltage and current alternative with minor performance trade-offs.

Frequently Asked Questions (FAQ)

Q: Can the FQP9N90C directly replace the FQP6N90C in all applications?

A: The FQP9N90C is electrically compatible with the FQP6N90C for applications operating at or below 900V. Both devices share identical voltage ratings, gate threshold specifications, and operating temperature ranges. The FQP9N90C provides superior current and power handling, making it suitable for the same applications with improved performance margins. Both devices use the TO-220-3 package and through-hole mounting, ensuring mechanical compatibility.

Q: What are the limitations of the IXFP4N85X as a substitute?

A: The IXFP4N85X has a maximum drain-to-source voltage of 850V, which is 50V lower than the FQP6N90C. This device is not suitable for applications requiring the full 900V rating. Additionally, the continuous drain current is limited to 3.5A, making it unsuitable for applications requiring 6A or higher current. The IXFP4N85X is appropriate only for lower-voltage applications (≤850V) with current requirements below 3.5A.

Q: How does the STP6NK90Z compare to the FQP6N90C in terms of switching speed?

A: The STP6NK90Z has a gate charge of 60.5nC compared to the FQP6N90C at 40nC. Higher gate charge indicates slower switching transitions and increased gate drive requirements. For applications sensitive to switching speed or gate drive power consumption, the FQP9N90C with 58nC gate charge or the IXFP4N85X with 7nC gate charge may be more suitable alternatives.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed (FQP9N90C, IXFP4N85X, and STP6NK90Z) are ROHS3 compliant and REACH unaffected, matching the compliance status of the FQP6N90C. All devices are suitable for applications requiring environmental compliance with these standards.

Q: What is the significance of the different package designations (TO-220-3 versus TO-220AB)?

A: The TO-220-3 and TO-220AB designations refer to the same physical package form factor used for through-hole mounting. Both are compatible with standard TO-220 footprints and mounting hardware. The designations reflect manufacturer-specific naming conventions but do not indicate functional or mechanical differences relevant to substitution.

Q: Why is the FQP6N90C listed as obsolete?

A: The FQP6N90C is classified as obsolete by onsemi, indicating that the manufacturer has discontinued active production and support. The FQP9N90C serves as the active replacement within the onsemi product line, offering improved specifications and guaranteed long-term availability. For new designs or ongoing procurement, the FQP9N90C is the recommended choice.

Q: Can the FQP9N90C be used in applications originally designed for the FQP6N90C without circuit modifications?

A: The FQP9N90C can be used as a direct replacement in applications designed for the FQP6N90C without circuit modifications. Both devices have identical electrical characteristics for voltage rating, gate threshold, and operating temperature range. The FQP9N90C provides superior current and power handling, which benefits circuit performance and reliability. No gate drive circuit changes are required, although the slightly higher gate charge (58nC versus 40nC) results in marginally increased gate drive power consumption.

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