FQP6N80 N-Channel MOSFET 800V 5.8A Equivalent & Substitute Parts

Part Overview

The FQP6N80 is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with 5.8A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the QFET® series. The FQP6N80 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts listed in this reference are active products from STMicroelectronics that maintain electrical and mechanical compatibility within specified parameter ranges.

Key Parameters

Parameter	FQP6N80	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	5.8	A
On-State Resistance (Rds On Max) @ Id, Vgs	1.95 @ 2.9A, 10V	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 @ 250µA	V
Gate Charge (Qg Max) @ Vgs	31 @ 10V	nC
Power Dissipation (Max)	158	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FQP6N80 is determined by the following electrical and mechanical parameters:

Critical Parameters for Substitution:

Drain-to-Source Voltage (Vdss): Must equal 800V
Package/Mounting: Must be Through Hole TO-220-3 configuration
FET Type: Must be N-Channel MOSFET
Operating Temperature Range: Must support -55°C to 150°C

Performance Parameters (Allowable Variation):

Continuous Drain Current (Id): Substitute parts may have lower current ratings; higher ratings are acceptable
On-State Resistance (Rds On): Lower values indicate improved performance; higher values reduce efficiency
Power Dissipation: Lower values indicate reduced thermal capability; higher values provide margin
Gate Charge (Qg): Affects switching speed; variation is acceptable within application requirements

All substitute parts listed maintain the 800V Vdss rating and Through Hole TO-220-3 package configuration. Variations in current rating, on-state resistance, and power dissipation reflect different device generations and series within the 800V N-Channel MOSFET category.

Parameter Comparison

Parameter	FQP6N80	STP4N80K5	STP5NK80Z	STP6N80K5	STP7NK80Z	Unit
Manufacturer	onsemi	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	—
Drain-to-Source Voltage (Vdss)	800	800	800	800	800	V
Continuous Drain Current (Id) @ 25°C	5.8	3	4.3	4.5	5.2	A
On-State Resistance (Rds On Max) @ Id, Vgs	1.95 @ 2.9A, 10V	2.5 @ 1.5A, 10V	2.4 @ 2.15A, 10V	1.6 @ 2A, 10V	1.8 @ 2.6A, 10V	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 @ 250µA	5 @ 100µA	4.5 @ 100µA	5 @ 100µA	4.5 @ 100µA	V
Gate Charge (Qg Max) @ Vgs	31 @ 10V	10.5 @ 10V	45.5 @ 10V	7.5 @ 10V	56 @ 10V	nC
Power Dissipation (Max)	158	60	110	85	125	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	—
Product Status	Obsolete	Active	Active	Active	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Substitute: STP7NK80Z

The STP7NK80Z is the closest electrical equivalent to the FQP6N80. It provides 5.2A continuous drain current, which approaches the original 5.8A specification. The on-state resistance of 1.8Ohm at 2.6A, 10V is comparable to the FQP6N80 at 1.95Ohm. Power dissipation rating of 125W is lower than the original 158W but remains substantial for most applications. The STP7NK80Z is an active product with ROHS3 compliance and full availability.

Secondary Substitute: STP6N80K5

The STP6N80K5 offers superior on-state resistance performance at 1.6Ohm, the lowest among all substitutes. Continuous drain current is 4.5A with 85W power dissipation. This device is suitable for applications where reduced conduction losses are prioritized. The STP6N80K5 is an active product with ROHS3 compliance and the highest inventory availability (73,988 pieces).

Alternative Substitute: STP5NK80Z

The STP5NK80Z provides 4.3A continuous drain current with 2.4Ohm on-state resistance and 110W power dissipation. This device is suitable for applications with moderate current requirements. The STP5NK80Z is an active product with ROHS3 compliance and high inventory availability (19,225 pieces).

Lower Current Alternative: STP4N80K5

The STP4N80K5 is rated for 3A continuous drain current with 2.5Ohm on-state resistance and 60W power dissipation. This device is suitable only for applications with reduced current demands. The STP4N80K5 is an active product with ROHS3 compliance.

All substitute parts maintain the 800V Vdss rating, Through Hole TO-220-3 package configuration, and -55°C to 150°C operating temperature range. All substitute parts are manufactured by STMicroelectronics and carry ROHS3 compliance certification.

Frequently Asked Questions (FAQ)

Q: Can the STP7NK80Z directly replace the FQP6N80 in my circuit?

A: The STP7NK80Z is electrically and mechanically compatible with the FQP6N80. Both devices share the same 800V Vdss rating, Through Hole TO-220-3 package, and -55°C to 150°C operating temperature range. The STP7NK80Z provides 5.2A continuous drain current compared to the FQP6N80's 5.8A. Verify that your application can operate within the lower current specification and the 125W power dissipation limit.

Q: What is the difference between the substitute parts in terms of current handling?

A: The substitute parts are rated for different continuous drain currents: STP4N80K5 (3A), STP5NK80Z (4.3A), STP6N80K5 (4.5A), and STP7NK80Z (5.2A). Selection depends on your circuit's current requirements. The FQP6N80 is rated for 5.8A, so the STP7NK80Z provides the closest current specification.

Q: Why does the STP6N80K5 have lower on-state resistance than the FQP6N80?

A: The STP6N80K5 is a more recent device from STMicroelectronics' SuperMESH5™ series, which incorporates advanced semiconductor technology that reduces on-state resistance. Lower on-state resistance results in reduced conduction losses and improved efficiency, though the device is rated for 4.5A continuous drain current rather than 5.8A.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (STP4N80K5, STP5NK80Z, STP6N80K5, and STP7NK80Z) are ROHS3 compliant. The original FQP6N80 does not specify RoHS status.

Q: Can I use a substitute part with lower power dissipation rating?

A: Power dissipation rating indicates the device's thermal capability. If your application requires the full 158W dissipation of the FQP6N80, you must select a substitute with adequate power dissipation. The STP7NK80Z (125W) and STP5NK80Z (110W) provide reduced thermal capability compared to the original. Verify thermal management in your circuit design.

Q: What is the significance of gate charge (Qg) differences among the substitute parts?

A: Gate charge affects switching speed and driver circuit requirements. The FQP6N80 has 31nC gate charge. Substitute parts range from 7.5nC (STP6N80K5) to 56nC (STP7NK80Z). Lower gate charge enables faster switching; higher gate charge requires more driver current. Verify compatibility with your gate driver circuit.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts are packaged in Through Hole TO-220-3 configuration, identical to the FQP6N80. This ensures mechanical compatibility with existing PCB layouts and mounting hardware.

Q: Which substitute part has the best availability?

A: The STP6N80K5 has the highest inventory availability at 73,988 pieces. The STP5NK80Z has 19,225 pieces available. Both devices are in active production status.

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