FQP6N70 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQP6N70 is an N-Channel MOSFET manufactured by onsemi, rated for 700V drain-to-source voltage with 6.2A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the QFET® series. The FQP6N70 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the specified voltage and current operating ranges while accommodating the through-hole TO-220-3 package format.

Key Parameters

Parameter	FQP6N70 Value	Unit
Drain-to-Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
On-State Resistance (Rds On) @ Id, Vgs	1.5 @ 3.1A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	5 @ 250µA	V
Gate Charge (Qg) @ Vgs	40 @ 10V	nC
Input Capacitance (Ciss) @ Vds	1400 @ 25V	pF
Power Dissipation (Max)	142	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FQP6N70 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 700V. This ensures the device can withstand the maximum drain-to-source voltage in the application circuit.

Current Rating Compatibility: Substitute parts must have a continuous drain current (Id) rating equal to or greater than 6.2A at 25°C. This ensures the device can handle the required load current without thermal stress.

On-State Resistance (Rds On): Substitute parts should maintain comparable Rds On values to ensure similar power dissipation and thermal characteristics. Significant deviations affect circuit efficiency and heat management.

Package Compatibility: All substitute parts must use the TO-220-3 through-hole package to ensure mechanical and thermal interface compatibility with existing PCB designs and heat sink mounting arrangements.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with similar or lower values maintain circuit performance characteristics.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating temperature range to ensure reliability across all environmental conditions.

Compliance and Status: Substitute parts must maintain RoHS3 compliance and REACH compliance status to meet regulatory requirements for new designs and procurement.

Parameter Comparison

Parameter	FQP6N70	AOT8N80L	DMG9N65CT	IXFP7N80P	IXFP7N80PM	STP5N60M2	STP5NK60Z	STP7NK80Z	STP9NK90Z
Manufacturer	onsemi	Alpha & Omega	Diodes Inc.	IXYS	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	700	800	650	800	800	600	600	800	900
Id @ 25°C (A)	6.2	7.4	9	7	3.5	3.7	5	5.2	8
Rds On @ Id, Vgs (Ohm)	1.5 @ 3.1A, 10V	1.63 @ 4A, 10V	1.3 @ 4.5A, 10V	1.44 @ 3.5A, 10V	1.44 @ 3.5A, 10V	1.4 @ 1.85A, 10V	1.6 @ 2.5A, 10V	1.8 @ 2.6A, 10V	1.3 @ 3.6A, 10V
Vgs(th) @ Id (V)	5 @ 250µA	4.5 @ 250µA	5 @ 250µA	5 @ 1mA	5 @ 1mA	4 @ 250µA	4.5 @ 50µA	4.5 @ 100µA	4.5 @ 100µA
Qg @ Vgs (nC)	40 @ 10V	32 @ 10V	39 @ 10V	32 @ 10V	32 @ 10V	4.5 @ 10V	34 @ 10V	56 @ 10V	72 @ 10V
Ciss @ Vds (pF)	1400 @ 25V	1650 @ 25V	2310 @ 25V	1890 @ 25V	1890 @ 25V	165 @ 100V	690 @ 25V	1138 @ 25V	2115 @ 25V
Power Dissipation (W)	142	245	165	200	50	45	90	125	160
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220	TO-220-3	TO-220-3	TO-220-3	TO-220	TO-220	TO-220	TO-220
Product Status	Obsolete	Not For New Designs	Obsolete	Active	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
REACH Status	Unaffected	Unaffected	Affected	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected

Engineering Selection Recommendations

Primary Substitutes for Active Production:

IXFP7N80P and IXFP7N80PM from IXYS are active products with full compliance status. IXFP7N80P provides 800V/7A ratings with 200W power dissipation, exceeding the FQP6N70 current and power specifications. IXFP7N80PM operates at 800V/3.5A with reduced power dissipation of 50W, suitable for lower-power applications. Both devices maintain TO-220-3 packaging and full operating temperature range support.

STP7NK80Z from STMicroelectronics is an active product rated for 800V/5.2A with 125W power dissipation. This device provides voltage margin above the FQP6N70 while maintaining comparable current handling. The SuperMESH™ technology offers optimized switching characteristics.

STP5NK60Z from STMicroelectronics is an active product rated for 600V/5A with 90W power dissipation. This device operates below the FQP6N70 voltage rating and is suitable for applications where 600V maximum voltage is acceptable.

Secondary Substitutes:

AOT8N80L from Alpha & Omega Semiconductor is classified as "Not For New Designs" and should not be selected for new product development. This device is retained in the substitute list for legacy system maintenance only.

DMG9N65CT from Diodes Incorporated is obsolete and carries REACH Affected status. This device should not be selected for new applications.

STP5N60M2 from STMicroelectronics is active but operates at reduced voltage (600V) and current (3.7A) ratings compared to the FQP6N70. Selection is limited to applications with lower voltage and current requirements.

STP9NK90Z from STMicroelectronics is an active product rated for 900V/8A with 160W power dissipation. This device provides the highest voltage margin and is suitable for high-voltage applications requiring enhanced reliability margins.

Compliance Considerations:

All recommended active substitutes maintain RoHS3 compliance. REACH compliance status varies: IXFP7N80P, IXFP7N80PM, STP5N60M2, STP5NK60Z, STP7NK80Z, and STP9NK90Z are REACH Unaffected. DMG9N65CT is REACH Affected and should be avoided in new designs.

Frequently Asked Questions (FAQ)

Q: Can IXFP7N80PM substitute for FQP6N70 in all applications?

A: IXFP7N80PM has a lower continuous drain current rating (3.5A) compared to FQP6N70 (6.2A). Substitution is valid only for applications requiring 3.5A or less. For applications requiring the full 6.2A current capacity, IXFP7N80P or STP7NK80Z are appropriate alternatives.

Q: What is the significance of the voltage rating difference between FQP6N70 (700V) and substitute parts rated at 600V or 800V?

A: Voltage rating indicates the maximum drain-to-source voltage the device can withstand. Substitutes with 800V or 900V ratings provide additional safety margin and are directly compatible with 700V applications. Substitutes with 600V ratings are compatible only if the application circuit operates at 600V or below. Using a 600V-rated device in a 700V circuit risks device failure.

Q: Are all substitute parts available in TO-220-3 packaging?

A: All substitute parts listed are available in TO-220 or TO-220-3 through-hole packages, ensuring mechanical compatibility with existing PCB designs and heat sink mounting arrangements. Package designation variations (TO-220 versus TO-220-3) refer to pin configuration and are functionally equivalent for this application category.

Q: Why is product status important when selecting a substitute?

A: Product status indicates manufacturer support and availability. Active products have ongoing manufacturing and supply chain support. Obsolete products may have limited availability and no manufacturer support. "Not For New Designs" products are in end-of-life phase and should not be selected for new product development. For new designs, select only active products: IXFP7N80P, IXFP7N80PM, STP5N60M2, STP5NK60Z, STP7NK80Z, or STP9NK90Z.

Q: How do gate charge and input capacitance affect substitution decisions?

A: Gate charge (Qg) and input capacitance (Ciss) determine gate drive circuit requirements and switching speed. Substitute parts with similar or lower values maintain equivalent switching performance. Higher values require stronger gate drive circuits. STP5N60M2 has significantly lower Qg (4.5 nC) and Ciss (165 pF), indicating faster switching but potentially requiring gate drive circuit redesign.

Q: What is the impact of on-state resistance (Rds On) variation among substitutes?

A: Rds On directly affects power dissipation and heat generation. Lower Rds On values reduce power loss and heat output. FQP6N70 has 1.5 Ohm Rds On. Substitutes range from 1.3 to 1.8 Ohm. Variations within this range are acceptable for most applications. Significant deviations require thermal analysis to ensure heat sink adequacy.

Q: Can STP5NK60Z be used as a direct replacement for FQP6N70?

A: STP5NK60Z operates at 600V maximum voltage, which is below the FQP6N70 rating of 700V. Direct substitution is valid only for applications operating at 600V or below. For applications requiring 700V operation, select IXFP7N80P, IXFP7N80PM, STP7NK80Z, or STP9NK90Z.

Q: What compliance certifications should be verified before selecting a substitute?

A: All listed substitutes maintain RoHS3 compliance. REACH compliance status varies. For new product development, select only REACH Unaffected devices: IXFP7N80P, IXFP7N80PM, STP5N60M2, STP5NK60Z, STP7NK80Z, or STP9NK90Z. Avoid DMG9N65CT (REACH Affected) and AOT8N80L (Not For New Designs).

Q: How does operating temperature range affect substitute selection?

A: FQP6N70 operates from -55°C to 150°C. Most substitutes support this full range. STP5N60M2 specifies only 150°C maximum without lower temperature limit. For applications requiring full -55°C to 150°C operation, verify the substitute datasheet specifies this complete range.

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