FQP55N06 Equivalent & Substitute Parts

Part Overview

The FQP55N06 is an N-Channel 60V 55A MOSFET manufactured by onsemi in the QFET® series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, indicating it is no longer in active production. The part delivers 133W maximum power dissipation and operates across a temperature range of -55°C to 175°C. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary for new designs and ongoing production requirements.

Substiute Parts

FQP55N06
onsemiIn Stock: 1406FQP55N06 Datasheet
FQP55N06
Current Part
IRFZ44EPBF
Infineon TechnologiesIn Stock: 10516IRFZ44EPBF Datasheet
IRFZ44EPBF
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IRFZ44VPBF
Infineon TechnologiesIn Stock: 20583IRFZ44VPBF Datasheet
IRFZ44VPBF
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IRFZ48PBF
Vishay SiliconixIn Stock: 2040IRFZ48PBF Datasheet
IRFZ48PBF
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STP45NF06
STMicroelectronicsIn Stock: 8832STP45NF06 Datasheet
STP45NF06
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STP55NF06
STMicroelectronicsIn Stock: 155444STP55NF06 Datasheet
STP55NF06
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Key Parameters

Parameter FQP55N06 Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 55 A
Rds On (Max) @ 27.5A, 10V 20 mOhm
Power Dissipation (Max) 133 W
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 46 nC
Input Capacitance (Ciss) @ 25V 1690 pF
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the FQP55N06 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 60V (exact match required)
  • N-Channel MOSFET technology with Metal Oxide construction
  • Through-hole mounting in TO-220 package family
  • Operating temperature range: -55°C to 175°C
  • Gate threshold voltage (Vgs(th)): 4V @ 250µA
  • Drive voltage: 10V

Secondary Compatibility Parameters:

  • Continuous drain current (Id): 50A to 55A acceptable
  • Rds On (Max): 16.5mOhm to 28mOhm acceptable
  • Power dissipation: 80W to 190W acceptable
  • Gate charge (Qg): 46nC to 110nC acceptable
  • Input capacitance (Ciss): 980pF to 2400pF acceptable

All substitute parts listed maintain the 60V Vdss rating and N-Channel MOSFET topology. Variations in continuous current rating, on-resistance, and power dissipation reflect different manufacturing processes and thermal characteristics, all of which remain within acceptable substitution parameters for the FQP55N06 application envelope.

Parameter Comparison

Parameter FQP55N06 IRFZ44EPBF IRFZ44VPBF IRFZ48PBF STP45NF06 STP55NF06
Manufacturer onsemi Infineon Infineon Vishay Siliconix STMicroelectronics STMicroelectronics
Vdss (V) 60 60 60 60 60 60
Id @ 25°C (A) 55 48 55 50 38 50
Rds On (Max) (mOhm) 20 23 16.5 18 28 18
Power Dissipation (Max) (W) 133 110 115 190 80 110
Vgs(th) @ 250µA (V) 4 4 4 4 4 4
Gate Charge (Qg) @ 10V (nC) 46 60 67 110 58 60
Input Capacitance (Ciss) @ 25V (pF) 1690 1360 1812 2400 980 1300
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 to 175 -55 to 175
Package TO-220-3 TO-220AB TO-220AB TO-220AB TO-220 TO-220
Product Status Obsolete Not For New Designs Not For New Designs Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Active Production and New Designs:

The IRFZ48PBF (Vishay Siliconix) and STP55NF06 (STMicroelectronics) are the preferred substitutes for the obsolete FQP55N06. Both parts carry Active product status and ROHS3 compliance certification, ensuring long-term availability and regulatory alignment.

IRFZ48PBF Selection Rationale:

  • Active product status with established supply chain
  • ROHS3 compliant
  • Highest power dissipation rating (190W) among substitutes, providing thermal margin
  • Continuous drain current of 50A closely matches the FQP55N06 specification
  • On-resistance of 18mOhm is within acceptable range

STP55NF06 Selection Rationale:

  • Active product status with highest inventory availability (155,400 units)
  • ROHS3 compliant
  • Exact continuous drain current match (50A) to FQP55N06
  • On-resistance of 18mOhm matches IRFZ48PBF
  • Established STMicroelectronics supply chain

For Legacy System Maintenance:

The IRFZ44VPBF (Infineon) provides an alternative with exact 55A continuous drain current specification, though it carries "Not For New Designs" status. This part is suitable only for direct replacement in existing systems where design changes are not feasible.

Not Recommended:

The STP45NF06 exhibits reduced continuous drain current (38A) and higher on-resistance (28mOhm), making it suitable only for applications with lower current requirements than the original FQP55N06 specification.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ44VPBF be used as a direct replacement for the FQP55N06?

A: The IRFZ44VPBF provides electrical compatibility with identical 60V Vdss rating and 55A continuous drain current. However, it carries "Not For New Designs" status. It is suitable for legacy system maintenance only. For new designs, use IRFZ48PBF or STP55NF06.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are through-hole TO-220 package variants with identical pin configurations and mechanical footprints. TO-220AB is the standardized designation used by Infineon and Vishay. All listed substitutes are mechanically compatible with the original FQP55N06 TO-220-3 footprint.

Q: Why does the IRFZ48PBF have higher power dissipation (190W) than the FQP55N06 (133W)?

A: Power dissipation rating reflects the thermal design of the specific die and package implementation. The higher rating indicates improved thermal performance in the IRFZ48PBF, providing additional thermal margin in applications. This does not affect electrical substitution compatibility.

Q: Is the STP55NF06 suitable for new production designs?

A: Yes. The STP55NF06 carries Active product status and ROHS3 compliance. It is the recommended choice for new production due to highest inventory availability (155,400 units) and established supply chain through STMicroelectronics.

Q: What is the significance of the "Not For New Designs" status on the IRFZ44EPBF and IRFZ44VPBF?

A: This status indicates the manufacturer is not recommending these parts for new circuit designs, though they remain available for existing applications. These parts are suitable for legacy system support and direct replacement scenarios only.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All active substitute parts (IRFZ48PBF, STP45NF06, STP55NF06) carry ROHS3 compliance certification. The IRFZ44EPBF and IRFZ44VPBF also carry ROHS3 compliance despite their "Not For New Designs" status.

Q: Which substitute has the lowest on-resistance?

A: The IRFZ44VPBF exhibits the lowest on-resistance at 16.5mOhm @ 31A, 10V. The IRFZ48PBF and STP55NF06 both provide 18mOhm @ specified conditions, representing a negligible difference in practical applications.

Q: Can the STP45NF06 replace the FQP55N06 in all applications?

A: No. The STP45NF06 is limited to 38A continuous drain current compared to the FQP55N06 specification of 55A. It is suitable only for applications with lower current requirements and should not be used as a direct replacement without circuit redesign analysis.

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