FQP50N06 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQP50N06 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 50A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for general-purpose switching applications requiring moderate current handling at 60V operation. The FQP50N06 carries an Obsolete product status, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current capacity, and thermal characteristics while accommodating available packaging options.

Substiute Parts

FQP50N06
onsemiIn Stock: 35257FQP50N06 Datasheet
FQP50N06
Current Part
FQP50N06L-EPKE0003
onsemiIn Stock: 916FQP50N06L-EPKE0003 Datasheet
FQP50N06L-EPKE0003
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AOT2618L
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IRFB3806PBF
Infineon TechnologiesIn Stock: 1514IRFB3806PBF Datasheet
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IRFZ44L
Vishay SiliconixIn Stock: 842IRFZ44L Datasheet
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IRFZ44PBF
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IRFZ44RPBF
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IRFZ44VPBF
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PSMN3R0-60PS,127
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PSMN4R6-60PS,127
Nexperia USA Inc.In Stock: 8893PSMN4R6-60PS,127 Datasheet
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STP45NF06
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STP60NF06
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Key Parameters

Parameter FQP50N06 Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 50 A (Tc)
On-State Resistance (Rds On) @ 25A, 10V 22 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 41 nC
Power Dissipation (Max) 120 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the FQP50N06 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
  • Continuous Drain Current (Id): Must equal or exceed 50A at 25°C
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V nominal specification
  • Operating Temperature Range: Must span -55°C to 175°C minimum
  • Package Type: TO-220-3 or compatible through-hole variants (TO-220AB, TO-220)

Secondary Compatibility Factors:

  • On-State Resistance (Rds On): Lower values indicate improved performance; values within 15-30 mOhm range maintain functional equivalence
  • Gate Charge (Qg): Lower values reduce switching losses; range of 20-70 nC acceptable
  • Power Dissipation: Minimum 120W at case temperature required for thermal equivalence

Substitute parts are grouped into three categories based on electrical performance alignment and product status:

Category 1 - Direct Manufacturer Upgrade (onsemi): FQP50N06L-EPKE0003 provides enhanced specifications with improved Rds On and lower gate charge while maintaining identical voltage and current ratings.

Category 2 - Equivalent Current Rating (50A): IRFZ44PBF, IRFZ44RPBF, and IRFZ44VPBF deliver 50A or greater continuous drain current at 60V with TO-220AB packaging, maintaining electrical compatibility.

Category 3 - Enhanced Current Capacity (100A): PSMN3R0-60PS,127 and PSMN4R6-60PS,127 provide 100A continuous drain current at 60V, enabling higher current applications with superior thermal performance.

Category 4 - Reduced Current Rating (23-43A): AOT2618L and IRFB3806PBF operate at 60V with reduced continuous drain current, suitable for applications not requiring full 50A capacity.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On @ 10V (mOhm) Vgs(th) @ 250µA (V) Qg @ 10V (nC) Power Dissipation (W) Package Status
FQP50N06 onsemi 60 50 22 4 41 120 TO-220-3 Obsolete
FQP50N06L-EPKE0003 onsemi 60 52.4 21 2.5 32 121 TO-220-3 Active
IRFZ44PBF Vishay Siliconix 60 50 28 4 67 150 TO-220AB Active
IRFZ44RPBF Vishay Siliconix 60 50 28 4 67 150 TO-220AB Active
IRFZ44VPBF Infineon Technologies 60 55 16.5 4 67 115 TO-220AB Not For New Designs
IRFB3806PBF Infineon Technologies 60 43 15.8 4 30 71 TO-220AB Active
PSMN3R0-60PS,127 Nexperia USA Inc. 60 100 3 4 130 306 TO-220AB Obsolete
PSMN4R6-60PS,127 Nexperia USA Inc. 60 100 4.6 4 70.8 211 TO-220AB Obsolete
STP45NF06 STMicroelectronics 60 38 28 4 58 80 TO-220 Active
AOT2618L Alpha & Omega Semiconductor Inc. 60 23 19 2.5 20 41.5 TO-220-3 Active
IRFZ44L Vishay Siliconix 60 50 28 4 67 150 TO-262-3 Active

Engineering Selection Recommendations

Primary Recommendation for New Designs:

FQP50N06L-EPKE0003 (onsemi) is the preferred substitute for the obsolete FQP50N06. This part maintains identical voltage and current specifications while offering improved electrical characteristics: lower on-state resistance (21 mOhm vs. 22 mOhm), reduced gate charge (32 nC vs. 41 nC), and lower gate threshold voltage (2.5V vs. 4V). The device carries Active product status and is RoHS3 compliant. Packaging remains TO-220-3, ensuring direct mechanical compatibility with existing PCB layouts.

Secondary Recommendations by Application Requirements:

For applications requiring enhanced thermal performance and higher current capacity, PSMN4R6-60PS,127 (Nexperia) provides 100A continuous drain current at 60V with superior on-state resistance (4.6 mOhm). This part accommodates higher power dissipation (211W) and operates within the full -55°C to 175°C temperature range. Note that this part carries Obsolete status; IRFZ44VPBF (Infineon) offers Active status with 55A capability and improved Rds On (16.5 mOhm).

For cost-optimized designs where full 50A capacity is not required, STP45NF06 (STMicroelectronics) delivers 38A continuous drain current at 60V with Active product status and RoHS3 compliance. This part maintains 60V voltage rating and -55°C to 175°C operating range.

For applications limited to lower current requirements (below 25A), AOT2618L (Alpha & Omega Semiconductor) provides 23A continuous drain current at 60V with excellent on-state resistance (19 mOhm) and Active product status.

Compliance Considerations:

All recommended substitutes maintain RoHS3 compliance and REACH Unaffected status, matching the original FQP50N06 environmental certifications. IRFZ44L carries RoHS non-compliant status and should be avoided for new designs requiring regulatory compliance.

Package Compatibility:

TO-220-3 and TO-220AB packages are mechanically compatible for most applications. TO-262-3 (IRFZ44L) requires PCB layout modification due to different pin configuration and thermal characteristics.

Frequently Asked Questions (FAQ)

Q: Can FQP50N06L-EPKE0003 directly replace FQP50N06 without PCB modifications?

A: Yes. FQP50N06L-EPKE0003 maintains identical TO-220-3 packaging and pin configuration. The improved electrical characteristics (lower Rds On, reduced gate charge) provide enhanced performance without requiring circuit redesign. Gate drive voltage compatibility is maintained at 10V nominal operation.

Q: What is the primary difference between IRFZ44PBF, IRFZ44RPBF, and IRFZ44VPBF?

A: All three parts deliver 50A or greater continuous drain current at 60V with TO-220AB packaging. IRFZ44PBF and IRFZ44RPBF are electrically identical (50A, 28 mOhm Rds On) with Active status. IRFZ44VPBF provides enhanced performance (55A, 16.5 mOhm Rds On) but carries Not For New Designs status. For new designs, IRFZ44PBF or IRFZ44RPBF are preferred.

Q: Why are PSMN3R0-60PS,127 and PSMN4R6-60PS,127 listed as Obsolete despite superior specifications?

A: Both parts provide 100A continuous drain current at 60V with exceptional on-state resistance (3 mOhm and 4.6 mOhm respectively). Obsolete status indicates these parts are no longer in active production. Existing inventory may be available, but new designs should select Active alternatives such as IRFZ44VPBF or FQP50N06L-EPKE0003.

Q: Is TO-220AB packaging compatible with TO-220-3 PCB layouts?

A: TO-220AB and TO-220-3 are mechanically compatible for standard through-hole applications. Both packages feature identical pin spacing (2.54 mm) and mounting hole patterns. Thermal performance may differ due to variations in lead frame design; verify thermal requirements for high-power applications.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (FQP50N06L-EPKE0003 at 32 nC) reduces switching losses and enables faster switching compared to higher gate charge devices (IRFZ44 series at 67 nC). Selection depends on switching frequency and gate driver capability.

Q: Can AOT2618L be used in applications designed for FQP50N06?

A: AOT2618L is suitable only for applications where continuous drain current does not exceed 23A. The part maintains 60V voltage rating and -55°C to 175°C operating range. Applications requiring the full 50A capacity of FQP50N06 must select alternatives with equivalent or higher current ratings.

Q: What are the RoHS compliance implications for substitute selection?

A: FQP50N06 is RoHS3 compliant. All recommended substitutes except IRFZ44L maintain RoHS3 compliance. For applications requiring regulatory compliance with RoHS directives, avoid IRFZ44L (RoHS non-compliant) and select from FQP50N06L-EPKE0003, IRFZ44PBF, IRFZ44RPBF, IRFZ44VPBF, IRFB3806PBF, STP45NF06, AOT2618L, or Nexperia parts.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: Lower Rds On reduces conduction losses and heat generation during on-state operation. FQP50N06L-EPKE0003 (21 mOhm) and IRFB3806PBF (15.8 mOhm) provide superior efficiency compared to IRFZ44 series (28 mOhm). Selection depends on thermal budget and efficiency requirements; higher current applications benefit from lower Rds On values.

Q: Are there package options other than TO-220 for 60V 50A MOSFETs?

A: IRFZ44L provides TO-262-3 packaging (I2PAK) as an alternative to TO-220 variants. TO-262-3 offers improved thermal performance through larger copper area contact but requires different PCB layout and mounting hardware. Standard TO-220 and TO-220AB packages remain the most common for this voltage and current class.

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