FQP4N80 N-Channel MOSFET 800V 3.9A Equivalent & Substitute Parts

Part Overview

The FQP4N80 is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with 3.9A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the QFET® series. The FQP4N80 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the through-hole TO-220-3 package standard.

Key Parameters

Parameter	FQP4N80 Specification
Drain-to-Source Voltage (Vdss)	800 V
Continuous Drain Current (Id) @ 25°C	3.9 A
On-State Resistance (Rds On Max) @ Id, Vgs	3.6 Ω @ 1.95 A, 10 V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 V @ 250 µA
Power Dissipation (Max)	130 W
Operating Temperature Range	-55°C to 150°C
Package Type	TO-220-3
Mounting Type	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FQP4N80 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain the 800V Vdss rating or higher to ensure safe operation in the original circuit application. Parts with lower voltage ratings are not suitable.

Current Capacity: Substitute parts must support continuous drain current equal to or greater than 3.9A at 25°C. Parts with lower current ratings may cause thermal stress or circuit malfunction.

On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation. Substitute parts with equal or lower Rds On values provide equivalent or superior performance.

Package and Mounting: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Thermal Performance: Power dissipation capability must be sufficient for the application. Parts with equal or higher power dissipation ratings provide equivalent thermal headroom.

Temperature Range: Operating temperature range must encompass -55°C to 150°C to maintain compatibility with the original design specifications.

Compliance: All substitute parts must maintain ROHS3 compliance and REACH unaffected status to meet regulatory requirements.

Parameter Comparison

Parameter	FQP4N80	FQP6N80C	SPP04N80C3XKSA1	STP3N80K5	STP3NK80Z	STP3NK90Z	STP4NK80Z	STP5NK80Z
Manufacturer	onsemi	onsemi	Infineon Technologies	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	800	800	800	800	800	900	800	800
Id @ 25°C (A)	3.9	5.5	4.0	2.5	2.5	3.0	3.0	4.3
Rds On Max @ Id, Vgs (Ω)	3.6 @ 1.95 A, 10 V	2.5 @ 2.75 A, 10 V	1.3 @ 2.5 A, 10 V	3.5 @ 1 A, 10 V	4.5 @ 1.25 A, 10 V	4.8 @ 1.5 A, 10 V	3.5 @ 1.5 A, 10 V	2.4 @ 2.15 A, 10 V
Vgs(th) Max @ Id (V)	5 @ 250 µA	5 @ 250 µA	3.9 @ 240 µA	5 @ 100 µA	4.5 @ 50 µA	4.5 @ 50 µA	4.5 @ 50 µA	4.5 @ 100 µA
Power Dissipation Max (W)	130	158	63	60	70	90	80	110
Gate Charge Qg Max @ 10 V (nC)	25	30	31	9.5	19	22.7	22.5	45.5
Input Capacitance Ciss Max (pF)	880 @ 25 V	1310 @ 25 V	570 @ 100 V	130 @ 100 V	485 @ 25 V	590 @ 25 V	575 @ 25 V	910 @ 25 V
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220	TO-220	TO-220	TO-220	TO-220
Product Status	Obsolete	Active	Active	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: FQP6N80C

The FQP6N80C is the manufacturer-recommended substitute for the FQP4N80. Both devices are manufactured by onsemi and share identical voltage ratings (800V Vdss) and operating temperature ranges (-55°C to 150°C). The FQP6N80C provides superior electrical performance with 5.5A continuous drain current compared to 3.9A, lower on-state resistance (2.5Ω versus 3.6Ω), and higher power dissipation capability (158W versus 130W). The FQP6N80C is classified as Active product status, ensuring long-term availability and supply chain continuity. Both devices maintain ROHS3 compliance and identical package specifications (TO-220-3 through-hole).

Secondary Substitutes: STP5NK80Z and STP4NK80Z

The STP5NK80Z (STMicroelectronics, PowerMESH™ series) and STP4NK80Z (STMicroelectronics, SuperMESH™ series) are suitable alternatives with 800V Vdss ratings and active product status. The STP5NK80Z offers 4.3A continuous drain current with 2.4Ω on-state resistance and 110W power dissipation, providing performance characteristics between the FQP4N80 and FQP6N80C. The STP4NK80Z provides 3.0A continuous drain current with 3.5Ω on-state resistance and 80W power dissipation, offering comparable performance to the original part. Both maintain ROHS3 compliance and TO-220-3 package compatibility.

Alternative Substitute: SPP04N80C3XKSA1

The SPP04N80C3XKSA1 (Infineon Technologies, CoolMOS™ series) maintains 800V Vdss rating and 4.0A continuous drain current. This device features superior on-state resistance (1.3Ω) and lower input capacitance (570pF), indicating improved switching efficiency. However, power dissipation is limited to 63W, which is significantly lower than the FQP4N80. The SPP04N80C3XKSA1 is suitable for applications where switching efficiency is prioritized over thermal capacity. This device maintains ROHS3 compliance and TO-220-3 package compatibility.

Not Recommended: STP3N80K5 and STP3NK80Z

The STP3N80K5 is classified as Not For New Designs and should not be selected for new applications. The STP3NK80Z, while active, provides only 2.5A continuous drain current, which is below the FQP4N80 specification and may be insufficient for equivalent circuit operation.

Not Recommended: STP3NK90Z

The STP3NK90Z features a 900V Vdss rating, which exceeds the original specification. While this provides additional voltage margin, the 3.0A continuous drain current is below the FQP4N80 rating and may not provide equivalent performance in current-limited applications.

Frequently Asked Questions (FAQ)

Q: Can the FQP6N80C directly replace the FQP4N80 in existing designs?

A: Yes. The FQP6N80C is the manufacturer-recommended substitute and maintains identical voltage ratings, package specifications, and operating temperature ranges. The FQP6N80C provides superior current capacity and lower on-state resistance, making it a direct upgrade. No circuit modifications are required.

Q: What is the primary difference between the FQP4N80 and FQP6N80C?

A: Both devices share 800V Vdss rating and TO-220-3 packaging. The FQP6N80C provides higher continuous drain current (5.5A versus 3.9A), lower on-state resistance (2.5Ω versus 3.6Ω), and greater power dissipation capability (158W versus 130W). The FQP6N80C is active product status while the FQP4N80 is obsolete.

Q: Are STMicroelectronics parts compatible with the onsemi FQP4N80?

A: STMicroelectronics parts (STP5NK80Z, STP4NK80Z, STP3NK80Z) are electrically compatible substitutes when voltage and current ratings are matched. All maintain 800V Vdss, TO-220-3 packaging, and -55°C to 150°C operating temperature ranges. Verify that the selected part's continuous drain current meets or exceeds the application requirement.

Q: Why does the SPP04N80C3XKSA1 have lower power dissipation than the FQP4N80?

A: The SPP04N80C3XKSA1 is optimized for switching efficiency with lower on-state resistance (1.3Ω) and lower input capacitance (570pF). The reduced power dissipation rating (63W) reflects different thermal design parameters. This device is suitable for applications prioritizing switching speed and efficiency over continuous thermal capacity.

Q: Can I use a substitute part with higher Vdss rating than the FQP4N80?

A: Yes. Parts with higher Vdss ratings (such as STP3NK90Z at 900V) provide additional voltage margin and are electrically compatible. However, verify that the continuous drain current rating meets the application requirement. The STP3NK90Z provides only 3.0A, which may be insufficient for applications requiring the full 3.9A capacity of the FQP4N80.

Q: What does "Active" product status mean for substitute selection?

A: Active product status indicates that the manufacturer actively produces and supports the part, ensuring long-term availability and supply chain continuity. Parts classified as Obsolete (FQP4N80) or Not For New Designs (STP3N80K5) should be replaced with Active alternatives for new designs and ongoing production.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and REACH unaffected status, meeting regulatory requirements for electronic component manufacturing and use.

Q: What is the significance of on-state resistance (Rds On) in substitute selection?

A: Lower Rds On values indicate reduced power dissipation during conduction, improving efficiency and reducing thermal stress. Substitute parts with equal or lower Rds On values provide equivalent or superior performance. The FQP6N80C (2.5Ω) and STP5NK80Z (2.4Ω) offer improved efficiency compared to the FQP4N80 (3.6Ω).

Q: Can I use the STP3NK80Z as a substitute despite its lower current rating?

A: The STP3NK80Z provides only 2.5A continuous drain current, which is below the FQP4N80 specification of 3.9A. This part is suitable only for applications where the actual current requirement is 2.5A or lower. For equivalent performance, select parts with current ratings of 3.9A or higher.

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