FQP4N60 N-Channel MOSFET 600V 4.4A Equivalent & Substitute Parts

Part Overview

The FQP4N60 is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 4.4A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the QFET® series. The FQP4N60 is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement.

Substitution becomes necessary when the original part reaches end-of-life status, inventory depletion, or when design requirements call for active production alternatives with comparable electrical and mechanical characteristics.

Substiute Parts

FQP4N60

onsemiIn Stock: 20396FQP4N60 Datasheet

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AOT4N60

Alpha & Omega Semiconductor Inc.In Stock: 1602AOT4N60 Datasheet

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STP3NK60Z

STMicroelectronicsIn Stock: 34346STP3NK60Z Datasheet

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STP4NK60Z

STMicroelectronicsIn Stock: 45247STP4NK60Z Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the FQP4N60 is determined by the following critical parameters:

Primary Matching Criteria:

• Drain-to-Source Voltage (Vdss): 600V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)
• Package Type: TO-220-3 Through Hole (exact match required)
• Continuous Drain Current (Id): 4.4A or greater
• On-State Resistance (Rds On): 2.2Ω or lower (at comparable gate voltage and current)
• Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

• Gate-Source Threshold Voltage (Vgs(th)): Within ±30V maximum gate voltage specification
• Power Dissipation: 106W or greater
• Moisture Sensitivity Level: 1 (Unlimited)
• REACH Status: REACH Unaffected

Substitute parts must satisfy all primary matching criteria and maintain compatibility with secondary factors to ensure functional equivalence in circuit applications.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: STP4NK60Z (STMicroelectronics)

The STP4NK60Z is the recommended primary substitute for the FQP4N60. This device matches all critical electrical parameters with 600V Vdss, 4A continuous drain current, and 2Ω on-state resistance. The STP4NK60Z carries Active product status, ensuring long-term availability and ongoing manufacturing support. RoHS3 compliance provides regulatory alignment for new designs. The SuperMESH™ series technology delivers improved performance characteristics while maintaining TO-220-3 package compatibility.

Secondary Substitute: AOT4N60 (Alpha & Omega Semiconductor Inc.)

The AOT4N60 provides functional equivalence with 600V Vdss and 4A continuous drain current. On-state resistance of 2.2Ω matches the FQP4N60 specification. However, this device carries Not For New Designs status, limiting its suitability for ongoing applications. RoHS3 compliance is confirmed. This substitute is appropriate for legacy system maintenance where component availability is constrained.

Limited Substitute: STP3NK60Z (STMicroelectronics)

The STP3NK60Z shares the 600V Vdss rating and TO-220-3 package configuration but operates at reduced continuous drain current (2.4A) and higher on-state resistance (3.6Ω). Power dissipation is limited to 45W compared to the FQP4N60 specification of 106W. This device is suitable only for applications with lower current requirements and is classified as Not For New Designs. The SuperMESH™ series technology provides improved gate charge characteristics (11.8nC).

Product Status Considerations:

The FQP4N60 (Obsolete) and AOT4N60 (Not For New Designs) are restricted from new design implementations. The STP4NK60Z (Active) is the only substitute suitable for new product development and long-term production support.

Frequently Asked Questions (FAQ)

Q: Can the STP4NK60Z directly replace the FQP4N60 in existing circuits?

A: Yes. The STP4NK60Z meets all primary electrical specifications: 600V Vdss, 4A continuous drain current, 2Ω on-state resistance, and TO-220-3 package configuration. Pin compatibility is maintained. No circuit modifications are required for functional substitution.

Q: Why is the STP3NK60Z not recommended as a primary substitute?

A: The STP3NK60Z operates at 2.4A continuous drain current, which is below the FQP4N60 specification of 4.4A. On-state resistance is 3.6Ω compared to 2.2Ω, resulting in higher power dissipation in the device. Maximum power dissipation is 45W versus 106W for the FQP4N60. This device is suitable only for applications with lower current demands.

Q: What is the significance of the TO-220-3 package specification?

A: The TO-220-3 package is a Through Hole configuration with three leads (Gate, Drain, Source). All substitute parts maintain this package type, ensuring mechanical and electrical compatibility with existing PCB layouts and thermal management solutions. Package compatibility eliminates the need for board redesign.

Q: Are there compliance differences between substitute options?

A: All substitute parts carry REACH Unaffected status and Moisture Sensitivity Level 1 (Unlimited), matching the FQP4N60 compliance profile. The STP4NK60Z and AOT4N60 are RoHS3 compliant, providing enhanced regulatory alignment. The STP3NK60Z is also RoHS3 compliant. Compliance status does not differentiate substitution suitability.

Q: How does gate charge affect substitution decisions?

A: Gate charge (Qg) influences switching speed and driver circuit requirements. The FQP4N60 specifies 20nC at 10V. The STP4NK60Z specifies 26nC, requiring slightly higher gate charge for equivalent switching performance. The AOT4N60 specifies 18nC, providing faster switching characteristics. For most applications, these variations are within acceptable driver circuit tolerances.

Q: What is the impact of on-state resistance differences?

A: On-state resistance (Rds On) directly affects power dissipation and thermal performance. The FQP4N60 specifies 2.2Ω at 2.2A and 10V. The STP4NK60Z specifies 2Ω at 2A and 10V, providing superior conduction efficiency. The AOT4N60 matches at 2.2Ω. Lower Rds On reduces heat generation and improves overall circuit efficiency. The STP3NK60Z at 3.6Ω generates significantly higher losses.

Q: Is the STP4NK60Z suitable for new product designs?

A: Yes. The STP4NK60Z carries Active product status, confirming ongoing manufacturing and long-term availability. This device is the only substitute recommended for new design implementations. Active status ensures supply chain continuity and eliminates obsolescence risk.

Q: What thermal considerations apply to substitute selection?

A: All substitute parts maintain the -55°C to 150°C operating temperature range of the FQP4N60. Power dissipation ratings differ: FQP4N60 (106W), AOT4N60 (104W), STP4NK60Z (70W), and STP3NK60Z (45W). Thermal management requirements depend on application current levels and duty cycles. The STP4NK60Z provides adequate thermal performance for 4A continuous operation with appropriate heatsinking.