FQP4N25 Equivalent & Substitute Parts

Part Overview

The FQP4N25 is an N-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage with a continuous drain current of 3.6A at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is designed for general-purpose switching and amplification applications requiring moderate voltage and current ratings.

The FQP4N25 is classified as an Obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FQP4N25

onsemiIn Stock: 2445FQP4N25 Datasheet

Current PartRFQ

IRF620PBF

Vishay SiliconixIn Stock: 24346IRF620PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQP4N25 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: Must be N-Channel MOSFET
• Technology: Must be MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 250V
• Continuous Drain Current (Id): Substitute must equal or exceed 3.6A at 25°C
• Drive Voltage: Must operate at 10V gate drive
• On-State Resistance (Rds On): Substitute performance must be compatible with application requirements
• Power Dissipation: Substitute must handle thermal requirements of the application
• Operating Temperature Range: Must support -55°C to 150°C operation

Mechanical Compatibility Criteria:

• Mounting Type: Must be Through Hole
• Package / Case: Must be TO-220-3 or compatible TO-220 variant

The IRF620PBF meets the core substitution criteria as an N-Channel MOSFET with Through Hole TO-220 packaging. However, specific electrical parameters differ and must be evaluated against application requirements.

Parameter Comparison

Engineering Selection Recommendations

FQP4N25 Status Consideration: The FQP4N25 is classified as Obsolete. The IRF620PBF is classified as Active and is ROHS3 Compliant, making it suitable for new designs and ongoing production support.

Electrical Parameter Analysis: The IRF620PBF provides higher continuous drain current (5.2A versus 3.6A), enabling operation in applications with increased current demands. However, the IRF620PBF has a lower maximum Vdss rating (200V versus 250V). Applications operating at voltages approaching or exceeding 200V require verification that the IRF620PBF voltage rating is sufficient.

The IRF620PBF exhibits lower on-state resistance (0.8 Ohm versus 1.75 Ohm), resulting in reduced power dissipation and improved thermal performance in switching applications.

Compliance and Supply Chain: The IRF620PBF carries ROHS3 Compliance and REACH Affected status, indicating alignment with current environmental and regulatory standards. The FQP4N25 is REACH Unaffected. Applications subject to ROHS or REACH requirements should prioritize the IRF620PBF.

Thermal and Packaging Compatibility: Both devices support identical operating temperature ranges (-55°C to 150°C) and use compatible Through Hole TO-220 packaging. Thermal design considerations should account for the IRF620PBF's lower power dissipation rating (50W versus 52W).

Frequently Asked Questions (FAQ)

Q: Can the IRF620PBF directly replace the FQP4N25 in all applications?

A: Direct substitution depends on application voltage requirements. The IRF620PBF has a maximum Vdss of 200V, while the FQP4N25 is rated for 250V. Applications operating at voltages between 200V and 250V require design verification. The IRF620PBF is suitable for applications operating at 200V or below.

Q: What are the key electrical differences between these parts?

A: The IRF620PBF provides higher continuous drain current (5.2A versus 3.6A) and lower on-state resistance (0.8 Ohm versus 1.75 Ohm). The FQP4N25 offers higher voltage rating (250V versus 200V) and lower gate charge (5.6 nC versus 14 nC). The IRF620PBF has a lower maximum gate voltage (±20V versus ±30V).

Q: Are the packages physically compatible?

A: Both devices use Through Hole TO-220 packaging. The FQP4N25 is specified as TO-220-3, and the IRF620PBF is specified as TO-220AB, which is a compatible variant. Physical board layout and thermal management considerations remain identical.

Q: Why is the FQP4N25 listed as Obsolete?

A: The FQP4N25 is no longer in active production. The IRF620PBF, classified as Active, represents the current market alternative for N-Channel MOSFET applications in this voltage and current class.

Q: What compliance advantages does the IRF620PBF offer?

A: The IRF620PBF is ROHS3 Compliant, meeting current environmental regulations. The FQP4N25 is REACH Unaffected. Applications subject to ROHS or REACH compliance requirements should use the IRF620PBF.

Q: How do gate charge differences affect circuit design?

A: The IRF620PBF has higher gate charge (14 nC versus 5.6 nC). Applications with fast switching requirements or limited gate drive current capacity should account for the increased charge requirement. Gate drive circuits may require adjustment to maintain switching speed performance.

Q: Is the IRF620PBF suitable for high-temperature applications?

A: Both devices support identical operating temperature ranges (-55°C to 150°C). Thermal management design should account for the IRF620PBF's slightly lower power dissipation rating (50W versus 52W) when operating at elevated temperatures.