FQP47P06 Equivalent & Substitute Parts

Part Overview

The FQP47P06 is an onsemi P-Channel MOSFET rated for 60V drain-to-source voltage with 47A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is designed for power switching applications requiring moderate current handling with low on-resistance characteristics. The part is Active status and RoHS3 compliant, making it suitable for modern industrial and consumer electronics applications. Substitute parts are identified when equivalent electrical performance parameters and mechanical compatibility allow direct replacement in circuit designs.

Substiute Parts

FQP47P06
onsemiIn Stock: 15352FQP47P06 Datasheet
FQP47P06
Current Part
ATP113-TL-H
onsemiIn Stock: 2337ATP113-TL-H Datasheet
ATP113-TL-H
Similar
SPP80P06PHXKSA1
Infineon TechnologiesIn Stock: 4409SPP80P06PHXKSA1 Datasheet
SPP80P06PHXKSA1
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 47 A (Tc)
Rds On (Max) @ 23.5A, 10V 26 mOhm
Gate Charge (Qg) @ 10V 110 nC
Power Dissipation (Max) 160 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole
FET Type P-Channel -

Substitute Part Grouping Explanation

Substitution eligibility for the FQP47P06 is determined by the following critical parameters:

Primary Electrical Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 60V
  • FET Type: Must be P-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Continuous Drain Current (Id): Must support application requirements
  • On-Resistance (Rds On): Must be compatible with thermal and efficiency requirements

Mechanical Criteria:

  • Package/Case: TO-220-3 through-hole mounting preferred for direct PCB compatibility
  • Mounting Type: Through-hole or surface-mount depending on application constraints

Compliance Criteria:

  • RoHS3 Compliance: Required for regulatory alignment
  • Product Status: Active status preferred for long-term availability

Two substitute parts meet the electrical specifications for 60V P-Channel MOSFET applications:

  1. SPP80P06PHXKSA1 (Infineon Technologies): Exceeds current rating (80A vs. 47A), maintains TO-220-3 package, superior power dissipation capability (340W vs. 160W)

  2. ATP113-TL-H (onsemi): Reduced current rating (35A vs. 47A), surface-mount ATPAK package, lower power dissipation (50W vs. 160W)

Parameter Comparison

Parameter FQP47P06 SPP80P06PHXKSA1 ATP113-TL-H Unit
Manufacturer onsemi Infineon Technologies onsemi -
Drain to Source Voltage (Vdss) 60 60 60 V
FET Type P-Channel P-Channel P-Channel -
Continuous Drain Current (Id) @ 25°C 47 80 35 A
Rds On (Max) @ 10V 26 @ 23.5A 23 @ 64A 29.5 @ 18A mOhm
Gate Charge (Qg) @ 10V 110 173 55 nC
Power Dissipation (Max) 160 340 50 W (Tc)
Operating Temperature Range -55 to 175 -55 to 175 Up to 150 °C (TJ)
Package Type TO-220-3 TO-220-3 ATPAK -
Mounting Type Through Hole Through Hole Surface Mount -
RoHS3 Compliance Yes Yes Yes -
Product Status Active Active Active -

Engineering Selection Recommendations

SPP80P06PHXKSA1 (Infineon Technologies): This substitute is suitable for applications where the FQP47P06 is specified and higher current capacity or power dissipation margin is acceptable. The identical TO-220-3 package enables direct PCB footprint compatibility. The 80A continuous drain current rating provides 70% additional current headroom compared to the FQP47P06. Superior power dissipation capability (340W vs. 160W) accommodates higher thermal loads. Both devices maintain identical -55°C to 175°C operating temperature range and RoHS3 compliance. Gate charge is higher (173nC vs. 110nC), requiring consideration in high-frequency switching applications. On-resistance is lower (23mOhm vs. 26mOhm), improving efficiency. Active product status ensures long-term availability.

ATP113-TL-H (onsemi): This substitute is applicable only when the application current requirement does not exceed 35A continuous drain current. The surface-mount ATPAK package requires PCB redesign and is not compatible with through-hole TO-220-3 footprints. Lower power dissipation (50W vs. 160W) restricts use to lower-power applications. Gate charge is significantly lower (55nC vs. 110nC), beneficial for high-frequency switching circuits. Operating temperature maximum is reduced to 150°C, limiting thermal margin compared to FQP47P06. RoHS3 compliance and Active status are maintained. This part is suitable for space-constrained surface-mount designs with reduced current and power requirements.

Frequently Asked Questions (FAQ)

Q: Can SPP80P06PHXKSA1 directly replace FQP47P06 on existing PCBs?

A: Yes. Both devices use identical TO-220-3 through-hole package configuration. Pin assignments are compatible for P-Channel MOSFET applications. No PCB modification is required. The higher current rating (80A vs. 47A) and lower on-resistance (23mOhm vs. 26mOhm) provide performance improvement without circuit redesign.

Q: What are the limitations of ATP113-TL-H as a substitute?

A: ATP113-TL-H has three primary limitations: (1) Continuous drain current is reduced to 35A, making it unsuitable for applications requiring 47A; (2) Surface-mount ATPAK package is incompatible with TO-220-3 through-hole PCB footprints, requiring complete board redesign; (3) Maximum power dissipation is 50W versus 160W, restricting use to lower-power circuits.

Q: Are all three parts RoHS3 compliant?

A: Yes. FQP47P06, SPP80P06PHXKSA1, and ATP113-TL-H are all RoHS3 compliant. All three parts are REACH unaffected and classified as EAR99 for export control purposes.

Q: How does gate charge affect substitution suitability?

A: Gate charge (Qg) determines switching speed and driver circuit requirements. FQP47P06 has 110nC gate charge. SPP80P06PHXKSA1 has higher gate charge (173nC), requiring slightly longer switching times and potentially higher driver current. ATP113-TL-H has lower gate charge (55nC), enabling faster switching. For direct substitution in existing circuits, SPP80P06PHXKSA1 is preferred due to similar gate charge characteristics.

Q: What is the temperature operating range difference?

A: FQP47P06 and SPP80P06PHXKSA1 both operate from -55°C to 175°C (TJ). ATP113-TL-H maximum operating temperature is 150°C (TJ), providing 25°C less thermal margin. This limits ATP113-TL-H use in high-temperature environments.

Q: Which substitute offers the best on-resistance performance?

A: SPP80P06PHXKSA1 provides the lowest on-resistance at 23mOhm (measured at 64A, 10V), compared to FQP47P06 at 26mOhm (measured at 23.5A, 10V). Lower on-resistance reduces power dissipation and improves efficiency in switching applications.

Q: Can ATP113-TL-H be used in high-frequency switching circuits?

A: ATP113-TL-H is suitable for high-frequency applications due to its lower gate charge (55nC vs. 110nC for FQP47P06). Lower gate charge reduces switching losses and enables faster switching transitions. However, current rating limitation (35A vs. 47A) must be verified against application requirements.

Q: What inventory status should be considered for long-term supply?

A: FQP47P06 has 15,265 pieces in stock. SPP80P06PHXKSA1 has 4,300 pieces in stock. ATP113-TL-H has 2,300 pieces in stock. All three parts maintain Active product status, ensuring continued availability. SPP80P06PHXKSA1 offers the best balance of inventory depth and performance for direct substitution.

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