FQP3N80C Equivalent & Substitute Parts

Part Overview

The FQP3N80C is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with 3A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The FQP3N80C is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. Active alternatives with comparable electrical and mechanical specifications are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	3	A
On-State Resistance (Rds On) @ 1.5A, 10V	4.8	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	16.5	nC
Input Capacitance (Ciss) @ 25V	705	pF
Power Dissipation (Max)	107	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the FQP3N80C are selected based on strict electrical and mechanical compatibility criteria. All substitute devices must meet the following requirements:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 800V minimum
Continuous Drain Current (Id): 3A or greater at 25°C
Gate Drive Voltage: 10V
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Acceptable Variation Parameters:

On-State Resistance (Rds On): Within ±20% of 4.8 Ohm specification
Gate Threshold Voltage (Vgs(th)): 4V to 5V range
Gate Charge (Qg): Variations acceptable within device series specifications
Input Capacitance (Ciss): Variations acceptable within device series specifications
Power Dissipation: 70W or greater

Substitute parts are grouped by manufacturer and product status. Active products are prioritized over obsolete alternatives. All listed substitutes maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter	FQP3N80C (onsemi)	PJP3NA80_T0_00001 (Panjit)	STP2N80K5 (STMicroelectronics)	STP3NK80Z (STMicroelectronics)	STP4NK80Z (STMicroelectronics)
Manufacturer	onsemi	Panjit International Inc.	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Obsolete	Active	Active	Active	Active
Vdss (V)	800	800	800	800	800
Id @ 25°C (A)	3	3	2	2.5	3
Rds On @ Id, 10V (Ohm)	4.8 @ 1.5A	4.8 @ 1.5A	4.5 @ 1A	4.5 @ 1.25A	3.5 @ 1.5A
Vgs(th) @ 250µA (V)	5	4	5	4.5	4.5
Qg @ 10V (nC)	16.5	11	3	19	22.5
Ciss @ 25V (pF)	705	406	95	485	575
Power Dissipation (W)	107	106	45	70	80
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220AB	TO-220	TO-220	TO-220
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Primary Substitute: STP4NK80Z (STMicroelectronics)

The STP4NK80Z is the most direct electrical equivalent to the FQP3N80C. It matches the 800V Vdss rating and 3A continuous drain current specification. The STP4NK80Z features improved on-state resistance (3.5 Ohm vs. 4.8 Ohm), resulting in lower power dissipation and improved thermal performance. This device is active in production with full RoHS3 compliance and REACH unaffected status. The SuperMESH™ technology provides enhanced switching characteristics suitable for high-voltage applications.

Secondary Substitute: PJP3NA80_T0_00001 (Panjit International Inc.)

The PJP3NA80_T0_00001 provides electrical equivalence with identical Vdss (800V) and Id (3A) ratings. On-state resistance matches the FQP3N80C specification at 4.8 Ohm. This device is active in production with RoHS3 compliance. The lower gate charge (11 nC vs. 16.5 nC) and reduced input capacitance (406 pF vs. 705 pF) offer improved switching speed characteristics. Packaging is TO-220AB, which is mechanically compatible with TO-220-3 footprints.

Tertiary Substitute: STP3NK80Z (STMicroelectronics)

The STP3NK80Z provides a reduced-current alternative at 2.5A continuous drain current. This device is suitable for applications where the full 3A rating is not required. The 800V Vdss rating is maintained. On-state resistance is 4.5 Ohm at 1.25A. This device is active in production with full compliance certifications. The SuperMESH™ technology provides reliable switching performance.

Not Recommended: STP2N80K5 (STMicroelectronics)

The STP2N80K5 has a reduced continuous drain current rating of 2A, which falls below the FQP3N80C specification of 3A. While the 800V Vdss rating is maintained, the lower current capability makes this device unsuitable as a direct substitute for applications requiring the full 3A rating. This device is suitable only for applications with reduced current requirements.

Frequently Asked Questions (FAQ)

Q: Can the STP4NK80Z directly replace the FQP3N80C in existing designs?

A: Yes. The STP4NK80Z matches the critical electrical parameters: 800V Vdss, 3A continuous drain current, 10V gate drive voltage, and TO-220 package configuration. The improved on-state resistance (3.5 Ohm vs. 4.8 Ohm) provides enhanced performance. PCB layout and thermal management considerations remain unchanged.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: Both TO-220-3 and TO-220AB are through-hole packages with identical pin configurations and footprints. The designations refer to manufacturer-specific package naming conventions. Mechanical and electrical compatibility is maintained between these variants.

Q: Why does the STP2N80K5 have lower gate charge than the FQP3N80C?

A: Gate charge variation is a function of device design and manufacturing process. The STP2N80K5 operates at a lower continuous drain current (2A vs. 3A), which influences gate charge characteristics. Lower gate charge generally indicates faster switching speed but does not affect substitution compatibility when current ratings are adequate.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant and REACH unaffected. These certifications match the FQP3N80C compliance status and are suitable for applications with regulatory requirements.

Q: What is the significance of the SuperMESH™ technology in STMicroelectronics devices?

A: SuperMESH™ is a proprietary technology that improves on-state resistance and switching characteristics in high-voltage MOSFETs. Devices utilizing this technology provide enhanced performance compared to conventional designs. This technology is present in the STP3NK80Z and STP4NK80Z substitutes.

Q: Can the PJP3NA80_T0_00001 be used in high-frequency switching applications?

A: The PJP3NA80_T0_00001 has lower gate charge (11 nC) and input capacitance (406 pF) compared to the FQP3N80C, which supports faster switching transitions. This device is suitable for high-frequency applications within the specified operating parameters.

Q: What thermal considerations apply when substituting the FQP3N80C?

A: The FQP3N80C has a power dissipation rating of 107W. The STP4NK80Z has an 80W rating, and the PJP3NA80_T0_00001 has a 106W rating. Thermal management design should account for the specific power dissipation of the selected substitute. Lower on-state resistance in the STP4NK80Z reduces power dissipation in switching applications.

Q: Is the STP3NK80Z suitable for applications requiring continuous 3A operation?

A: No. The STP3NK80Z is rated for 2.5A continuous drain current, which is below the 3A requirement. This device is suitable only for applications with maximum continuous current requirements of 2.5A or less.

Q: What inventory availability should be considered for production planning?

A: The FQP3N80C has 20,660 pieces in stock (obsolete status). Active substitutes have varying availability: STP4NK80Z (6,318 pcs), STP3NK80Z (2,981 pcs), STP2N80K5 (2,195 pcs), and PJP3NA80_T0_00001 (1,100 pcs). Production planning should account for these inventory levels and active product status.

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