FQP3N60C Equivalent & Substitute Parts

Part Overview

The FQP3N60C is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 3A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is designed for high-voltage switching applications. The FQP3N60C carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	3	A (Tc)
Rds On (Max) @ Id, Vgs	3.4	Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14	nC @ 10V
Power Dissipation (Max)	75	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the FQP3N60C is based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 600V Vdss rating to ensure safe operation in the same circuit topology without exceeding voltage stress limits.

Current Handling: The substitute part must support continuous drain current at or above the 3A specification at 25°C. Higher current ratings provide design margin and are acceptable for direct substitution.

Gate Drive Voltage: Both parts operate with 10V drive voltage for maximum Rds On specification, ensuring compatibility with existing gate drive circuits.

Threshold Voltage: Gate threshold voltage specifications must be within compatible ranges to ensure proper switching behavior with the same control circuitry.

Package Configuration: Both parts utilize Through Hole TO-220 packaging, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heatsinking arrangements.

Temperature Operating Range: The substitute part must support the full operating temperature range or equivalent to maintain reliability across all application conditions.

Parameter Comparison

Parameter	FQP3N60C (onsemi)	STP4NK60Z (STMicroelectronics)	Unit
Drain to Source Voltage (Vdss)	600	600	V
Current - Continuous Drain (Id) @ 25°C	3	4	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	3.4 @ 1.5A, 10V	2 @ 2A, 10V	Ohm
Vgs(th) (Max) @ Id	4 @ 250µA	4.5 @ 50µA	V
Gate Charge (Qg) (Max) @ Vgs	14 @ 10V	26 @ 10V	nC
Vgs (Max)	±30	±30	V
Input Capacitance (Ciss) (Max) @ Vds	565 @ 25V	510 @ 25V	pF
Power Dissipation (Max)	75	70	W (Tc)
Operating Temperature (TJ)	-55 to 150	150	°C
Package / Case	TO-220-3	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	-

Engineering Selection Recommendations

FQP3N60C (onsemi): This part carries an Obsolete product status. While 15,226 pieces remain in current inventory, long-term procurement availability is not assured. This device is suitable for existing designs requiring exact part number compliance or legacy system maintenance.

STP4NK60Z (STMicroelectronics): This part maintains Active product status with 45,200 pieces in inventory, providing superior long-term availability and supply chain continuity. The STP4NK60Z is ROHS3 compliant and REACH unaffected, matching the regulatory compliance profile of the FQP3N60C. The higher continuous drain current rating (4A versus 3A) and lower on-resistance (2Ohm @ 2A, 10V versus 3.4Ohm @ 1.5A, 10V) provide improved thermal performance and reduced power dissipation in switching applications. The STP4NK60Z is suitable for new designs and as a direct replacement in existing applications where the FQP3N60C is becoming unavailable.

Both parts share identical voltage ratings (600V Vdss), compatible gate drive requirements (10V), and identical package configurations (TO-220-3 Through Hole). The STP4NK60Z offers enhanced electrical performance characteristics while maintaining full mechanical and thermal interface compatibility.

Frequently Asked Questions (FAQ)

Q: Can the STP4NK60Z directly replace the FQP3N60C in existing designs?

A: Yes. Both devices share identical 600V Vdss ratings, 10V gate drive voltage specifications, and TO-220-3 Through Hole packaging. The STP4NK60Z's higher current rating (4A versus 3A) and lower on-resistance provide improved performance margins without requiring circuit modifications.

Q: What is the primary reason for substitution?

A: The FQP3N60C carries an Obsolete product status. The STP4NK60Z maintains Active status with significantly higher inventory availability (45,200 pieces versus 15,226 pieces), ensuring long-term procurement reliability.

Q: Are there thermal management differences between these parts?

A: The STP4NK60Z exhibits lower on-resistance (2Ohm @ 2A, 10V) compared to the FQP3N60C (3.4Ohm @ 1.5A, 10V), resulting in reduced power dissipation during switching operations. Both parts are rated for 70-75W maximum power dissipation and utilize identical TO-220-3 packaging with equivalent thermal interface characteristics.

Q: Do both parts meet the same regulatory compliance standards?

A: Yes. Both the FQP3N60C and STP4NK60Z are ROHS3 compliant and REACH unaffected, meeting identical environmental and regulatory requirements.

Q: What is the impact of the higher gate charge specification in the STP4NK60Z?

A: The STP4NK60Z specifies 26 nC gate charge at 10V compared to 14 nC for the FQP3N60C. This parameter affects gate drive circuit design and switching speed. Existing gate drive circuits designed for the FQP3N60C will operate the STP4NK60Z with slightly increased switching transition times but without functional incompatibility.

Q: Are the operating temperature ranges equivalent?

A: The FQP3N60C specifies -55°C to 150°C (TJ). The STP4NK60Z specifies 150°C (TJ) maximum. For applications requiring operation below 0°C, the FQP3N60C's extended lower temperature rating must be verified against specific application requirements.

Q: What packaging considerations apply to both parts?

A: Both devices utilize Through Hole TO-220-3 packaging. PCB footprints, lead spacing, and heatsink mounting interfaces are identical, requiring no layout modifications for substitution.

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