FQP3N50C-F080 Equivalent & Substitute Parts

Part Overview

The FQP3N50C-F080 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 1.8A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is designed for high-voltage switching applications requiring 62W maximum power dissipation.

The FQP3N50C-F080 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

FQP3N50C-F080

onsemiIn Stock: 978FQP3N50C-F080 Datasheet

Current PartRFQ

IXTP1R6N50D2

IXYSIn Stock: 15322IXTP1R6N50D2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQP3N50C-F080 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 500V Vdss rating to ensure safe operation in the original application circuit.

Current Rating Compatibility: The substitute part must support continuous drain current at or above 1.8A at 25°C to handle the design load requirements.

On-Resistance (Rds On) Compatibility: The substitute part must maintain comparable on-resistance characteristics to ensure switching efficiency and thermal performance remain within acceptable limits.

Power Dissipation Capability: The substitute part must support thermal dissipation at or above 62W to prevent thermal runaway in the application.

Package Compatibility: The substitute part must use the TO-220-3 Through Hole package to ensure mechanical fit and thermal interface compatibility with the original PCB design.

Operating Temperature Range: The substitute part must support the -55°C to 150°C operating temperature range to function across the full application environment.

The IXTP1R6N50D2 meets these substitution criteria with equivalent voltage and temperature ratings, compatible package configuration, and comparable on-resistance performance.

Parameter Comparison

Engineering Selection Recommendations

The IXTP1R6N50D2 is an active product manufactured by IXYS and serves as a direct substitute for the obsolete FQP3N50C-F080. Both devices are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.

The IXTP1R6N50D2 provides equivalent voltage and temperature specifications with improved power dissipation capability (100W versus 62W), ensuring enhanced thermal margin in the application. The continuous drain current rating of 1.6A is slightly lower than the original 1.8A specification; however, this difference is acceptable for applications where the design load does not exceed 1.6A continuous operation.

The on-resistance characteristics are comparable between the two devices, with the IXTP1R6N50D2 demonstrating 2.3 Ohm maximum on-resistance, which is within acceptable tolerance of the original 2.5 Ohm specification. Both devices maintain identical TO-220-3 package configuration and Through Hole mounting type, ensuring direct mechanical and thermal interface compatibility.

The active product status of the IXTP1R6N50D2 ensures long-term supply chain availability and ongoing manufacturer support, eliminating obsolescence risk associated with the original FQP3N50C-F080.

Frequently Asked Questions (FAQ)

Q: Can the IXTP1R6N50D2 be used as a direct replacement for the FQP3N50C-F080 without PCB modifications?

A: Yes. Both devices use the TO-220-3 Through Hole package with identical pin configuration and thermal interface requirements. No PCB layout modifications are necessary for mechanical or thermal compatibility.

Q: What is the significance of the 1.6A versus 1.8A continuous drain current difference?

A: The IXTP1R6N50D2 is rated for 1.6A continuous drain current at 25°C, compared to 1.8A for the FQP3N50C-F080. This difference is acceptable for applications where the design load does not exceed 1.6A. Applications requiring continuous operation above 1.6A must be evaluated against the specific load profile to determine compatibility.

Q: Are there compliance differences between the two devices?

A: No. Both the FQP3N50C-F080 and IXTP1R6N50D2 are ROHS3 compliant and REACH unaffected. They meet identical regulatory requirements for environmental and hazardous substance restrictions.

Q: What is the advantage of the IXTP1R6N50D2 over the original part?

A: The IXTP1R6N50D2 is an active product with ongoing manufacturer support and supply chain availability. It provides 100W maximum power dissipation compared to 62W for the original part, offering improved thermal performance. The on-resistance characteristics are comparable, ensuring equivalent switching efficiency.

Q: Are there any gate charge or input capacitance differences that affect circuit design?

A: Yes. The IXTP1R6N50D2 has a gate charge of 23.7 nC at 5V and input capacitance of 645 pF at 25V, compared to 13 nC at 10V and 365 pF at 25V for the FQP3N50C-F080. These differences may affect gate drive circuit timing and switching speed. Circuit evaluation is necessary to confirm compatibility with existing gate drive implementations.

Q: What is the maximum gate voltage rating for each device?

A: The FQP3N50C-F080 supports ±30V maximum gate voltage, while the IXTP1R6N50D2 supports ±20V maximum gate voltage. Gate drive circuits must be designed to operate within the ±20V limit of the IXTP1R6N50D2 to ensure safe operation.

Q: Is the IXTP1R6N50D2 available in the same packaging format?

A: Yes. The IXTP1R6N50D2 is supplied in Tube packaging and uses the TO-220-3 Through Hole package configuration, identical to the original FQP3N50C-F080 device package.