FQP33N10L N-Channel MOSFET 100V 33A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FQP33N10L is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 33A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the QFET® series. The part is currently classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support and production continuity. Equivalent parts must maintain the same voltage rating, current capability, and package configuration while meeting the electrical performance requirements of the original design.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	33	A
On-State Resistance (Rds On) @ 16.5A, 10V	52	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 5V	40	nC
Power Dissipation (Max)	127	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FQP33N10L is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 100V
Continuous Drain Current (Id) @ 25°C: Must be greater than or equal to 33A
Package/Case: Must be TO-220-3 or TO-220AB (mechanically compatible through-hole variants)
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Must encompass -55°C to 175°C

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 52mOhm @ comparable current and voltage are acceptable
Gate Threshold Voltage (Vgs(th)): Must not exceed ±20V maximum gate voltage specification
Gate Charge (Qg): Lower values reduce switching losses; values below 110nC are preferred
Power Dissipation: Higher ratings provide design margin

Substitute parts are grouped into three categories based on current rating alignment: direct equivalents (33A nominal), higher-current alternatives (36A–42A), and high-current variants (57A–100A). All listed substitutes maintain the 100V voltage rating and through-hole TO-220 package family.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Pd Max (W)	Package	Status
FQP33N10L	onsemi	100	33	52 @ 16.5A, 10V	2 @ 250µA	40 @ 5V	127	TO-220-3	Obsolete
IRF540NPBF	Infineon Technologies	100	33	44 @ 16A, 10V	4 @ 250µA	71 @ 10V	130	TO-220AB	Active
IRL540NPBF	Infineon Technologies	100	36	44 @ 18A, 10V	2 @ 250µA	74 @ 5V	140	TO-220AB	Active
IRF1310NPBF	Infineon Technologies	100	42	36 @ 22A, 10V	4 @ 250µA	110 @ 10V	160	TO-220AB	Active
PHP18NQ10T,127	Nexperia USA Inc.	100	18	90 @ 9A, 10V	4 @ 1mA	21 @ 10V	79	TO-220AB	Obsolete
PSMN009-100P,127	NXP Semiconductors	100	75	8.8 @ 25A, 10V	4 @ 1mA	156 @ 10V	230	TO-220AB	Active
PSMN013-100PS,127	Nexperia USA Inc.	100	68	13.9 @ 15A, 10V	4 @ 1mA	59 @ 10V	170	TO-220AB	Obsolete
PSMN015-100P,127	Nexperia USA Inc.	100	75	15 @ 25A, 10V	4 @ 1mA	90 @ 10V	300	TO-220AB	Obsolete
PSMN016-100PS,127	Nexperia USA Inc.	100	57	16 @ 15A, 10V	4 @ 1mA	49 @ 10V	148	TO-220AB	Obsolete
PSMN027-100PS,127	Nexperia USA Inc.	100	37	26.8 @ 15A, 10V	4 @ 1mA	30 @ 10V	103	TO-220AB	Obsolete
PSMN5R6-100PS,127	Nexperia USA Inc.	100	100	5.6 @ 25A, 10V	4 @ 1mA	141 @ 10V	306	TO-220AB	Obsolete

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Choice):

The IRF540NPBF from Infineon Technologies is the most suitable direct substitute for the FQP33N10L. Both devices share identical 100V/33A ratings and TO-220AB package compatibility. The IRF540NPBF exhibits superior on-state resistance (44mOhm versus 52mOhm), higher power dissipation capability (130W versus 127W), and maintains active product status with RoHS3 compliance. The device is available in high inventory quantities (85,300 units), ensuring supply continuity.

Secondary Equivalent (Higher Current Margin):

The IRL540NPBF provides a 36A continuous drain current rating with comparable electrical characteristics and active product status. This device offers a 9% current margin above the FQP33N10L specification while maintaining the same voltage rating and package form factor. RoHS3 compliance and active status support long-term availability.

Higher-Current Alternatives:

The IRF1310NPBF (42A) and PSMN027-100PS,127 (37A) provide increased current headroom for applications requiring design margin. Both maintain 100V voltage rating and TO-220AB package compatibility. The IRF1310NPBF is active and RoHS3 compliant, while PSMN027-100PS,127 is obsolete but available in inventory.

High-Current Variants (Design Margin Applications):

The PSMN009-100P,127 (75A), PSMN013-100PS,127 (68A), PSMN015-100P,127 (75A), PSMN016-100PS,127 (57A), and PSMN5R6-100PS,127 (100A) are suitable for applications requiring substantial current margin or thermal headroom. These devices maintain the 100V voltage specification and TO-220AB package but are classified as obsolete. The PSMN009-100P,127 is active and available in inventory (2,800 units).

Compliance Considerations:

All active-status substitutes (IRF540NPBF, IRL540NPBF, IRF1310NPBF, PSMN009-100P,127) are RoHS3 compliant and REACH unaffected, meeting modern regulatory requirements. Obsolete parts retain REACH unaffected status but lack RoHS3 certification.

Frequently Asked Questions (FAQ)

Q: Can the FQP33N10L be directly replaced with the IRF540NPBF?

A: Yes. Both devices are rated for 100V/33A operation in TO-220 package variants. The IRF540NPBF offers improved on-state resistance and higher power dissipation capability. Mechanical and electrical compatibility is confirmed. Pin configuration is identical in the TO-220 family.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: TO-220-3 and TO-220AB are mechanically compatible through-hole package variants used for three-terminal power devices. Both feature identical pin spacing and mounting hole patterns, allowing direct PCB substitution. The designations reflect different manufacturer naming conventions for the same physical package.

Q: Are there current rating limitations when substituting with higher-rated devices?

A: No. Devices rated above 33A (such as the 36A IRL540NPBF or 42A IRF1310NPBF) are fully compatible substitutes. Higher current ratings provide design margin and do not create compatibility issues. Gate drive requirements and switching characteristics remain within acceptable ranges for the FQP33N10L application circuit.

Q: Why is the FQP33N10L classified as obsolete?

A: The FQP33N10L is an older onsemi QFET® series device. Manufacturer product lines are periodically discontinued in favor of newer technology generations. Active alternatives from Infineon (HEXFET® series) and Nexperia (TrenchMOS™ series) offer equivalent or superior performance with ongoing manufacturing support.

Q: Which substitute offers the lowest on-state resistance?

A: The PSMN5R6-100PS,127 exhibits the lowest on-state resistance at 5.6mOhm @ 25A, 10V. This device is rated for 100A continuous drain current and provides maximum thermal performance. However, it is classified as obsolete. Among active-status devices, the PSMN009-100P,127 offers 8.8mOhm @ 25A, 10V with 75A current rating.

Q: Can I use a lower-current device as a substitute?

A: No. The PHP18NQ10T,127 is rated for only 18A continuous drain current, which is below the FQP33N10L specification of 33A. Using an undersized device creates risk of thermal stress and potential failure under rated load conditions. Substitutes must meet or exceed the original 33A rating.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver power dissipation. The FQP33N10L specifies 40nC @ 5V. Substitutes with higher gate charge (such as IRF1310NPBF at 110nC @ 10V) require slightly longer switching times but remain compatible with standard gate driver circuits. Lower gate charge values reduce switching losses in high-frequency applications.

Q: Are RoHS3 compliance and REACH status critical for substitution?

A: RoHS3 compliance and REACH unaffected status are regulatory requirements for new designs and production in most markets. All active-status substitutes meet these standards. Obsolete parts retain REACH unaffected status but lack RoHS3 certification, limiting their use in new production unless exemptions apply.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation ratings vary among substitutes (127W for FQP33N10L to 306W for PSMN5R6-100PS,127). Higher power dissipation ratings provide thermal margin in applications with elevated ambient temperatures or continuous high-current operation. PCB thermal design and heatsinking requirements remain unchanged across substitutes in the same package family.

Q: Is gate threshold voltage (Vgs(th)) variation significant?

A: The FQP33N10L specifies 2V @ 250µA, while most substitutes specify 4V @ 1mA. This difference reflects different measurement conditions rather than incompatibility. Both values fall within the ±20V maximum gate voltage specification. Standard gate driver circuits (5V or 10V logic) operate both devices reliably.

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