FQP32N20C N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQP32N20C is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 28A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the QFET® series. The FQP32N20C is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Substiute Parts

FQP32N20C
onsemiIn Stock: 15524FQP32N20C Datasheet
FQP32N20C
Current Part
FQP19N20-T
onsemiIn Stock: 717FQP19N20-T Datasheet
FQP19N20-T
MFR Recommended
RCX330N25
Rohm SemiconductorIn Stock: 1313RCX330N25 Datasheet
RCX330N25
Direct
IRFB4620PBF
Infineon TechnologiesIn Stock: 9203IRFB4620PBF Datasheet
IRFB4620PBF
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IRFB5620PBF
Infineon TechnologiesIn Stock: 26699IRFB5620PBF Datasheet
IRFB5620PBF
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IXTP32N20T
IXYSIn Stock: 811IXTP32N20T Datasheet
IXTP32N20T
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PHP33NQ20T,127
Nexperia USA Inc.In Stock: 11471PHP33NQ20T,127 Datasheet
PHP33NQ20T,127
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STP20NF20
STMicroelectronicsIn Stock: 2087STP20NF20 Datasheet
STP20NF20
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STP30NF20
STMicroelectronicsIn Stock: 15362STP30NF20 Datasheet
STP30NF20
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Key Parameters

Parameter FQP32N20C Unit
Drain-to-Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 28 A (Tc)
On-State Resistance (Rds On) @ Id, Vgs 82 mOhm @ 14A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 110 nC @ 10V
Power Dissipation (Max) 156 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FQP32N20C is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
  • Continuous Drain Current (Id): Must equal or exceed 28A at 25°C
  • On-State Resistance (Rds On): Lower or equivalent values preferred for thermal performance
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
  • Package Type: TO-220-3 or compatible through-hole variants (TO-220AB, TO-220FM)
  • Operating Temperature Range: Must support -55°C to 150°C minimum
  • Compliance: RoHS3 compliance required

Substitute parts are grouped into three categories based on electrical alignment:

Direct Manufacturer Substitute (MFR Recommended): FQP19N20-T from onsemi maintains the same voltage rating and package but with reduced current rating (19.4A). This part is active and suitable for applications with lower current demands.

Similar Performance Substitutes: IRFB4620PBF, IRFB5620PBF, IXTP32N20T, PHP33NQ20T,127, and STP30NF20 provide equivalent or superior electrical performance within the 200V class. These parts maintain 25A to 32.7A current ratings and are housed in compatible TO-220 variants.

Extended Voltage Rating Substitute: RCX330N25 from Rohm Semiconductor offers higher voltage capability (250V) with increased current (33A) in a TO-220FM package, suitable for applications requiring additional voltage margin.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Pd Max (W) Tj Range (°C) Package Status
FQP32N20C onsemi 200 28 82 @ 14A, 10V 4 @ 250µA 110 @ 10V 156 -55 to 150 TO-220-3 Obsolete
FQP19N20-T onsemi 200 19.4 150 @ 9.7A, 10V 5 @ 250µA 40 @ 10V 140 -55 to 150 TO-220-3 Active
RCX330N25 Rohm Semiconductor 250 33 40 (Tc) TO-220FM Active
IRFB4620PBF Infineon Technologies 200 25 72.5 @ 15A, 10V 5 @ 100µA 38 @ 10V 144 -55 to 175 TO-220AB Active
IRFB5620PBF Infineon Technologies 200 25 72.5 @ 15A, 10V 5 @ 100µA 38 @ 10V 144 -55 to 175 TO-220AB Active
IXTP32N20T IXYS 200 32 72 @ 16A, 10V 4.5 @ 250µA 38 @ 10V 200 -55 to 175 TO-220-3 Active
PHP33NQ20T,127 Nexperia USA Inc. 200 32.7 77 @ 15A, 10V 4 @ 1mA 32.2 @ 10V 230 -55 to 175 TO-220AB Obsolete
STP20NF20 STMicroelectronics 200 18 125 @ 10A, 10V 4 @ 250µA 39 @ 10V 110 -55 to 175 TO-220 Active
STP30NF20 STMicroelectronics 200 30 75 @ 15A, 10V 4 @ 250µA 38 @ 10V 125 -55 to 150 TO-220 Active

Engineering Selection Recommendations

For Direct Replacement (Same Manufacturer): FQP19N20-T is the onsemi manufacturer-recommended substitute. This part maintains identical voltage rating (200V) and package type (TO-220-3) with active product status. Selection of FQP19N20-T is appropriate for applications where the reduced current rating (19.4A versus 28A) is acceptable. The higher on-state resistance (150 mOhm versus 82 mOhm) results in increased power dissipation and thermal considerations.

For Performance-Matched Substitution: IXTP32N20T from IXYS provides the closest electrical match to the FQP32N20C, with 32A current rating, 200V voltage rating, and superior power dissipation capability (200W). This part is active and RoHS3 compliant. The TO-220-3 package maintains mechanical compatibility with existing PCB layouts.

For Current-Rated Substitution: STP30NF20 from STMicroelectronics delivers 30A continuous current at 200V with active product status and RoHS3 compliance. This part is suitable for applications requiring current capacity near the original specification. Operating temperature range extends to 175°C, exceeding the FQP32N20C minimum of 150°C.

For Enhanced Voltage Margin: RCX330N25 from Rohm Semiconductor provides 250V rating with 33A current capacity. This part is active and RoHS3 compliant. The TO-220FM package is mechanically compatible with standard TO-220-3 footprints. Selection is appropriate for applications requiring additional voltage headroom beyond 200V.

Compliance Considerations: All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, matching the original FQP32N20C certification requirements. Obsolete parts (PHP33NQ20T,127) should be avoided for new designs despite superior electrical specifications.

Frequently Asked Questions (FAQ)

Q: Can FQP19N20-T directly replace FQP32N20C in all applications?

A: FQP19N20-T is the manufacturer-recommended substitute but operates at reduced current capacity (19.4A versus 28A). Direct replacement is valid only when application current demand does not exceed 19.4A. The higher on-state resistance increases power dissipation, requiring thermal analysis for designs operating near maximum current.

Q: What is the difference between TO-220-3, TO-220AB, and TO-220FM packages?

A: All three are through-hole packages with identical pin configurations and mechanical footprints suitable for standard TO-220 PCB layouts. TO-220-3 is the standard variant. TO-220AB and TO-220FM are manufacturer-specific designations for the same physical package. Mechanical compatibility is confirmed across all variants.

Q: Is IXTP32N20T a suitable replacement for the FQP32N20C?

A: Yes. IXTP32N20T matches the FQP32N20C current rating (32A) and voltage rating (200V) with superior power dissipation (200W versus 156W). The part is active, RoHS3 compliant, and housed in a compatible TO-220-3 package. Operating temperature range extends to 175°C, exceeding the original specification.

Q: Why is RCX330N25 listed as a substitute despite higher voltage rating?

A: RCX330N25 provides functional substitution for applications where higher voltage margin is beneficial. The 250V rating accommodates transient overvoltage conditions while maintaining 33A current capacity. This part is active and RoHS3 compliant. Selection is appropriate when voltage headroom is a design requirement.

Q: Should obsolete parts like PHP33NQ20T,127 be used in new designs?

A: No. Obsolete parts present supply chain risk and should not be selected for new designs. Active alternatives such as IXTP32N20T and STP30NF20 provide equivalent or superior performance with confirmed long-term availability and manufacturer support.

Q: How do on-state resistance differences affect thermal performance?

A: Lower on-state resistance (Rds On) reduces power dissipation at given current levels. The FQP32N20C exhibits 82 mOhm at 14A, while IXTP32N20T shows 72 mOhm at 16A. Lower resistance values reduce junction temperature rise and improve thermal margin. Thermal analysis is required when substituting parts with significantly different Rds On values.

Q: Are gate charge differences significant for circuit design?

A: Gate charge (Qg) affects gate drive circuit requirements and switching speed. The FQP32N20C requires 110 nC at 10V, while active substitutes range from 32.2 nC to 40 nC. Lower gate charge reduces drive power and improves switching performance. Existing gate drive circuits typically accommodate this variation without modification.

Q: What compliance certifications are maintained across all substitutes?

A: All recommended active substitutes maintain RoHS3 compliance and REACH unaffected status, matching the FQP32N20C certifications. ECCN and HTSUS classifications remain consistent across all parts, confirming regulatory equivalence for procurement and export purposes.

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