FQP2NA90 Equivalent & Substitute Parts

Part Overview

The FQP2NA90 is an N-Channel MOSFET manufactured by onsemi, rated for 900V drain-to-source voltage with 2.8A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The FQP2NA90 is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor while offering active product status and current availability.

Key Parameters

Parameter	FQP2NA90	Unit
Drain-to-Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	2.8	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	5.8 @ 1.4A, 10V	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 @ 250µA	V
Gate Charge (Qg Max) @ Vgs	20 @ 10V	nC
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ Vds	680 @ 25V	pF
Power Dissipation (Max)	107	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitute parts for the FQP2NA90 are selected based on the following critical parameters that determine functional equivalence:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (Vdss): Minimum 900V (higher ratings acceptable)
Continuous Drain Current (Id): Minimum 2.8A at 25°C (higher ratings acceptable)
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C (TJ)
Gate Drive Voltage: 10V maximum Rds On specification

Substitution Logic: Parts are grouped into two categories based on voltage rating alignment:

900V Voltage Class Substitutes (STP2NK90Z, STP3NK90Z): These devices maintain the exact 900V Vdss rating of the original FQP2NA90, ensuring direct voltage compatibility. The STP3NK90Z offers higher current capability (3A vs 2.8A), while STP2NK90Z provides slightly lower current (2.1A) but maintains the same voltage class.
1000V Voltage Class Substitutes (IXTP2N100, IXTP2N100P): These devices operate at 1000V Vdss, providing 100V additional voltage margin. Both are rated for 2A continuous drain current, which is lower than the original 2.8A specification but acceptable for applications where the full current is not required.

All substitute parts share the same TO-220-3 package, identical operating temperature range, and compatible gate drive specifications at 10V.

Parameter Comparison

Parameter	FQP2NA90	STP3NK90Z	STP2NK90Z	IXTP2N100	IXTP2N100P	Unit
Manufacturer	onsemi	STMicroelectronics	STMicroelectronics	IXYS	IXYS	-
Vdss	900	900	900	1000	1000	V
Id @ 25°C	2.8	3	2.1	2	2	A (Tc)
Rds On (Max) @ Id, Vgs	5.8 @ 1.4A, 10V	4.8 @ 1.5A, 10V	6.5 @ 1.05A, 10V	7 @ 1A, 10V	7.5 @ 500mA, 10V	Ohm
Vgs(th) (Max) @ Id	5 @ 250µA	4.5 @ 50µA	4.5 @ 50µA	4.5 @ 250µA	4.5 @ 100µA	V
Qg (Max) @ Vgs	20 @ 10V	22.7 @ 10V	27 @ 10V	40 @ 10V	24.3 @ 10V	nC
Vgs (Max)	±30	±30	±30	±20	±20	V
Ciss (Max) @ Vds	680 @ 25V	590 @ 25V	485 @ 25V	825 @ 25V	655 @ 25V	pF
Power Dissipation (Max)	107	90	70	100	86	W (Tc)
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	-
Product Status	Obsolete	Active	Active	Active	Active	-
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

STP3NK90Z (STMicroelectronics) is the primary substitute for the FQP2NA90. This device maintains the 900V voltage rating and exceeds the original 2.8A current specification with 3A capability. The STP3NK90Z features lower on-state resistance (4.8Ohm vs 5.8Ohm), reduced gate charge (22.7nC vs 20nC), and active product status with ROHS3 compliance. The ±30V maximum gate voltage specification matches the original device, ensuring compatibility with existing gate drive circuits.

STP2NK90Z (STMicroelectronics) provides an alternative within the 900V voltage class. While rated for 2.1A continuous drain current (lower than the original 2.8A), this device is suitable for applications where full current capacity is not required. The STP2NK90Z offers lower input capacitance (485pF vs 680pF) and reduced gate charge (27nC), which may benefit high-frequency switching applications. Active product status and ROHS3 compliance are provided.

IXTP2N100 (IXYS) operates at 1000V Vdss with 2A continuous drain current. This substitute is appropriate for applications requiring higher voltage margin but where the 2A current rating is sufficient. The higher gate charge specification (40nC vs 20nC) and increased input capacitance (825pF vs 680pF) require evaluation for gate drive circuit compatibility. Maximum gate voltage is limited to ±20V, which may restrict use in circuits designed for ±30V operation.

IXTP2N100P (IXYS) is a Polar series variant of the IXTP2N100, rated for 1000V with 2A continuous drain current and 86W power dissipation. This device features reduced gate charge (24.3nC) and lower input capacitance (655pF) compared to the standard IXTP2N100, offering improved switching characteristics. The ±20V maximum gate voltage specification applies to this variant as well.

All substitute parts are active products with current manufacturing status and REACH compliance. Selection should be based on application requirements for voltage margin, current capacity, switching frequency, and gate drive circuit specifications.

Frequently Asked Questions (FAQ)

Q: Can the STP3NK90Z directly replace the FQP2NA90 in existing designs?

A: Yes. The STP3NK90Z maintains the 900V Vdss rating, exceeds the 2.8A current requirement with 3A capability, and uses the identical TO-220-3 package. The ±30V maximum gate voltage specification matches the original device. Pin configuration and thermal characteristics are compatible with existing PCB layouts and heat sink assemblies.

Q: What is the difference between the 900V and 1000V substitute options?

A: The 900V substitutes (STP3NK90Z, STP2NK90Z) maintain the exact voltage rating of the FQP2NA90, providing direct electrical compatibility. The 1000V substitutes (IXTP2N100, IXTP2N100P) provide 100V additional voltage margin, which may be beneficial in applications with voltage transients or design margin requirements. However, 1000V devices are rated for 2A continuous drain current, which is lower than the original 2.8A specification.

Q: Are there gate drive circuit compatibility concerns with the IXYS substitutes?

A: Yes. The IXTP2N100 and IXTP2N100P are rated for ±20V maximum gate voltage, compared to ±30V for the FQP2NA90 and STMicroelectronics alternatives. If the original design uses gate drive circuits capable of ±30V operation, the IXYS devices must be evaluated to ensure gate voltage does not exceed ±20V limits. Additionally, the higher gate charge specification (40nC for IXTP2N100) requires verification that the gate drive circuit can supply adequate current for the intended switching frequency.

Q: Which substitute offers the best thermal performance?

A: The STP3NK90Z provides the highest power dissipation rating at 90W (Tc), compared to 107W for the original FQP2NA90. The STP2NK90Z is rated for 70W, while the IXYS devices are rated for 100W (IXTP2N100) and 86W (IXTP2N100P). Thermal performance depends on application duty cycle, switching frequency, and heat sink design. The lower on-state resistance of the STP3NK90Z (4.8Ohm vs 5.8Ohm) results in reduced conduction losses.

Q: What is the significance of the gate charge (Qg) parameter in selecting a substitute?

A: Gate charge determines the energy required to switch the MOSFET on and off. The FQP2NA90 specifies 20nC at 10V. The STP3NK90Z (22.7nC) and STP2NK90Z (27nC) have slightly higher gate charge, while the IXTP2N100 (40nC) requires significantly more gate charge. Higher gate charge increases switching losses and requires higher gate drive current. Gate drive circuits must be evaluated to ensure adequate current sourcing and sinking capability at the intended switching frequency.

Q: Are all substitute parts RoHS compliant?

A: The STMicroelectronics substitutes (STP3NK90Z, STP2NK90Z) and IXYS substitutes (IXTP2N100, IXTP2N100P) are all ROHS3 compliant. The original FQP2NA90 does not specify RoHS status. All substitute parts are REACH unaffected and classified under ECCN EAR99 with HTSUS code 8541.29.0095.

Q: Can the STP2NK90Z be used in applications requiring the full 2.8A current of the FQP2NA90?

A: No. The STP2NK90Z is rated for 2.1A continuous drain current at 25°C, which is 0.7A lower than the FQP2NA90 specification. Applications requiring sustained operation at 2.8A must use the STP3NK90Z (3A rating) or evaluate the application duty cycle to confirm that peak current does not exceed 2.1A during normal operation.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use the TO-220-3 through-hole package, identical to the FQP2NA90. Pin configuration and mechanical dimensions are compatible with existing PCB designs. Thermal interface materials and heat sink mounting are unchanged. No PCB layout modifications are required for package compatibility.

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