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FQP2N90 Equivalent & Substitute Parts
Part Overview
The FQP2N90 is an N-Channel 900V MOSFET manufactured by onsemi, housed in a Through Hole TO-220-3 package. This device is rated for 2.2A continuous drain current and 85W power dissipation. The FQP2N90 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, gate threshold voltage, and on-state resistance specifications while accommodating packaging and mounting type variations.
Substiute Parts
Key Parameters
| Parameter | FQP2N90 Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 900 | V |
| Current - Continuous Drain (Id) @ 25°C | 2.2 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2 | Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 5 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 | nC @ 10V |
| Vgs (Max) | ±30 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 | pF @ 25V |
| Power Dissipation (Max) | 85 | W (Tc) |
| Operating Temperature | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | - |
| Package / Case | TO-220-3 | - |
| Product Status | Obsolete | - |
Substitute Part Grouping Explanation
Substitute parts for the FQP2N90 are grouped based on electrical and mechanical compatibility criteria. The primary substitution logic is determined by the following parameters:
Critical Electrical Parameters:
- Drain to Source Voltage (Vdss): Substitute parts must equal or exceed 900V
- Continuous Drain Current (Id): Substitute parts must equal or exceed 2.2A at 25°C
- On-State Resistance (Rds On): Substitute parts must not significantly exceed 7.2 Ohm at rated conditions
- Gate Threshold Voltage (Vgs(th)): Substitute parts must be compatible with 5V maximum specification
- Maximum Gate Voltage (Vgs Max): Substitute parts must support ±30V or greater
Mechanical Parameters:
- Mounting Type: Through Hole substitutes maintain direct pin compatibility; Surface Mount substitutes (FQD2N90TM) require circuit board redesign
- Package Type: TO-220-3 packages are directly interchangeable; DPAK packages require layout modification
Compliance Parameters:
- RoHS3 Compliance: All substitute parts maintain RoHS3 compliance
- Operating Temperature Range: All substitute parts support -55°C to 150°C (TJ)
Parameter Comparison
| Parameter | FQP2N90 | FQD2N90TM | IXTP2N100 | IXTP2N100P | STP2NK90Z | STP3NK90Z | Unit |
|---|---|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | IXYS | IXYS | STMicroelectronics | STMicroelectronics | - |
| Drain to Source Voltage (Vdss) | 900 | 900 | 1000 | 1000 | 900 | 900 | V |
| Current - Continuous Drain (Id) @ 25°C | 2.2 | 1.7 | 2 | 2 | 2.1 | 3 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2 @ 1.1A, 10V | 7.2 @ 850mA, 10V | 7 @ 1A, 10V | 7.5 @ 500mA, 10V | 6.5 @ 1.05A, 10V | 4.8 @ 1.5A, 10V | Ohm |
| Vgs(th) (Max) @ Id | 5 @ 250µA | 5 @ 250µA | 4.5 @ 250µA | 4.5 @ 100µA | 4.5 @ 50µA | 4.5 @ 50µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 15 @ 10V | 15 @ 10V | 40 @ 10V | 24.3 @ 10V | 27 @ 10V | 22.7 @ 10V | nC |
| Vgs (Max) | ±30 | ±30 | ±20 | ±20 | ±30 | ±30 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 @ 25V | 500 @ 25V | 825 @ 25V | 655 @ 25V | 485 @ 25V | 590 @ 25V | pF |
| Power Dissipation (Max) | 85 (Tc) | 50 (Tc) | 100 (Tc) | 86 (Tc) | 70 (Tc) | 90 (Tc) | W |
| Operating Temperature | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-252-3 (DPAK) | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | - |
| Product Status | Obsolete | Active | Active | Active | Active | Active | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | - |
Engineering Selection Recommendations
Direct Through-Hole Substitutes (Pin-Compatible):
The STP3NK90Z and STP2NK90Z from STMicroelectronics are direct Through-Hole TO-220-3 substitutes. Both devices maintain the 900V Vdss rating and support the ±30V Vgs maximum specification. The STP3NK90Z provides superior current handling at 3A continuous drain current with improved on-state resistance of 4.8 Ohm, making it suitable for applications requiring higher current capacity. The STP2NK90Z offers 2.1A continuous drain current with 6.5 Ohm on-state resistance, closely matching the FQP2N90 electrical profile. Both parts are Active products with ROHS3 compliance and full operating temperature range support.
The IXTP2N100 and IXTP2N100P from IXYS are Through-Hole TO-220-3 substitutes with elevated Vdss ratings of 1000V, providing additional voltage margin. Both devices support 2A continuous drain current. The IXTP2N100 features 7 Ohm on-state resistance and 40 nC gate charge. The IXTP2N100P (Polar series) provides 7.5 Ohm on-state resistance with reduced gate charge of 24.3 nC. Both are Active products with ROHS3 compliance. The higher Vdss rating introduces increased input capacitance (825 pF and 655 pF respectively) compared to the FQP2N90 (500 pF), which may affect switching speed in gate-drive-limited applications.
Surface-Mount Alternative:
The FQD2N90TM from onsemi is an Active product offering identical electrical specifications to the FQP2N90 (900V Vdss, 7.2 Ohm Rds On, 15 nC gate charge) but in a Surface Mount TO-252-3 (DPAK) package. This substitute requires circuit board redesign and is suitable only for new designs or board revisions. The FQD2N90TM supports 1.7A continuous drain current, which is lower than the FQP2N90 specification and may limit application scope. Power dissipation is rated at 50W (Tc), lower than the FQP2N90 (85W), requiring thermal analysis for high-power applications.
Compliance and Product Status:
All substitute parts maintain ROHS3 compliance and REACH Unaffected status, matching the FQP2N90 regulatory profile. All substitute parts are classified as Active products, ensuring long-term availability and manufacturing support. The FQP2N90 obsolete status necessitates migration to one of these Active alternatives for production continuity.
Frequently Asked Questions (FAQ)
Q: Can the STP3NK90Z directly replace the FQP2N90 in existing circuit boards?
A: Yes. The STP3NK90Z is a direct pin-compatible Through-Hole TO-220-3 substitute. No circuit board modifications are required. The STP3NK90Z maintains the same 900V Vdss rating and ±30V Vgs maximum specification. The improved on-state resistance (4.8 Ohm versus 7.2 Ohm) and higher current rating (3A versus 2.2A) provide enhanced performance without circuit changes.
Q: What is the difference between IXTP2N100 and IXTP2N100P?
A: Both devices are Through-Hole TO-220-3 substitutes with 1000V Vdss and 2A continuous drain current. The IXTP2N100 features 7 Ohm on-state resistance and 40 nC gate charge. The IXTP2N100P (Polar series) provides 7.5 Ohm on-state resistance with lower gate charge of 24.3 nC. The IXTP2N100P is optimized for applications where reduced gate charge is beneficial for switching speed. Both are pin-compatible with the FQP2N90.
Q: Why does the FQD2N90TM have lower continuous drain current (1.7A) than the FQP2N90 (2.2A)?
A: The FQD2N90TM is a Surface Mount DPAK package device, which has different thermal characteristics than the Through-Hole TO-220-3 package. The DPAK package has lower thermal dissipation capability, resulting in a lower continuous drain current rating. The FQD2N90TM is suitable only for applications requiring 1.7A or less continuous drain current.
Q: Are the IXYS substitutes compatible with the ±30V gate voltage specification of the FQP2N90?
A: No. The IXTP2N100 and IXTP2N100P both specify a maximum gate voltage of ±20V, which is lower than the FQP2N90 specification of ±30V. Applications requiring ±30V gate drive capability must use the STP2NK90Z, STP3NK90Z, or FQD2N90TM, which all support ±30V Vgs maximum.
Q: What is the impact of higher input capacitance in the IXYS substitutes?
A: The IXTP2N100 features 825 pF input capacitance and the IXTP2N100P features 655 pF, compared to 500 pF in the FQP2N90. Higher input capacitance increases gate charge requirements and may slow switching speed in gate-drive-limited applications. Applications with high switching frequency or limited gate drive current should prioritize substitutes with lower input capacitance, such as the STP2NK90Z (485 pF) or FQD2N90TM (500 pF).
Q: Can the FQD2N90TM be used in new designs if the FQP2N90 is obsolete?
A: The FQD2N90TM is suitable for new Surface Mount designs only. It requires circuit board redesign and is not a direct replacement for existing Through-Hole applications. The FQD2N90TM supports only 1.7A continuous drain current, which may be insufficient for applications designed around the FQP2N90 2.2A specification. For new designs, evaluate all substitute options based on specific current, voltage, and thermal requirements.
Q: Which substitute provides the best on-state resistance performance?
A: The STP3NK90Z provides the lowest on-state resistance at 4.8 Ohm (measured at 1.5A, 10V), compared to 7.2 Ohm for the FQP2N90. This results in lower conduction losses and reduced heat generation. The STP3NK90Z is the optimal choice for applications prioritizing efficiency and thermal performance.
Q: Are all substitute parts available in the same packaging options as the FQP2N90?
A: No. The FQP2N90 is available in Through-Hole TO-220-3 packaging. The STP2NK90Z, STP3NK90Z, IXTP2N100, and IXTP2N100P are available in Through-Hole TO-220-3 packaging and are directly interchangeable. The FQD2N90TM is available only in Surface Mount TO-252-3 (DPAK) packaging and requires board redesign.
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