FQP2N80 Equivalent & Substitute Parts

Part Overview

The FQP2N80 is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with a continuous drain current of 2.4A at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is designed for high-voltage switching applications. The FQP2N80 is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support and procurement continuity.

Substiute Parts

FQP2N80

onsemiIn Stock: 1991FQP2N80 Datasheet

Current PartRFQ

STP3NK80Z

STMicroelectronicsIn Stock: 3032STP3NK80Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQP2N80 is determined by strict equivalence across the following critical parameters:

Voltage Rating: Both the main part and substitute must maintain an 800V Vdss rating to ensure compatibility in high-voltage switching circuits.

Current Rating: The substitute must support a continuous drain current of 2.4A or greater at 25°C to handle the same load conditions.

On-State Resistance (Rds On): The substitute's maximum on-state resistance must not exceed the original specification to maintain thermal performance and switching efficiency.

Gate Threshold Voltage: The substitute must operate within compatible gate threshold voltage ranges to ensure proper gate drive compatibility.

Package Type: The substitute must use a Through Hole TO-220 package variant to maintain mechanical and thermal interface compatibility.

Operating Temperature Range: The substitute must support the full -55°C to 150°C operating temperature range.

Compliance Status: The substitute must maintain RoHS3 compliance and REACH unaffected status for regulatory continuity.

The STP3NK80Z from STMicroelectronics meets all these criteria and is classified as an active product, providing long-term availability and support.

Parameter Comparison

Engineering Selection Recommendations

The STP3NK80Z is the qualified substitute for the FQP2N80 based on the following engineering criteria:

Voltage and Current Equivalence: Both devices maintain identical 800V Vdss ratings and support continuous drain currents within 0.1A of each other (2.4A vs. 2.5A), ensuring direct functional compatibility in high-voltage switching applications.

On-State Performance: The STP3NK80Z exhibits superior on-state resistance characteristics (4.5Ohm vs. 6.3Ohm), resulting in lower conduction losses and improved thermal efficiency. This represents a performance enhancement over the original part.

Regulatory Compliance: Both devices maintain RoHS3 compliance and REACH unaffected status, ensuring continuity of regulatory requirements across design revisions and procurement cycles.

Product Status Advantage: The STP3NK80Z is classified as an active product with confirmed inventory availability (2981 pieces), whereas the FQP2N80 is obsolete. This transition ensures long-term supply chain stability and technical support.

Thermal Characteristics: While the STP3NK80Z has a lower maximum power dissipation rating (70W vs. 85W), the superior on-state resistance results in lower actual power dissipation under typical operating conditions, making it suitable for equivalent thermal management designs.

Package Compatibility: Both devices use Through Hole TO-220-3 packaging, maintaining mechanical and thermal interface compatibility with existing PCB designs and heat sink assemblies.

Frequently Asked Questions (FAQ)

Q: Can the STP3NK80Z directly replace the FQP2N80 in existing designs?

A: Yes. Both devices share identical voltage ratings (800V Vdss), compatible current ratings (2.4A vs. 2.5A), matching operating temperature ranges (-55°C to 150°C), and identical TO-220-3 package configurations. The STP3NK80Z exhibits improved on-state resistance, making it a performance-equivalent or superior substitute.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are: (1) Rds On is lower in the STP3NK80Z (4.5Ohm vs. 6.3Ohm), resulting in reduced conduction losses; (2) Gate threshold voltage is slightly lower (4.5V vs. 5V); (3) Maximum power dissipation is lower (70W vs. 85W); (4) Product status differs, with STP3NK80Z being active and FQP2N80 obsolete. These differences favor the STP3NK80Z for new designs and replacements.

Q: Are there any gate drive considerations when switching from FQP2N80 to STP3NK80Z?

A: Both devices operate with identical maximum gate voltages (±30V) and similar gate threshold voltage ranges. Gate drive circuits designed for the FQP2N80 will function with the STP3NK80Z without modification. The slightly lower gate threshold voltage of the STP3NK80Z (4.5V vs. 5V) may result in marginally faster switching response.

Q: Does the STP3NK80Z fit the same PCB footprint as the FQP2N80?

A: Yes. Both devices use Through Hole TO-220-3 packaging, which maintains identical pin configurations and mechanical dimensions. No PCB layout modifications are required for this substitution.

Q: What is the impact of the lower power dissipation rating on thermal design?

A: The STP3NK80Z has a lower maximum power dissipation rating (70W vs. 85W). However, due to its superior on-state resistance (4.5Ohm vs. 6.3Ohm), actual power dissipation under typical operating conditions is lower. Thermal designs based on the FQP2N80 will operate with improved thermal margins when using the STP3NK80Z.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the FQP2N80 and STP3NK80Z are RoHS3 compliant and REACH unaffected, ensuring regulatory continuity in applications subject to these compliance requirements.

Q: Why is the FQP2N80 listed as obsolete?

A: The FQP2N80 is classified as obsolete by onsemi, indicating that the manufacturer has discontinued active production and support. The STP3NK80Z from STMicroelectronics is an active product with confirmed long-term availability, making it the recommended choice for new designs and ongoing production support.