FQP2N60C Equivalent & Substitute Parts

Part Overview

The FQP2N60C is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 2A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is designed for high-voltage switching applications. The FQP2N60C carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	2	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	4.7	Ohm @ 1A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12	nC @ 10V
Power Dissipation (Max)	54	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the FQP2N60C is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 600V
Continuous Drain Current (Id) must meet or exceed 2A at 25°C
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V @ 250µA specification
Maximum Gate Voltage (Vgs Max) must accommodate ±30V operation
Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

Package must be Through Hole TO-220-3 or equivalent footprint
Mounting type must be Through Hole

Regulatory Compliance:

RoHS3 compliance required
ECCN classification EAR99

The IRFBC20PBF from Vishay Siliconix meets these substitution criteria with equivalent voltage ratings, compatible current specifications, and identical thermal operating range within the specified parameters.

Parameter Comparison

Parameter	FQP2N60C (onsemi)	IRFBC20PBF (Vishay Siliconix)	Unit
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	600	600	V
Continuous Drain Current (Id) @ 25°C	2	2.2	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	4.7 @ 1A, 10V	4.4 @ 1.3A, 10V	Ohm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	12 @ 10V	18 @ 10V	nC
Power Dissipation (Max)	54	50	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-220-3	TO-220-3	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

FQP2N60C (onsemi): This device carries Obsolete product status. While 20,525 units remain in stock, long-term procurement availability is not assured. Selection of this part is limited to applications requiring existing inventory or legacy system maintenance.

IRFBC20PBF (Vishay Siliconix): This device carries Active product status with 3,313 units in current inventory. The IRFBC20PBF provides equivalent electrical performance with the following distinctions:

Continuous drain current rating of 2.2A exceeds the FQP2N60C specification of 2A
Rds On value of 4.4 Ohm is lower than the FQP2N60C at 4.7 Ohm, indicating improved on-state performance
Gate charge of 18 nC is higher than the FQP2N60C at 12 nC
Power dissipation rating of 50W is lower than the FQP2N60C at 54W
Maximum gate voltage rating of ±20V is lower than the FQP2N60C at ±30V

Both devices are RoHS3 compliant and classified under ECCN EAR99. The IRFBC20PBF is suitable for direct substitution in applications where the specified electrical parameters are within design margins.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC20PBF directly replace the FQP2N60C in existing designs?

A: The IRFBC20PBF is electrically compatible for applications operating within the specified parameter ranges. Both devices share identical 600V Vdss rating, compatible gate threshold voltage, and identical operating temperature range. The IRFBC20PBF provides higher continuous drain current (2.2A vs. 2A) and lower on-state resistance (4.4 Ohm vs. 4.7 Ohm). However, the IRFBC20PBF has a lower maximum gate voltage rating (±20V vs. ±30V) and higher gate charge (18 nC vs. 12 nC). Designs must verify these differences fall within application requirements.

Q: Are the TO-220-3 and TO-220AB packages mechanically interchangeable?

A: Both the FQP2N60C and IRFBC20PBF use Through Hole TO-220 package variants. The TO-220-3 and TO-220AB designations refer to the same physical footprint and pin configuration. These packages are mechanically and electrically interchangeable for PCB mounting purposes.

Q: What is the significance of the gate charge difference between these devices?

A: Gate charge (Qg) affects switching speed and gate drive circuit requirements. The FQP2N60C specifies 12 nC while the IRFBC20PBF specifies 18 nC at 10V. Higher gate charge requires more energy from the gate drive circuit to switch the device. Applications with high-frequency switching or limited gate drive capability must account for this parameter difference.

Q: Why does the FQP2N60C have a higher power dissipation rating despite lower current?

A: Power dissipation ratings reflect the maximum thermal capability of the device package and die design, not solely current handling. The FQP2N60C is rated for 54W while the IRFBC20PBF is rated for 50W. This difference reflects different thermal characteristics of the respective manufacturers' designs. Actual power dissipation in an application depends on operating current, on-state resistance, and switching losses.

Q: What compliance certifications apply to both devices?

A: Both the FQP2N60C and IRFBC20PBF are RoHS3 compliant and classified under ECCN EAR99. The FQP2N60C carries REACH Unaffected status while the IRFBC20PBF carries REACH Affected status. Applications subject to REACH regulations must account for this distinction.

Q: Is the IRFBC20PBF suitable for applications requiring ±30V gate voltage?

A: No. The IRFBC20PBF specifies a maximum gate voltage of ±20V, which is lower than the FQP2N60C specification of ±30V. Applications requiring ±30V gate voltage operation must use the FQP2N60C or identify alternative devices with equivalent ±30V ratings.

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