FQP2N60 Equivalent & Substitute Parts

Part Overview

The FQP2N60 is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 2.4A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220-3 configuration and is designed for general-purpose switching applications requiring high voltage capability. The FQP2N60 is classified as obsolete, necessitating identification of equivalent substitute components for new designs and ongoing production support. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	2.4	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	4.7	Ohm @ 1.2A, 10V
Power Dissipation (Max)	64	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package / Case	TO-220-3	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the FQP2N60 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Current - Continuous Drain (Id) @ 25°C: 2.2A or greater
Drive Voltage (Max Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-220-3 or compatible TO-220 variant
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 4.7 Ohm or lower
Vgs(th) (Max) @ Id: 4V or lower
Gate Charge (Qg) (Max) @ Vgs: 18 nC or lower
Input Capacitance (Ciss) (Max) @ Vds: 350 pF or lower

The identified substitute parts meet or exceed these criteria within the specified electrical and thermal operating envelope.

Parameter Comparison

Parameter	FQP2N60	IRFBC20PBF	STP3NK60Z
Manufacturer	onsemi	Vishay Siliconix	STMicroelectronics
Product Status	Obsolete	Active	Not For New Designs
Drain to Source Voltage (Vdss)	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	2.4 A	2.2 A	2.4 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	4.7 Ohm @ 1.2A, 10V	4.4 Ohm @ 1.3A, 10V	3.6 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	4 V @ 250µA	4.5 V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V	18 nC @ 10 V	11.8 nC @ 10 V
Vgs (Max)	±30 V	±20 V	±30 V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V	350 pF @ 25 V	311 pF @ 25 V
Power Dissipation (Max)	64 W	50 W	45 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)

Engineering Selection Recommendations

IRFBC20PBF (Vishay Siliconix)

The IRFBC20PBF is classified as Active product status, making it the preferred substitute for new designs and ongoing production. This device meets all primary substitution criteria with 600V Vdss rating and 2.2A continuous drain current. The IRFBC20PBF is RoHS3 Compliant and REACH Affected. Gate charge is elevated at 18 nC compared to the FQP2N60 at 11 nC, and Vgs (Max) is limited to ±20V versus ±30V on the original part. Power dissipation is rated at 50W, lower than the FQP2N60 at 64W. These differences require thermal and gate drive circuit evaluation for specific applications. Packaging is TO-220AB, compatible with TO-220-3 footprints.

STP3NK60Z (STMicroelectronics)

The STP3NK60Z is classified as Not For New Designs, limiting its suitability for new product development. However, it provides an alternative for legacy system support and replacement applications. This device matches the FQP2N60 in continuous drain current at 2.4A and maintains 600V Vdss rating. The STP3NK60Z demonstrates superior on-resistance performance at 3.6 Ohm (Max) compared to 4.7 Ohm on the FQP2N60, resulting in lower power dissipation at 45W. Gate charge is 11.8 nC, closely aligned with the original part. The STP3NK60Z is RoHS3 Compliant and REACH Unaffected. Vgs (Max) is ±30V, matching the FQP2N60 specification. Input capacitance is reduced to 311 pF versus 350 pF on the original device.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC20PBF directly replace the FQP2N60 in all applications?

A: The IRFBC20PBF meets the primary electrical substitution criteria of 600V Vdss and 2.2A continuous drain current. However, three parameters differ: gate charge is 18 nC versus 11 nC on the FQP2N60, Vgs (Max) is ±20V versus ±30V, and power dissipation is 50W versus 64W. Applications requiring gate drive circuits optimized for lower gate charge or operating at gate voltages exceeding ±20V require circuit verification. Thermal design must account for the reduced power dissipation rating.

Q: Why is the STP3NK60Z marked as Not For New Designs?

A: The STP3NK60Z carries a Not For New Designs product status designation from STMicroelectronics. This classification indicates the manufacturer is not recommending this device for new product development. The device remains available for legacy system support and replacement applications where existing designs are already qualified on this component.

Q: Are the TO-220AB and TO-220-3 packages mechanically compatible?

A: The TO-220AB and TO-220-3 packages are mechanically compatible for Through Hole mounting applications. Both packages use the same three-lead configuration and pin spacing, allowing direct PCB footprint compatibility. Thermal performance and lead geometry are equivalent for standard mounting practices.

Q: What is the impact of gate charge differences between these devices?

A: Gate charge differences affect gate drive circuit design and switching speed. The FQP2N60 and STP3NK60Z both specify 11 nC gate charge at 10V, while the IRFBC20PBF specifies 18 nC. Higher gate charge requires greater gate drive current or longer switching times. Applications with high-frequency switching or current-limited gate drive circuits must evaluate whether the IRFBC20PBF gate charge specification remains within design margins.

Q: Can these devices be used interchangeably in high-temperature applications?

A: All three devices specify identical operating temperature ranges of -55°C to 150°C. Interchangeability in high-temperature applications depends on thermal design and power dissipation requirements. The STP3NK60Z offers the lowest power dissipation at 45W, followed by the IRFBC20PBF at 50W, and the FQP2N60 at 64W. Applications operating near maximum junction temperature must account for these differences in thermal management design.

Q: What compliance certifications differ between the substitute parts?

A: The IRFBC20PBF is RoHS3 Compliant and REACH Affected. The STP3NK60Z is RoHS3 Compliant and REACH Unaffected. The FQP2N60 is REACH Unaffected. Applications subject to REACH regulations must verify compliance requirements for the selected substitute. All three devices carry ECCN EAR99 and HTSUS 8541.29.0095 classifications.

Q: How does on-resistance affect device selection?

A: On-resistance directly impacts power dissipation and thermal performance. The STP3NK60Z specifies 3.6 Ohm (Max) on-resistance, the IRFBC20PBF specifies 4.4 Ohm (Max), and the FQP2N60 specifies 4.7 Ohm (Max). Lower on-resistance reduces conduction losses and heat generation. Applications with continuous current operation or thermal constraints benefit from the STP3NK60Z lower on-resistance specification, provided the Not For New Designs status is acceptable for the application.

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