FQP2N50 Equivalent & Substitute Parts

Part Overview

The FQP2N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with a continuous drain current of 2.1A at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is designed for high-voltage switching applications. The FQP2N50 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part belongs to the QFET® series and operates across a temperature range of -55°C to 150°C.

Substiute Parts

FQP2N50

onsemiIn Stock: 1162FQP2N50 Datasheet

Current PartRFQ

IXTP08N50D2

IXYSIn Stock: 15525IXTP08N50D2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQP2N50 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 500V Vdss rating to ensure safe operation in the same circuit topology without risk of breakdown.

Package Compatibility: Both the main part and substitute must use the TO-220-3 Through Hole package to ensure mechanical fit and thermal management characteristics remain consistent.

Current Handling: The substitute part's continuous drain current rating must be evaluated against the application's actual current requirements. The FQP2N50 provides 2.1A; substitutes with lower current ratings require circuit-level verification.

On-State Resistance (Rds On): This parameter directly affects power dissipation and switching losses. Variations in Rds On between parts alter thermal performance and efficiency.

Operating Temperature Range: The substitute must support the full -55°C to 150°C operating range to maintain reliability across all environmental conditions.

FET Type and Technology: Both parts must be N-Channel MOSFETs to maintain circuit functionality and gate drive compatibility.

The IXTP08N50D2 is identified as a substitute based on matching voltage rating, package type, FET type, and technology. However, the current rating differential (800mA versus 2.1A) and on-state resistance characteristics require engineering evaluation for specific applications.

Parameter Comparison

Engineering Selection Recommendations

For Active Production Designs: The IXTP08N50D2 is classified as Active product status, providing long-term availability and supply chain stability compared to the obsolete FQP2N50. This substitution is appropriate for new designs or redesigns requiring component continuity.

For Existing Applications: The FQP2N50 is obsolete; however, the IXTP08N50D2 substitution requires circuit-level analysis due to the reduced continuous drain current rating (800mA versus 2.1A). Applications operating at or near the FQP2N50's 2.1A rating cannot use the IXTP08N50D2 without circuit modification.

Compliance Considerations: Both parts carry REACH Unaffected status and EAR99 ECCN classification. The IXTP08N50D2 is RoHS3 Compliant, providing additional environmental compliance assurance for regulated applications.

Thermal Management: Both parts support identical operating temperature ranges (-55°C to 150°C). The IXTP08N50D2 offers slightly higher power dissipation capability (60W versus 55W), providing marginal thermal headroom improvement.

Gate Drive Compatibility: The FQP2N50 requires 10V gate drive for specified Rds On performance, while the IXTP08N50D2 is a depletion-mode device with different gate drive characteristics. Gate drive circuit compatibility must be verified before substitution.

Frequently Asked Questions (FAQ)

Q: Can the IXTP08N50D2 directly replace the FQP2N50 in all applications?

A: Direct replacement is not universal. Both parts share the same 500V voltage rating, TO-220-3 package, and operating temperature range. However, the IXTP08N50D2 has a maximum continuous drain current of 800mA compared to the FQP2N50's 2.1A. Applications requiring current above 800mA cannot use this substitute without circuit redesign. Additionally, the IXTP08N50D2 is a depletion-mode device, requiring verification of gate drive circuit compatibility.

Q: What is the primary reason for substituting the FQP2N50?

A: The FQP2N50 is classified as obsolete. The IXTP08N50D2 is an active product with confirmed long-term availability, making it suitable for new designs or production continuity when current requirements do not exceed 800mA.

Q: Are there package compatibility concerns between these parts?

A: Both parts use the TO-220-3 Through Hole package. Mechanical fit and PCB layout compatibility are identical. Thermal interface requirements (heatsink mounting) are equivalent.

Q: How do the on-state resistance characteristics compare?

A: The FQP2N50 specifies Rds On of 5.3 Ohm at 1.05A and 10V gate drive. The IXTP08N50D2 specifies 4.6 Ohm at 400mA and 0V gate drive. These measurements are taken at different operating points, making direct comparison difficult. Application-specific power dissipation analysis is required.

Q: What compliance advantages does the IXTP08N50D2 offer?

A: The IXTP08N50D2 is RoHS3 Compliant, providing environmental compliance certification not explicitly stated for the FQP2N50. Both parts are REACH Unaffected and carry EAR99 ECCN classification.

Q: Is gate drive circuit modification necessary for substitution?

A: The FQP2N50 is an enhancement-mode MOSFET requiring positive gate voltage for operation. The IXTP08N50D2 is a depletion-mode device with different gate drive requirements. Gate drive circuit compatibility must be verified before substitution to ensure proper device operation and prevent circuit malfunction.