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FQP2N30 Equivalent & Substitute Parts
Part Overview
The FQP2N30 is an N-Channel MOSFET manufactured by onsemi, rated for 300V drain-to-source voltage with a continuous drain current of 2.1A at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is part of the QFET® series. The FQP2N30 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the through-hole mounting requirement.
Substiute Parts
Key Parameters
| Parameter | FQP2N30 |
|---|---|
| Drain to Source Voltage (Vdss) | 300 V |
| Continuous Drain Current (Id) @ 25°C | 2.1 A |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 1.05A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Operating Temperature Range | -55°C to 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitution of the FQP2N30 is based on the following critical electrical and mechanical parameters:
Voltage Rating Compatibility: The substitute part must maintain a Drain to Source Voltage (Vdss) rating of 300V to ensure safe operation in circuits designed for the FQP2N30.
Current Capacity: The substitute part must support a continuous drain current rating equal to or greater than 2.1A at 25°C to handle the design load without thermal stress.
Thermal Performance: The substitute part must support a power dissipation rating of at least 40W to accommodate the thermal requirements of the application.
Gate Charge Characteristics: The substitute part must have gate charge specifications compatible with the drive circuitry, with consideration for switching speed and driver capability.
Mounting Configuration: The substitute part must be available in a through-hole package (TO-220 or TO-220-3) to maintain mechanical compatibility with existing PCB layouts.
Operating Temperature Range: The substitute part must support the full operating temperature range of -55°C to 150°C.
The STP12NK30Z from STMicroelectronics meets these substitution criteria with enhanced electrical performance characteristics.
Parameter Comparison
| Parameter | FQP2N30 (onsemi) | STP12NK30Z (STMicroelectronics) | Compatibility Notes |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | Identical |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Identical |
| Drain to Source Voltage (Vdss) | 300 V | 300 V | Identical |
| Continuous Drain Current (Id) @ 25°C | 2.1 A | 9 A | Substitute exceeds requirement |
| Drive Voltage (Max Rds On) | 10 V | 10 V | Identical |
| Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 1.05A, 10V | 400 mOhm @ 4.5A, 10V | Substitute has lower on-resistance |
| Vgs(th) (Max) @ Id | 5 V @ 250µA | 4.5 V @ 50µA | Substitute has lower threshold voltage |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V | 35 nC @ 10 V | Substitute requires higher gate charge |
| Vgs (Max) | ±30 V | ±30 V | Identical |
| Power Dissipation (Max) | 40 W | 90 W | Substitute exceeds requirement |
| Operating Temperature Range | -55°C to 150°C | -55°C to 150°C | Identical |
| Mounting Type | Through Hole | Through Hole | Identical |
| Package / Case | TO-220-3 | TO-220-3 | Identical |
| Product Status | Obsolete | Active | Substitute is in active production |
Engineering Selection Recommendations
STP12NK30Z as Primary Substitute
The STP12NK30Z from STMicroelectronics is a direct substitute for the FQP2N30. Both devices share identical voltage ratings (300V Vdss), identical operating temperature ranges (-55°C to 150°C), and compatible through-hole TO-220-3 packaging. The STP12NK30Z exceeds the electrical requirements of the FQP2N30 with a continuous drain current rating of 9A compared to 2.1A, and a power dissipation rating of 90W compared to 40W.
Product Status Advantage
The STP12NK30Z holds Active product status, ensuring ongoing availability and manufacturing support. This contrasts with the FQP2N30's Obsolete classification, which restricts future procurement options and technical support.
Compliance and Certification
The STP12NK30Z is RoHS3 Compliant and maintains REACH Unaffected status, consistent with the FQP2N30's REACH Unaffected designation. Both devices carry EAR99 ECCN classification and identical HTSUS codes (8541.29.0095), confirming regulatory alignment.
Electrical Performance Considerations
The STP12NK30Z demonstrates superior electrical characteristics with lower on-resistance (400 mOhm at 4.5A versus 3.7 Ohm at 1.05A) and lower gate threshold voltage (4.5V at 50µA versus 5V at 250µA). The substitute requires higher gate charge (35 nC versus 5 nC), which may necessitate evaluation of gate drive circuitry but does not preclude substitution in standard applications.
Frequently Asked Questions (FAQ)
Q: Can the STP12NK30Z directly replace the FQP2N30 in existing designs?
A: Yes. Both devices share identical voltage ratings (300V), operating temperature ranges (-55°C to 150°C), and TO-220-3 packaging. The STP12NK30Z exceeds the current and power dissipation requirements of the FQP2N30, making it electrically compatible for direct substitution in through-hole applications.
Q: What is the significance of the higher continuous drain current rating in the STP12NK30Z?
A: The STP12NK30Z is rated for 9A continuous drain current compared to the FQP2N30's 2.1A. This higher rating provides design margin and thermal headroom in applications operating at or near the FQP2N30's current limits. Designs operating below 2.1A experience no adverse effects from this increased rating.
Q: Does the higher gate charge of the STP12NK30Z affect circuit operation?
A: The STP12NK30Z requires 35 nC of gate charge compared to the FQP2N30's 5 nC. This difference affects switching speed and gate drive power requirements. Existing gate drive circuits must be evaluated to confirm adequate current sourcing capability. In most standard applications with conventional gate drivers, this difference is accommodated without circuit modification.
Q: Are there packaging differences between these devices?
A: Both the FQP2N30 and STP12NK30Z use TO-220-3 through-hole packaging. No PCB layout modifications are required for mechanical compatibility. The STP12NK30Z is supplied in Tube packaging format for inventory management.
Q: What is the impact of the lower on-resistance in the STP12NK30Z?
A: The STP12NK30Z exhibits lower on-resistance (400 mOhm at 4.5A) compared to the FQP2N30 (3.7 Ohm at 1.05A). Lower on-resistance reduces conduction losses and heat generation, improving overall circuit efficiency. This represents a performance enhancement with no negative impact on FQP2N30 replacement applications.
Q: Why is the FQP2N30 classified as Obsolete?
A: Obsolete classification indicates that the FQP2N30 is no longer in active production. Existing inventory may be available through authorized distributors, but long-term procurement cannot be guaranteed. The STP12NK30Z, with Active product status, provides assured future availability for new designs and ongoing production requirements.
Q: Are there compliance or regulatory differences between these devices?
A: Both devices maintain REACH Unaffected status and carry identical EAR99 ECCN classifications. The STP12NK30Z adds RoHS3 Compliance certification. Both devices are suitable for applications with equivalent regulatory requirements.
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