FQP22N30 Equivalent & Substitute Parts

Part Overview

The FQP22N30 is an N-Channel MOSFET manufactured by onsemi, rated for 300V drain-to-source voltage with 21A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for power switching applications requiring moderate voltage and current ratings.

The FQP22N30 carries an Obsolete product status, indicating that onsemi has discontinued this component. Identifying equivalent and substitute parts is necessary to maintain design continuity, support existing systems, and facilitate new designs where similar electrical and mechanical characteristics are required.

Substiute Parts

FQP22N30

onsemiIn Stock: 15531FQP22N30 Datasheet

Current PartRFQ

NTP165N65S3H

onsemiIn Stock: 1377NTP165N65S3H Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQP22N30 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Package Type: TO-220-3 through-hole mounting (mechanical and thermal interface)
• FET Type: N-Channel configuration (functional requirement)
• Drain-to-Source Voltage (Vdss): Minimum 300V (voltage rating must equal or exceed the original specification)
• Continuous Drain Current (Id): Minimum 21A at 25°C (current capacity must equal or exceed the original specification)
• Operating Temperature Range: -55°C to 150°C (thermal operating window)
• Gate Drive Voltage: 10V maximum (standard gate drive compatibility)

Secondary Compatibility Parameters:

• On-state resistance (Rds On), gate threshold voltage (Vgs(th)), gate charge (Qg), and input capacitance (Ciss) influence performance characteristics but do not prevent substitution when primary criteria are met
• Power dissipation capability must support the intended application thermal requirements

The NTP165N65S3H is identified as a substitute part. Although it features a higher Vdss rating (650V) and slightly lower continuous current (19A), it maintains the same TO-220-3 package, N-Channel configuration, and operating temperature range. The higher voltage rating provides design margin for applications where the FQP22N30 was used in lower-voltage circuits.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement Applications:

The NTP165N65S3H serves as a functional substitute for the FQP22N30 in applications where the original device is no longer available. Both devices share identical TO-220-3 packaging, N-Channel configuration, and operating temperature specifications. The NTP165N65S3H maintains ROHS3 compliance and REACH unaffected status, consistent with the original part.

Voltage Rating Consideration:

The NTP165N65S3H features a 650V Vdss rating compared to the FQP22N30's 300V rating. This higher voltage rating is compatible with applications originally designed for 300V operation, as the substitute device can withstand higher transient voltages and provides additional design margin. No circuit modification is required for voltage compatibility.

Current Rating Consideration:

The NTP165N65S3H provides 19A continuous drain current versus the FQP22N30's 21A rating. In applications where the full 21A capacity of the original device is required, thermal management and circuit design must be evaluated to confirm the 19A rating is sufficient. The difference of 2A represents approximately 10% reduction in current capacity.

Product Status:

The FQP22N30 is classified as Obsolete, while the NTP165N65S3H is classified as Not For New Designs. For new designs, neither part is recommended by onsemi. For legacy system support and replacement applications, the NTP165N65S3H provides continuity with established supply chains and proven reliability.

Frequently Asked Questions (FAQ)

Q: Can the NTP165N65S3H directly replace the FQP22N30 in existing circuit boards?

A: Yes. Both devices use identical TO-220-3 through-hole packaging with the same pin configuration and thermal interface. No PCB modifications are required. The gate drive voltage, operating temperature range, and mounting requirements are identical.

Q: What is the significance of the higher 650V rating on the NTP165N65S3H?

A: The NTP165N65S3H's 650V Vdss rating exceeds the FQP22N30's 300V specification. This higher rating does not prevent substitution in 300V applications; it provides additional voltage margin and transient protection. The device operates safely at voltages below its maximum rating.

Q: Is the 2A difference in continuous drain current (21A vs. 19A) significant?

A: The difference depends on the application's current requirements. If the circuit operates consistently at or near 21A, the NTP165N65S3H's 19A rating may require thermal design review. For applications operating below 19A, no impact occurs. Thermal dissipation and duty cycle must be evaluated for marginal cases.

Q: Are both parts RoHS compliant?

A: Yes. Both the FQP22N30 and NTP165N65S3H are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: What is the difference between the gate charge specifications?

A: The FQP22N30 has a gate charge of 60 nC at 10V, while the NTP165N65S3H has 35 nC at 10V. Lower gate charge reduces switching losses and allows faster switching speeds. The NTP165N65S3H's lower gate charge may improve efficiency in high-frequency switching applications.

Q: Can I use the NTP165N65S3H in new designs?

A: The NTP165N65S3H carries a Not For New Designs status from onsemi. For new designs, consult onsemi's current product portfolio for actively supported N-Channel MOSFETs in the 300V to 650V range with similar current ratings.

Q: Are there differences in on-state resistance between the two parts?

A: The Rds On values are comparable: FQP22N30 at 160 mOhm (10.5A, 10V) and NTP165N65S3H at 165 mOhm (9.5A, 10V). The difference of 5 mOhm is negligible for most applications and does not significantly impact power dissipation or thermal performance.