FQP19N20C_F080 Equivalent & Substitute Parts

Part Overview

The FQP19N20C_F080 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 19A continuous drain current at 25°C. This device is housed in a Through Hole TO-220-3 package and is designed for applications requiring moderate to high current switching at elevated voltages. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

FQP19N20C_F080

onsemiIn Stock: 1139FQP19N20C_F080 Datasheet

Current PartRFQ

IRF200B211

Infineon TechnologiesIn Stock: 7114IRF200B211 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FQP19N20C_F080 is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The primary substitution criteria are:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 200V
• Package Type: Must be Through Hole TO-220-3 or compatible variant
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must support the application's current requirements
• Rds On (Max): On-state resistance must be acceptable for thermal and efficiency constraints
• Operating Temperature Range: Must cover the application's thermal envelope
• Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry

The IRF200B211 from Infineon Technologies meets the critical matching parameters with identical Vdss (200V), N-Channel configuration, MOSFET technology, and Through Hole TO-220 package compatibility. However, the continuous drain current rating of 12A is lower than the FQP19N20C_F080's 19A rating, and maximum power dissipation is reduced to 80W compared to 139W.

Parameter Comparison

Engineering Selection Recommendations

The IRF200B211 is an active product from Infineon Technologies and is ROHS3 compliant, providing regulatory advantage over the obsolete FQP19N20C_F080. Both devices share identical Vdss ratings and N-Channel MOSFET architecture, establishing fundamental electrical compatibility.

Application Suitability:

The IRF200B211 is suitable for applications where the continuous drain current requirement does not exceed 12A and power dissipation remains within 80W. The device's extended maximum operating temperature of 175°C provides thermal margin beyond the FQP19N20C_F080's 150°C limit.

Limitations:

The IRF200B211 exhibits reduced continuous drain current (12A versus 19A) and lower maximum power dissipation (80W versus 139W). Applications requiring the full 19A current capacity or 139W power handling of the original part cannot be directly substituted without circuit redesign or parallel device configuration. The maximum gate voltage (Vgs Max) is reduced from ±30V to ±20V, requiring verification of gate drive circuit compatibility.

Compliance Status:

The IRF200B211 carries REACH Unaffected and ROHS3 Compliant certifications, supporting modern supply chain and environmental requirements. The FQP19N20C_F080, while REACH Unaffected, carries obsolete product status.

Frequently Asked Questions (FAQ)

Q: Can the IRF200B211 directly replace the FQP19N20C_F080 in all applications?

A: Direct replacement is limited to applications where continuous drain current does not exceed 12A and power dissipation remains within 80W. The reduced current and power ratings of the IRF200B211 make it unsuitable for designs requiring the full 19A or 139W specifications of the original part.

Q: Are the TO-220-3 and TO-220AB packages mechanically compatible?

A: Both packages are Through Hole TO-220 variants with identical pin spacing and mounting footprints. Mechanical and thermal interface compatibility is established. Pin assignment and electrical function alignment must be verified for the specific application.

Q: What is the impact of the reduced gate charge (23 nC versus 53 nC) on circuit performance?

A: The IRF200B211's lower gate charge reduces switching losses and allows faster switching transitions. This may improve efficiency in switching applications but requires verification that gate drive circuitry can accommodate the different charge characteristics.

Q: Does the lower maximum gate voltage (±20V versus ±30V) affect compatibility?

A: Applications using gate drive voltages exceeding ±20V are not compatible with the IRF200B211. Standard gate drive circuits operating at ±15V or lower are compatible with both devices.

Q: What is the significance of the different gate threshold voltage specifications (4V @ 250µA versus 4.9V @ 50µA)?

A: The threshold voltage specifications are measured at different drain currents, making direct comparison difficult. Both devices exhibit similar gate threshold behavior within typical operating ranges. Gate drive circuit design should accommodate the specified threshold voltage of the selected device.

Q: Is the IRF200B211 suitable for high-temperature applications?

A: The IRF200B211 supports operating temperatures up to 175°C, exceeding the FQP19N20C_F080's 150°C maximum. Applications requiring operation above 150°C benefit from the extended thermal range of the IRF200B211.