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FQP19N20C Equivalent & Substitute Parts
Part Overview
The FQP19N20C is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 19A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the QFET® series. The FQP19N20C is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the Through Hole TO-220-3 package format.
Substiute Parts
Key Parameters
| Parameter | FQP19N20C Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 19 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 170 | mOhm @ 9.5A, 10V |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53 | nC @ 10V |
| Power Dissipation (Max) | 139 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-220-3 | Through Hole |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) |
Substitute Part Grouping Explanation
Substitution of the FQP19N20C is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 200V
- Continuous Drain Current (Id) @ 25°C: Must equal or exceed 19A
- Package Type: Must be Through Hole TO-220-3 or compatible TO-220 variant
- FET Type: Must be N-Channel
- Technology: Must be MOSFET (Metal Oxide)
Secondary Compatibility Parameters:
- Rds On (Max) @ 10V: Lower or equal values indicate improved performance
- Gate Threshold Voltage: Must be within ±30V maximum gate voltage specification
- Operating Temperature Range: Must support -55°C to 150°C minimum
- RoHS3 Compliance: Required for regulatory alignment
The FQP19N20-T (onsemi) qualifies as the manufacturer-recommended substitute, meeting all primary criteria with enhanced specifications. The IRF200B211 (Infineon Technologies) and STP19NF20 (STMicroelectronics) are classified as similar alternatives, with trade-offs in current capacity and power dissipation relative to the original specification.
Parameter Comparison
| Parameter | FQP19N20C | FQP19N20-T | IRF200B211 | STP19NF20 | Unit |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | Infineon Technologies | STMicroelectronics | |
| Product Status | Obsolete | Active | Active | Active | |
| Drain to Source Voltage (Vdss) | 200 | 200 | 200 | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 19 | 19.4 | 12 | 15 | A (Tc) |
| Rds On (Max) @ 10V | 170 | 150 | 170 | 160 | mOhm |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 4 | 5 | 4.9 | 4 | V |
| Gate Charge (Qg) (Max) @ 10V | 53 | 40 | 23 | 24 | nC |
| Power Dissipation (Max) | 139 | 140 | 80 | 90 | W (Tc) |
| Operating Temperature Range | -55 to 150 | -55 to 150 | -55 to 175 | -55 to 150 | °C (TJ) |
| Package Type | TO-220-3 | TO-220-3 | TO-220AB | TO-220 | |
| RoHS3 Compliance | Yes | Yes | Yes | Yes | |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
FQP19N20-T (onsemi) – Manufacturer-Recommended Substitute
The FQP19N20-T is the primary substitute for the obsolete FQP19N20C. This part maintains identical voltage and current specifications while offering improved on-resistance (150 mOhm vs. 170 mOhm) and reduced gate charge (40 nC vs. 53 nC). The FQP19N20-T is classified as Active product status, ensuring long-term availability and supply chain continuity. Both parts share the same QFET® series designation, TO-220-3 package format, and operating temperature range (-55°C to 150°C). RoHS3 compliance and REACH Unaffected status are maintained. This substitute provides direct functional replacement with performance enhancements.
IRF200B211 (Infineon Technologies) – Similar Alternative
The IRF200B211 is an active product offering 200V voltage rating and 12A continuous drain current. This part is suitable for applications where current requirements do not exceed 12A. The IRF200B211 features lower gate charge (23 nC) and reduced power dissipation (80W) compared to the FQP19N20C, making it appropriate for lower-power circuit implementations. The package is TO-220AB, which is mechanically compatible with TO-220-3 applications. Operating temperature range extends to 175°C, providing enhanced thermal margin. RoHS3 compliance is confirmed. This substitute is applicable only when design current requirements are 12A or lower.
STP19NF20 (STMicroelectronics) – Similar Alternative
The STP19NF20 is an active product rated for 200V and 15A continuous drain current. This part bridges the current capacity gap between the IRF200B211 and the original FQP19N20C specification. The STP19NF20 features on-resistance of 160 mOhm and gate charge of 24 nC, both favorable compared to the FQP19N20C. Power dissipation is rated at 90W. The package is TO-220, which is mechanically compatible with TO-220-3 applications. Operating temperature range matches the original specification at -55°C to 150°C. RoHS3 compliance is confirmed. This substitute is applicable for applications requiring 15A continuous current capacity.
Frequently Asked Questions (FAQ)
Q: Why is the FQP19N20C classified as obsolete?
A: The FQP19N20C has reached end-of-life status in the manufacturer's product portfolio. The FQP19N20-T has superseded this part with improved electrical characteristics and active production status.
Q: Can the FQP19N20-T be used as a direct replacement for the FQP19N20C?
A: Yes. The FQP19N20-T maintains identical voltage rating (200V), equivalent current rating (19.4A vs. 19A), and identical package format (TO-220-3). The substitute offers improved on-resistance and reduced gate charge, making it functionally superior for direct substitution.
Q: What are the key differences between the FQP19N20-T and IRF200B211?
A: The primary difference is continuous drain current: FQP19N20-T is rated for 19.4A while IRF200B211 is rated for 12A. The IRF200B211 features lower gate charge (23 nC vs. 40 nC) and lower power dissipation (80W vs. 140W). The IRF200B211 is suitable only for applications requiring 12A or less.
Q: Are all substitute parts compatible with the original TO-220-3 package footprint?
A: The FQP19N20-T uses TO-220-3 package, providing identical footprint compatibility. The IRF200B211 uses TO-220AB and the STP19NF20 uses TO-220 package format. Both TO-220AB and TO-220 are mechanically compatible with TO-220-3 applications, though pin configuration should be verified for specific circuit layouts.
Q: What is the significance of gate charge (Qg) differences between these parts?
A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (FQP19N20-T at 40 nC, IRF200B211 at 23 nC) requires less driver current and enables faster switching compared to the original FQP19N20C at 53 nC. Driver circuit compatibility must be confirmed for each substitute.
Q: Do all substitute parts meet RoHS3 compliance?
A: Yes. The FQP19N20-T, IRF200B211, and STP19NF20 are all RoHS3 compliant and REACH Unaffected, matching the regulatory status of the original FQP19N20C.
Q: Which substitute should be selected for a new design?
A: For new designs requiring 19A continuous current capacity, the FQP19N20-T is the recommended choice, offering manufacturer continuity and performance improvements. For applications with lower current requirements (12A or less), the IRF200B211 provides enhanced switching characteristics. For intermediate current requirements (15A), the STP19NF20 is appropriate.
Q: What is the maximum gate voltage specification for these parts?
A: The FQP19N20C and FQP19N20-T support ±30V maximum gate voltage. The IRF200B211 and STP19NF20 support ±20V maximum gate voltage. Driver circuits must be designed within these limits for each selected substitute.
Q: Are there thermal considerations when substituting these parts?
A: The FQP19N20-T maintains identical power dissipation (140W) and operating temperature range (-55°C to 150°C) as the original. The IRF200B211 has lower power dissipation (80W) and extended temperature range to 175°C. The STP19NF20 has lower power dissipation (90W) and standard temperature range (-55°C to 150°C). Thermal design should account for these differences in power dissipation ratings.
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