FQP19N20 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FQP19N20 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 19.4A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is designed for general-purpose switching and amplification applications. The FQP19N20 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance, and thermal characteristics while accommodating the through-hole TO-220 package family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	19.4	A
On-Resistance (Rds On) @ 9.7A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	40	nC
Power Dissipation (Max)	140	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the FQP19N20 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 19.4A at 25°C
On-Resistance (Rds On): Must not exceed 150mOhm at specified gate voltage and current
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Package Type: Must be TO-220 family (TO-220-3, TO-220AB, or TO-220)
Mounting Type: Must be through-hole

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching
Power Dissipation: Higher ratings provide thermal margin
Operating Temperature Range: Must support -55°C to 150°C minimum

Substitute parts are grouped into two categories: parametric equivalents (identical or superior electrical specifications) and similar alternatives (comparable performance with minor trade-offs in specific parameters).

Parameter Comparison

Parameter	FQP19N20	FQP19N20-T	IRF640NPBF	IRF640PBF	PJP18N20_T0_00001	STP19NF20	STP20NF20
Manufacturer	onsemi	onsemi	Infineon	Vishay Siliconix	Panjit	STMicroelectronics	STMicroelectronics
Vdss (V)	200	200	200	200	200	200	200
Id @ 25°C (A)	19.4	19.4	18	18	18	15	18
Rds On @ 10V (mOhm)	150 @ 9.7A	150 @ 9.7A	150 @ 11A	180 @ 11A	160 @ 9A	160 @ 7.5A	125 @ 10A
Vgs(th) @ 250µA (V)	5	5	4	4	3	4	4
Qg @ 10V (nC)	40	40	67	70	24	24	39
Power Dissipation (W)	140	140	150	125	89	90	110
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package	TO-220-3	TO-220-3	TO-220AB	TO-220AB	TO-220AB	TO-220	TO-220
Product Status	Obsolete	Active	Not For New Designs	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Preferred Substitute: FQP19N20-T

The FQP19N20-T is the primary recommended substitute. Manufactured by onsemi, it maintains identical electrical specifications to the FQP19N20 across all critical parameters: 200V Vdss, 19.4A continuous drain current, 150mOhm on-resistance, and 140W power dissipation. The FQP19N20-T is classified as Active product status, ensuring long-term availability and supply chain continuity. Both devices share the same QFET® series designation and TO-220-3 package configuration, enabling direct pin-compatible replacement without circuit modification. RoHS3 compliance and REACH unaffected status match the original part.

Secondary Substitute: STP20NF20

The STP20NF20 manufactured by STMicroelectronics provides superior electrical performance in critical areas. It maintains 200V Vdss and 18A continuous drain current, with improved on-resistance of 125mOhm at 10A (compared to 150mOhm in the FQP19N20). Gate charge is 39nC, closely matching the original 40nC specification. Power dissipation is 110W, lower than the original 140W but adequate for most applications. Operating temperature range extends to 175°C, providing enhanced thermal margin. The STP20NF20 is Active product status with RoHS3 compliance. TO-220 package is mechanically compatible with TO-220-3 footprints.

Alternative Substitute: IRF640NPBF

The IRF640NPBF manufactured by Infineon Technologies meets the 200V voltage requirement with 18A continuous drain current. On-resistance is 150mOhm at 11A, matching the FQP19N20 specification. Power dissipation is 150W, exceeding the original 140W rating. Operating temperature range extends to 175°C. However, this device is classified as Not For New Designs, limiting its suitability for long-term applications. Gate charge is 67nC, significantly higher than the original 40nC, resulting in slower switching characteristics. TO-220AB package is mechanically compatible.

Alternative Substitute: IRF640PBF

The IRF640PBF manufactured by Vishay Siliconix maintains 200V Vdss and 18A continuous drain current. On-resistance is 180mOhm at 11A, exceeding the FQP19N20 specification of 150mOhm, resulting in higher conduction losses. Power dissipation is 125W, below the original 140W rating. This device is Active product status with RoHS3 compliance but carries REACH Affected designation. Gate charge is 70nC, higher than the original specification. TO-220AB package is mechanically compatible.

Lower-Performance Alternative: PJP18N20_T0_00001

The PJP18N20_T0_00001 manufactured by Panjit International Inc. meets the 200V voltage requirement with 18A continuous drain current. On-resistance is 160mOhm at 9A, slightly higher than the FQP19N20. Power dissipation is 89W, significantly lower than the original 140W, limiting thermal headroom. Gate charge is 24nC, lower than the original 40nC, enabling faster switching. This device is Active product status with RoHS3 compliance. TO-220AB package is mechanically compatible. Suitable for applications with reduced power dissipation requirements.

Lower-Performance Alternative: STP19NF20

The STP19NF20 manufactured by STMicroelectronics is rated for 200V Vdss but with reduced continuous drain current of 15A, below the FQP19N20 specification of 19.4A. On-resistance is 160mOhm at 7.5A. Power dissipation is 90W, significantly lower than the original 140W. Gate charge is 24nC, lower than the original specification. This device is Active product status with RoHS3 compliance. TO-220 package is mechanically compatible. Suitable only for applications with current requirements below 15A.

Frequently Asked Questions (FAQ)

Q: Can the FQP19N20-T be used as a direct replacement for the FQP19N20?

A: Yes. The FQP19N20-T is a direct pin-compatible substitute with identical electrical specifications across all critical parameters. Both devices use the TO-220-3 package and share the same QFET® series designation. No circuit modifications are required.

Q: What is the primary reason the FQP19N20 is obsolete?

A: The FQP19N20 is classified as obsolete by onsemi. The FQP19N20-T, which maintains identical specifications, is the recommended replacement for new designs and ongoing production.

Q: Can I use the STP20NF20 instead of the FQP19N20 in my application?

A: The STP20NF20 is electrically compatible with the FQP19N20 for most applications. It maintains the 200V voltage rating and provides 18A continuous drain current (compared to 19.4A in the original). On-resistance is improved at 125mOhm. However, verify that your application does not require the full 19.4A current specification. The TO-220 package is mechanically compatible with TO-220-3 footprints.

Q: Why does the IRF640NPBF have higher gate charge than the FQP19N20?

A: The IRF640NPBF has gate charge of 67nC compared to 40nC in the FQP19N20. This results in slower gate charging and switching characteristics. The IRF640NPBF is also classified as Not For New Designs, making it unsuitable for new applications despite electrical compatibility.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are through-hole TO-220 family packages with identical pin configurations and mechanical footprints. TO-220-3 and TO-220AB are interchangeable for PCB mounting purposes. The designation difference reflects manufacturer nomenclature variations.

Q: Is the PJP18N20_T0_00001 suitable for high-power applications?

A: The PJP18N20_T0_00001 has power dissipation of 89W, significantly lower than the FQP19N20 at 140W. It is suitable for applications with moderate power dissipation requirements. For applications requiring the full 140W thermal capacity, use the FQP19N20-T or STP20NF20.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All substitute parts listed are RoHS3 compliant. The FQP19N20-T, STP19NF20, and STP20NF20 are REACH Unaffected. The IRF640PBF is REACH Affected. Verify REACH compliance requirements for your specific application and region.

Q: Can I use the STP19NF20 if my application requires 19.4A continuous current?

A: No. The STP19NF20 is rated for 15A continuous drain current, below the FQP19N20 specification of 19.4A. Using this device in applications requiring higher current will result in thermal stress and potential device failure. Use the FQP19N20-T or STP20NF20 for applications requiring 18A or higher current.

Q: What is the operating temperature advantage of the STP20NF20?

A: The STP20NF20 operates from -55°C to 175°C, compared to -55°C to 150°C for the FQP19N20. This 25°C extended upper temperature range provides additional thermal margin in high-temperature environments.

Q: Are there any compliance differences between substitute parts?

A: All substitute parts are RoHS3 compliant. The IRF640PBF carries REACH Affected status, while the FQP19N20-T, STP19NF20, and STP20NF20 are REACH Unaffected. Verify REACH compliance requirements for your application jurisdiction before final part selection.

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